33N 100 Search Results
33N 100 Price and Stock
SiTime Corporation SIT8924BAB81-33N-100.000000OSC MEMS 100.0000MHZ SMD |
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SIT8924BAB81-33N-100.000000 | 13 | 1 |
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CTS Corporation 533N10020CTTXTAL OSC TCXO 10.0000MHZ HCMOS |
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533N10020CTT | Reel | 1,000 |
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CTS Corporation 533N10025ITT5.0mm x 3.2mm Surface Mount HCMO |
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533N10025ITT | Reel | 1,000 |
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Vishay Sfernice RMK33N100KF100KBSFERNICE THIN FILMS |
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RMK33N100KF100KB | Tray | 100 |
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Renesas Electronics Corporation R5F72433N100FP-U0SH72433 FL 128K/8K 100MHZ LQFP14 |
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R5F72433N100FP-U0 | Tray | 90 |
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33N 100 Datasheets Context Search
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Contextual Info: RMK 33N www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C • Wirebondable |
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2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: RMK 33N www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C • Wirebondable |
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2002/95/EC 11-Mar-11 | |
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Contextual Info: AEC-Q200 Updated: February 7, 2014 Validity: Q1-CY2014 X7R + FLEXITERM - AECQ-200 0603 to 0805 Mass Production 2014 2015 Capacitance Value / Capacitance Code Case Size Voltage 1n 1n5 2n2 3n3 4n7 6n8 10n 15n 22n 33n 47n 68n 100n 102 152 222 332 472 682 103 |
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AEC-Q200 Q1-CY2014 AECQ-200 Q3-15 Q4-14 Q2-15 100pF 200pF | |
47n J 1000VContextual Info: Standard Grade Validity: Q1-CY2014 X5R – roadmap 0101 to 0603 Case Size 0101 = EIA 01005 0201 Voltage Mass Production 2014 2015 Capacitance Value / Capacitance Code 100 150 220 330 470 680 1n 1n5 2n2 3n3 4n7 6n8 10n 15n 22n 33n 47n 68n 100n 220n 470n 1u |
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Q1-CY2014 Q2-14 Q1-15 Q3-14 Q2-15 47n J 1000V | |
C1608CB
Abstract: C2520F C2520C marking code diode R12 R47 marking C2012C-33N C2012c 33n 100 marking code 33n C1005C-33N
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sC2012C 1000MHz 1000nH C2012C-33N C2012C-8R2 C1608CB-22N C1608CB-3R9 C1005C-6R8 C1005C-33N 1005C C1608CB C2520F C2520C marking code diode R12 R47 marking C2012C-33N C2012c 33n 100 marking code 33n C1005C-33N | |
kers
Abstract: 000000M hitachi metals Hitachi DSA002698 HS-SHS-080FL-9905A
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SHS-080FL HS-SHS-080FL-9905A 824-849MHz 869-894MHz kers 000000M hitachi metals Hitachi DSA002698 HS-SHS-080FL-9905A | |
RMK 33NContextual Info: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at 70 °C Actual Size The demand for high precision, high stability microchips for |
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08-Apr-05 RMK 33N | |
SR32-33NContextual Info: 32 & 33 Channels SAW Resonator SCOPE This specification shall cover the characteristics of SR32-33N SR Series of SAW Resonator which applies to the US channel RF modulator. Absolute Maximum Rating Ta=25°C Parameter DC Voltage VDC Rating Both 32 and 33 Channel |
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SR32-33N 10Vpp 45KHz JIS-K-501) JIS-K-5902) SR32-33N | |
hitachi metals
Abstract: Hitachi DSA002698
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SHS-090LL HS-SHS-090LL-9802A 880-915MHz 925-960MHz HS-SHS-090LL-9811A 30PRm hitachi metals Hitachi DSA002698 | |
SHS-090FL
Abstract: 960mhz
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OCR Scan |
SHS-090FL 915MHz 960MHz 55dBTyp. 65dBTyp. 36dBm HS-SHS-090FL-9709A SHS-090FL | |
10p51
Abstract: Hitachi DSA002698
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SHS-160FL 1661MHz 1559MHz 36dBm 28ent HS-SHS-160FL-9704A 10p51 Hitachi DSA002698 | |
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Contextual Info: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision Very low temperature coefficient < 10 ppm/°C Excellent stability 0.03 % 2000 h, rated power, at + 70 °C Actual Size Wirebondable The demand for high precision, high stability microchips for |
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2002/95/EC 11-Mar-11 | |
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Contextual Info: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision Very low temperature coefficient < 10 ppm/°C Excellent stability 0.03 % 2000 h, rated power, at + 70 °C Actual Size Wirebondable The demand for high precision, high stability microchips for |
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2002/95/EC 18-Jul-08 | |
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Contextual Info: RSK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • • • • • • • Actual Size The Vishay RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized silicon substrate and incorporate two resistors of equal |
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RSK33 18-Jul-08 | |
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Contextual Info: RSK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Actual Size The Vishay RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized silicon substrate and incorporate two resistors of equal |
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2002/95/EC RSK33 18-Jul-08 | |
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Contextual Info: RMK 33N www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C • Aluminum or gold pads |
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2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
RMK 33NContextual Info: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at 70 °C Actual Size The demand for high precision, high stability microchips for |
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08-Apr-05 RMK 33N | |
B8XC0114-33N
Abstract: CGSD8X331M-T21 B9HC0118-33N CGSD4X B5RC0127-65N B9HC0115-33N CGSD8X101M-T21 B8XC0114 marking code 33n B5RC0128-33N
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B5RC0129-33N B5RC0128-33N B5RC0122-33N B5RC0123-33N B5RC0135-33N B5RC0124-33N B5RC0125-33N B5RC0126-33N B5RC0127-65N CGSD8X222M-T21 B8XC0114-33N CGSD8X331M-T21 B9HC0118-33N CGSD4X B5RC0127-65N B9HC0115-33N CGSD8X101M-T21 B8XC0114 marking code 33n B5RC0128-33N | |
B8XC0114-33N
Abstract: CGSD8X101M-T21 33N capacitor CGSD8X102M-T21 B7ZC0711-65N B9HC0115-33N transistor y5p B9HC0118-33N B5RC0127-65N b8xc0114
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B5RC0129-33N B5RC0128-33N B5RC0122-33N B5RC0123-33N B5RC0135-33N B5RC0124-33N B5RC0125-33N B5RC0126-33N B5RC0127-65N CGSD8X222M-T21 B8XC0114-33N CGSD8X101M-T21 33N capacitor CGSD8X102M-T21 B7ZC0711-65N B9HC0115-33N transistor y5p B9HC0118-33N B5RC0127-65N b8xc0114 | |
RSK 33NContextual Info: RSK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Economic Cost • Low TCR < 25 ppm/°C RoHS • Rapid Rise Time Actual Size COMPLIANT • Low Noise < 35 dB The VISHAY RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized |
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RSK33 18-Jul-08 RSK 33N | |
RSK33
Abstract: Sfernice 0.01% RSK-33 RSK 33N
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RSK33 08-Apr-05 Sfernice 0.01% RSK-33 RSK 33N | |
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Contextual Info: RMK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • High precision • Very low temperature coefficient < 10 ppm/°C • Excellent stability 0.03 % 2000 h, rated power, at + 70 °C Actual Size • Wirebondable The demand for high precision, high stability microchips for |
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18-Jul-08 | |
RSK 33NContextual Info: RSK 33N Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Economic Cost • Low TCR < 25 ppm/°C RoHS • Rapid Rise Time Actual Size COMPLIANT • Low Noise < 35 dB The VISHAY RSK33 resistive dividers are based on a nickel-chromium thin metal film formulation on an oxidized |
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RSK33 08-Apr-05 RSK 33N | |
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Contextual Info: RSK 33N www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • Low TCR < 25 ppm/°C • Rapid Rise Time • Low Noise < - 35 dB Actual Size • High temperature version up to 230 °C see RMKHT The Vishay RSK33 resistive dividers are based on a |
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RSK33 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |