330 MARKING DIODE Search Results

MARKING SY SOT23

Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

zener VZ 1.2 v

Abstract: List of Zener diode z1001 zener diode 15 v Zener Diode frequency zener diode sz MAZX000 MAZX200 list zener MAZX240
Contextual Info: Zener Diodes MAZX000 Series Silicon planar type Unit : mm For stabilization of power supply 4.4 ± 0.3 • Features + 0.1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 2.15 ± 0.3 2 1.4 ± 0.2 2.5 ± 0.3 • Large power dissipation: PD = 1.0 W • High zener voltage VZ: 200 V to 330 V

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

SOD223

Abstract: SOD-223
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low

ESD113-B1-02ELS

Abstract: MIPI firewire
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD113-B1-02ELS Bi-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD113-B1-02ELS Data Sheet Revision 1.1, 2013-02-06 Final Power Management & Multimarket Edition 2013-02-06 Published by Infineon Technologies AG

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.2, 2013-12-19 Final Power Management & Multimarket ESD206-B1-02V Revision History: Rev. 1.1, 2013-11-26

keyboard and touchpad schematic

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.0, 2013-04-12 Final Power Management & Multimarket Edition 2013-04-12 Published by Infineon Technologies AG

ZB36 zener

Abstract: ZB27 zb36 zb24 ZB30 zb43 ZB22 BL sma zener U1ZB11 U1ZB12
Contextual Info: BL GALAXY ELECTRICAL ZENER DIODES U1ZB6.8 - - - U1ZB390 POWER DISSIPATION: 1.0 W FEATURES DO-214AC SMA Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage

LRB751S-40T1

Abstract: SC-75 SOD3232
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751S-40T1 Features 1 Small surface mounting type SC-76/SOd323 (2)Low reverse current and low forward voltage. (3)High reliability Construction silicon epitaxial planar SC-79/SOD-523 Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1G High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 3) Pb-Free Package is Available. z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323

Contextual Info: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode LRB500V-40T1G zApplications Low current rectification 1 zFeatures 1 Small surface mounting type. 2) Low IR. IR=70nA Typ.) 3) High reliability. 4) Pb-Free package is available. 2 SOD-323 zConstruction

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

SOT 363 marking CODE 039

Abstract: LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB520S-30T1 zApplications Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 Low IR.(IR=0.1mA Typ.) High reliability. 2 Pb-Free package is available.

10W ZENER DIODES

Abstract: zener 501 ma2z220
Contextual Info: MA111 Zener Diodes MA2Z000 Series Silicon planer type Unit : mm For stabilization of power supply 4.4±0.3 High Zener voltage VZ : 200 to 330V ● Automatic mounting possible 2 1 +0.1 1.2±0.4 Rating Unit 500 mA Ptot * 1 1.0 W Non-repetitive reverse surge power dissipation

BAV119

Abstract: smd part marking b1 sot SMD DIODE MARKING A1 SOD123 diode smd 410 SMD diode MARKING P2 Marking 52 sot 163 SMD DIODE DEVICE marking R TYPE SOD-123 MARKING DIAGRAM SOD-123 smd marking 5K ap02007
Contextual Info: BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE NEW PRODUCT Features • · Ultra-Small Surface Mount Package Very Low Leakage Current UNDER DEVELOPMENT B Mechanical Data · · · · · · Case: SOT-523, Molded Plastic Terminals: Solderable per MIL-STD-202,

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)