3310 DIODE Search Results

Hdsl-3600

Abstract: smd transistor 3310 33171 HSDL-3310 3310 DIODE 3310 DIODE DATASHEET 3310
Contextual Info: Agilent HSDL-3310 IrDA Data Compliant 1.152 Mb/s Infrared Transceiver Data Sheet Functional Description The HSDL-3310 is a small form factor infrared IR transceiver module that provides interface between logic and IR signals for through-air, serial, half-duplex IR

CEM3310

Abstract: ltks 3310 Curtis kt 205 attack 3310 DIODE
Contextual Info: OSS CEM 3310 CURTIS €L6CTROmUSIC 5P€CIALTI€5 Voltage Controlled Envelope Generator The CEM 3310 is a self-contained, precision ADSR type o f envel­ ope generator intended fo r elec­ tro n ic music and o th e r sound generation applications. A tta c k ,

Contextual Info: 3310 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)3 @Temp. (øC) (Test Condition)25

ZVN3310

Abstract: ZVN3310A ZVN3310B ZVN3310F F159
Contextual Info: büE D • T ti?GS7a QODVÔST 3DÔ ■ ZETB — ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN 3310 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance

1N3307

Abstract: 1N3327 1N3327BR IR 94 1N3328 1N3326 1N3311 1N3315 1N3320 1n3321
Contextual Info: zener diodes diodes zener Types VZT/'ZT min 50 W / 1N 3305 B 1N 3306 B 1N 3307 B 1N 3308 B 1N 3309 B 1N 3310 B 1N3311 B 1N 3312 B 1N 3314 B 1N3315 B 1N 3317 B 1N 3319 B 1N 3320 B 1N 3321 B 1N 3323 B 1N 3324 B 1N 3325 B 1N 3326 B 1N 3327 B 1N 3328 B 1N 3330 B

CEM3310

Abstract: jfet s00 jfet transistor for VCR
Contextual Info: 25E D • bTIOMS? QQOQ251 S ■ ON CHIP S Y S T EM S CEM 3310 " T - S D - O 0! CURTIS € U C T R 0 fflU 5 tC S P « W fft€ 3 110 H ig h la n d Ave. L o s G atos Ca. 9S030, U S A Tel. 408 395-3350 Voltage Controlled Envelope Generator The C E M 3 3 10 Is a self-contained,

IR3310

Abstract: SMD-220 IR3310S Q100 SMD220
Contextual Info: Data Sheet No.PD60181 Rev.E IR3310 S PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown

MC1648 spice model

Abstract: KEL1648 K1648 varactor diode q factor measurement MC100EL1648 application note capacitor 1.3 mF symbol of varactor diode and equivalent circuit
Contextual Info: MC100EL1648 5 V ECL Voltage Controlled Oscillator Amplifier The MC100EL1648 is a voltage controlled oscillator amplifier that requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank

Contextual Info: ADVANCE INFORMATION Data Sheet No.PD60181 IR3310 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Reverse battery protection reverse current operation

PZ56A

Abstract: IN3324 IN3335 IN3308B PZ10B PZ10BR diodes de regulation de tension 1N3307 PZ82A PZ47A
Contextual Info: 24 DIODES DE RÉGULATION DE TENSION zener diodes Ps TYPES 10 W 10 ms 'Z M W (mA) tcase = 75°C / *V ZT (V) nom min t(vj) = 150°C max 'Z T rZT max 'Z K (mA) (Î2) (mA) cathode au boitier type + suffixe R : anode au boitier rZ K max (fi) <*t (10-“ /oC)

0257020

Abstract: 0257001 Littelfuse 311 0257002 0257030.U
Contextual Info: Blade Fuses ATO Blade Fuse Rated 32V Specifications 32 VDC 1000A @ 32 VDC -40˚C to +105˚C Blade Fuses Voltage Rating: Interrupting Ratings: Operating Temperature Range: Developed by Littelfuse for the automotive industry, the ATO fuse has become the original equipment circuit protection

D452

Abstract: ST173S D454 equivalent D456 TO93 D458
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-450 To Order Previous Datasheet Index Next Data Sheet Bulletin I25181/B ST173S SERIES Stud Version INVERTER GRADE THYRISTORS Features 175A All diffused design Center amplifying gate

Contextual Info: /= T ^ 7/ S C S -T H O M S O N 5 T D A 8 1 7 8 FS TV VERTICAL DEFLECTION BOOSTER • ■ ■ ■ POWER AMPLIFIER FLYBACK SUPPLY VOLTAGE SEPARATED THERMAL PROTECTION REFERENCE VOLTAGE DESCRIPTION Designed for monitors and high performance TVs, the TDA8178FS vertical deflection booster is able

7490 truth table

Abstract: logic diagram 7490 128-CHANNEL HV583
Contextual Info: Supertex inc. HV583 128-Channel Serial to Parallel Converter with Push-Pull Outputs General Description Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► Processed with HVCMOS technology 128 Channels 4 Separate shift registers

7490 truth table

Contextual Info: Supertex inc. HV583 128-Channel Serial to Parallel Converter with Push-Pull Outputs General Description Features ►► Processed with HVCMOS technology ►► 128 Channels ►► 4 Separate shift registers ►► 5V CMOS logic ►► Output voltages up to 80V

7490 pin diagram

Abstract: logic diagram 7490 1990 1142 pin diagram of 7490 v 4520 D124 D125 D126 D127 HV583
Contextual Info: Supertex inc. HV583 128-Channel Serial to Parallel Converter with Push-Pull Outputs General Description Features ► ► ► ► ► ► ► ► ► ► ► Processed with HVCMOS technology 128 Channels 4 Separate shift registers 5V CMOS logic Output voltages up to 80V

D3A DIODE

Abstract: diode D3B
Contextual Info: Supertex inc. HV583 128-Channel Serial to Parallel Converter with Push-Pull Outputs General Description Features Processed with HVCMOS technology 128 Channels 4 Separate shift registers 5V CMOS logic Output voltages up to 80V ±30mA output current capability

GI88LS02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GI88LS02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 75A Description The GI88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

D2450N

Abstract: D2450 154E
Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D2450N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Periodische Spitzensperrspannung Kenndaten repetitive peak reverse voltages Tvj = -40°C. Tvj max

Contextual Info: SMPS MOSFET PD - 95472A IRFB18N50KPbF Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.26Ω 17A

GU88LS02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88LS02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 75A Description The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

GE88LS02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88LS02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 75A Description The GE88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

GJ88LS02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88LS02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 75A Description The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

Contextual Info: SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 420 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMITRANS 4 ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A Tc = 80 °C