33 16U Search Results

KB910Q

Abstract: FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM
Contextual Info: Material List by Single-Item/Multi-Level - All -Date : 03/22/2005 Time : 11:33:04 Drawing No: 451336 Plant: CN30 Revision: K Report by UID: 8745064

Balluff bks-s21

Abstract: BKS-S75 BKS-S74 C75B balluff 18 BKS-S20 BKS-S22 BKS-S49 C04A C49B
Contextual Info: Mini Style Connectors Connectors Connector Style Configuration 3-5 Pole Mini 7/8' - 16UN-2B Straight 3 Pole Mini Cordset 3 Pole Female - 3 Pole Male Straight - Straight 3-5 Pole Mini 7/8' - 16UN-2B Right Angle 25 25 41 25 33 Cable Length Female 7/8”-16UN-2B

Contextual Info: 2N1524/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)16u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1526/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: SST12CP12 2.4 GHz 256 QAM High-Power Amplifier Features Product Description • High Gain: - Typically 33 dB gain across 2.4–2.5 GHz over temperature -40°C to +85°C • High linear output power, typical performance: - 1.75% dynamic EVM up to 23 dBm, MCS8,

Contextual Info: SST12CP12 2.4 GHz High-Power and High-Gain Power Amplifier Features Product Description • High Gain: - Typically 33 dB gain across 2.4–2.5 GHz over temperature -40°C to +85°C • High linear output power, typical performance: - 1.75% dynamic EVM up to 23 dBm, MCS8,

Contextual Info: in te i 82375EB PCI-EISA Bridge PCEB Provides the Bridge Between the PCI Bus and EISA Bus 32-Bit Data Paths 100% PCI and EISA Compatible — PCI and EISA Master/Slave Interface — Directly Drives 10 PCI Loads and 8 EISA Slots — Supports PCI at 25 MHz to 33 MHz

638 pin micro PGA

Contextual Info: C a t a l o g 16 P r e v i e w RoHS C om pliant IC Sockets S Adapters • O .C 75[l.Q 33 - 1.752 4.4.50] S( 1 fi0 0 [4 0 .fi4 : SÌJ 52 EO. SP. 9 0.C50[ t . & P /N : 5 3 9 7 - 5 6 0 « KM ! £ < • i ss Table o f Contents Table o f Contents B6A Socketing Systems

Contextual Info: 3 A 0 Uî lf> 0 1 2 250 in I o wa ÜÎÎÉ rT n \j SECT. C 5 C A L E 2-1 3 ß O S E C T . ’ A '-'A ' CSCALE 2-15 CL JUJ Z AVAILABLE AVAILABLE NOT ABA1LAGLE r\ zO O _l f\l1 IÜLL 43 54. 7 48. 7 42. 7 36. 7 33. 7 30. 7 27. 7 24 . 7 21 . 7 1 8 .7 15.7 16 0

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM5359-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7785-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7179-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7179-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7785-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM5359-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM3742-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM7179-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

XFA-0101-16U

Abstract: XFA-0101-16UH
Contextual Info: XFA-0101-16UH SURFACE MOUNT TRANSFORMER Features • • • • • Frequency Range: 0.165 – 75 MHz Impedance Ratio: 1:16, Unbalanced to Unbalanced Industry Standard SMT package Available in Tape-and -Reel Low Cost Description The XFA-0101-16U transformer is designed for applications that

XFA-0101-16U

Contextual Info: XFA-0101-16U SURFACE MOUNT TRANSFORMER Features • • • • • Frequency Range: 0.3 – 75 MHz Impedance Ratio: 1:16, Unbalanced to Unbalanced Industry Standard SMT package Available in Tape-and -Reel Low Cost Description The XFA-0101-16U transformer is designed for applications that

TIM6472-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM6472-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS