33A MARKING Search Results

Contextual Info: Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of

Contextual Info: DATASHEET Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of

Contextual Info: Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of

Contextual Info: 48Vdc Input, 12Vdc@33A Output Quarter-brick Converter AVQ400-48S12B Description The AVQ400-48S12B is a single output DC/DC converter with standard quarter-brick outline and pin configuration. It delivers up to 33A output current with 12V output voltage. Above

Contextual Info: RCX330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: MCOTS-C-270-06-HT Single Output Half-brick MILITARY COTS DC-DC CONVERTER 155-425V Continuous Input 155-475V Transient Input 6V Output 33A Output 88% @ 16.5A / 87% @ 33A Efficiency Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC-DC converters brings

Contextual Info: 48Vdc Input, 12Vdc@33A Output Quarter-brick Converter AVQ400-48S12-6L Description The AVQ400-48S12-6L is a single output DC-DC converter with standard quarter-brick outline and pin configuration. It delivers up to 33A output current with 12V output voltage.

rcj330

Contextual Info: RCJ330N25 Nch 250V 33A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: Data Sheet October 17, 2005 QBK033A0B Series Power Modules; DC-DC Converters 36-60 Vdc Input; 12Vdc Output; 33A Output Current Features ƒ High efficiency – 94.5% at 12V full load ƒ Delivers up to 33A output current ƒ Low output ripple and noise ƒ Industry standard Quarter brick:

RCJ330N25

Abstract: rcj330
Contextual Info: RCJ330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

FDPF 33N25T

Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

200V 200A mosfet

Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
Contextual Info: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

Contextual Info: PD - 95330A SMPS IGBT IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

marking 33a on semiconductor

Abstract: 502BCOHM KEVIN
Contextual Info: SPECIFICATION FOR APPROVAL RoHS COMPLI ANT * CUSTOMER.: DESCRIPTION.: Inductor, 0.15uH, 33A, 0.28 mΩ DCR PAGE.: 1 of 4 AH2520-R15LU DATE.: 2009.04.07 ITG PART No.: 1.CONFIGURATIONS & DIMENSIONS: D B Marking F A E G C 3.5 4.0 3.0 YYWW A B C D E F G H I 6.80

IRGP50B60PD1PbF

Abstract: 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 diode marking 33A on
Contextual Info: SMPS IGBT PD - 95330 IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

30ETH06

Abstract: IRFP250 irfp250 applications ICE-50 IRGP50B60PD1PBF
Contextual Info: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

50B60PD1

Abstract: P50B60 p50b60pd1
Contextual Info: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters

MICROSEMI 6804

Contextual Info: 15KPA17e3 to 15KPA280CAe3 15000W Transient Voltage Suppressor TVS protection device Main product characteristics VWM 17V – 280V VBR(min) 19V – 312V IPP 515A – 33A VCL(MAX) 29.3V – 454.5V PPP 15000W RoHS COMPLIANT HALOGEN FREE P600 Description and applications

50b60pd

Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

diode marking 33a on semiconductor

Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

diode marking 33a on semiconductor

Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRGP50B60PD1

Abstract: irfp250 DRIVER smps igbt transistor IRF 630 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD
Contextual Info: PD - 94625B IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

IRF540N

Abstract: mosfet irf540n
Contextual Info: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier