33-20 DIODE Search Results

KDZ10EV

Abstract: KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Contextual Info: Surface Mount Zener Diodes 100mW 150mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 200mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 Marking Code Part No. BZX384-C2V4 BZX384-C2V7 BZX384-C3V0

Schottky diode TO220

Contextual Info: DGS 20-018A S DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 20-018A DGS 20-018A A Single C TO-220 AC C A A DGS 20-018AS DGS 20-018AS

to-220 weight

Contextual Info: DGS 20-018A S DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 20-018A DGS 20-018A A Single C TO-220 AC C A A DGS 20-018AS DGS 20-018AS

20015A

Contextual Info: DGS 20-015A DGS 20-018A DGSK 40-015A DGSK 40-018A IFAV = 23 A VRRM = 150/180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V Type 150 180 150 180 DGS 20-015A DGS 20-018A VRSM VRRM Type V V 150 180 150 180 A C TO-220 AC

SD5000N

Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
Contextual Info: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.

c3320

Abstract: l33a sth33n20fi UPS smk CIRCUIT STH33N20 STW33N20
Contextual Info: 2 < a O , ln é SGSTHOMSON E STH33N20/FI STW33N20 !ül gT[E M(gI i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE S TH33N20 STH33N20FI STW 33N20 V dss R D S (o n Id 200 V 200 V 200 V < 0.085 n < 0.085 n < 0.085 n 33 A 20 A 33 A . TYPICAL RDS(on) = 0.073 Q

rohm CRB25 series

Abstract: CRB25 samsung ltcc KOA RK73 samsung SMD resistors SMD resistors 0805 koa SMD resistors 1206 samsung crcw resistors dale KOA RK73B sei smd 1206 resistors
Contextual Info: PMS 378 neg. PMS 540 neg. RESISTORS KOA SPEER ELECTRONICS, INC. 5% STANDARD E-24 E-12 Decade Values 10 33 12 39 15 47 18 56 22 68 27 82 10 22 47 11 24 51 12 27 56 13 30 62 15 33 68 16 36 75 . . . your partner in advancing technology • 18 39 82 20 43 91

Contextual Info: DGS 20-018AS IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V 180 180 Type A C TO-263 AB A DGS 20-018AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFAV IFAV

Contextual Info: POWER GENERATION DIODES Selection guide POWER GENERATION DIODES Selection Guide STEP RECOVERY DIODES SILICON MULTIPLIER VARACTORS SALES OFFICES WEB SITE: http://www.tekelec-temex.com 1-36 AMERICA: +1 602 780 1995 BELGIUM: +32 (0) 2 715 90 20 FRANCE: +33 (0) 1 49 88 49 00

D-68623

Contextual Info: DGS 20-018AS IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 180 180 Type A C TO-263 AB A DGS 20-018AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC

Contextual Info: 1N5252 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage24 @I(Z) (A) (Test Condition)5.2m Tolerance (%)20 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.33 Temp Coef pp/10k8.8 Maximum Operating Temp (øC)200’

digital FUEL METER of bikes

Abstract: Electric Bike microcontroller EN26 juvenile diabetes mentor robot Fuels from Plastic Wastes TPG kwh meter electronic of whirlpool whirlpool washing machine circuit electric bike motor
Contextual Info: Freescale Corporate Responsibility Report 08 20 14 26 40 4 33 Forward-Looking Statements Disclosure This report contains “forward-looking statements” within the meaning of the federal securities laws that involve risks and uncertainties. Forward-looking statements

Contextual Info: CDLL970 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage24 @I(Z) (A) (Test Condition)5.2m Tolerance (%)20 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.33 Temp Coef pp/10k Maximum Operating Temp (øC)200 Package StyleDO-213AA

2743002122

Abstract: SR305C104KAA CLC400 AD844A AD844 AD844B AD844JR AD844S EIA-481A EL2020
Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz

v80100

Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz

2743002122

Abstract: AD844 AD844A AD844B AD844JR AD844S EIA-481A EL2020
Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz

hp33

Abstract: AD844 in6263 AD844ANZ AD844A AD844B AD844S AD844JRZ-16 HP3314A laser diode driver 1.5V input
Contextual Info: 60 MHz 2000 V/ s Monolithic Op Amp AD844 FUNCTIONAL BLOCK DIAGRAMS Wide bandwidth 60 MHz at gain of −1 33 MHz at gain of −10 Slew rate: 2000 V/μs 20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω Fast settling: 100 ns to 0.1% 10 V step Differential gain error: 0.03% at 4.4 MHz

Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz

D-68623

Contextual Info: DGS 20-018A DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V Type 180 180 DGS 20-018A VRSM VRRM Type V V 180 180 A A DGSK 40-018A C Single C A Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC

Contextual Info: FDMC8032L Dual N-Channel PowerTrench MOSFET 40 V, 7 A, 20 mΩ Features General Description „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 7 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

MMDF3207

Abstract: MMDF3207R2
Contextual Info: MOTOROLA Order this document by MMDF3207/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMDF3207 Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors Motorola Preferred Device  DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS RDS on = 33 mW

2743002122

Abstract: transresistance amp AD844 AD844A AD844ACHIPS AD844AN AD844AQ AD844B AD844S EIA-481A
Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V p-p, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz

Contextual Info: 60 MHz 2000 V/µs Monolithic Op Amp AD844 FUNCTIONAL BLOCK DIAGRAMS Wide bandwidth 60 MHz at gain of −1 33 MHz at gain of −10 Slew rate: 2000 V/µs 20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω Fast settling: 100 ns to 0.1% 10 V step Differential gain error: 0.03% at 4.4 MHz

HP11850C

Abstract: 2743002122 100k variable resistor round body AD844AQ AD844B AD844S EIA-481A AD844 AD844A AD844ACHIPS
Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V p-p, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz