335UM Search Results
335UM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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STMICRO top-side marking
Abstract: marking code nt amplifier Utah speaker TS4851 TS4851EIJT TS4851IJT TS485IJT TSDC02IJT STmicro marking
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TS4851 160mW 20kHz 32-step 100nA) TS485IJT TS485Ermation STMICRO top-side marking marking code nt amplifier Utah speaker TS4851 TS4851EIJT TS4851IJT TSDC02IJT STmicro marking | |
ED-714IRPContextual Info: ED-714IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um |
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ED-714IRP 105um 320um 180um 335um x335um ED-714IRP | |
ed-914irpContextual Info: ED-914IRP AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um |
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ED-914IRP 105um 320um 180um 335um 335um 100mA ed-914irp | |
STMICRO top-side markingContextual Info: TS4851 Mono 1W Speaker and Stereo 160mW Headset BTL Drivers with Digital Volume Control • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Operating from VCC = 3V to 5.5V Rail to rail input/output Speaker driver with 1 W output @ Vcc = 5V, THD+N = 1%, F = 1kHz, 8Ω load |
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TS4851 160mW 20kHz 32-step 100nA) TS485IJT TS485EIJT STMICRO top-side marking | |
Contextual Info: ED-714IR AlGaAs/AlGaAs Highspeed IrED Chips 870 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • Highspeed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um |
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ED-714IR 105um 320um 180um 335um 335um | |
ED-214IRContextual Info: ED-214IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 335 320 n-Electrode n-AlGaAs epi layer n-Electrode 255 115 335 p-AlGaAs epi layer Emission area p-Electrode |
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ED-214IR 115um 320um 255um 335um 335um ED-214IR | |
ED-714IRVContextual Info: ED-714IRV AlGaAs/AlGaAs Highspeed IrED Chip 880 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um |
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ED-714IRV 105um 320um 180um 335um x335um ED-714IRV | |
ED-014IRC
Abstract: GaAs wafer
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Original |
ED-014IRC 105um 320um 280um 335um x335um ED-014IRC GaAs wafer | |
ED-814IRContextual Info: ED-814IR AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • N side up • High power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um |
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ED-814IR 120um 320um 180um 335umx 335um 02OPTOELECTRONIC ED-814IR | |
Contextual Info: ED-914IR AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um |
Original |
ED-914IR 105um 320um 180um 335um x335um |