32PINTSOP Search Results

Contextual Info: M ITS U B IS H I LSlS M5M467800/465800AJ,TP-5,-6,-5S,-6S FAST PAGE MODE 67108864-BIT 83886Q8-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 8388608-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power

LH5S

Contextual Info: / - V •I'. SPEC 0o. E L 0 7 X 0 7 3 I S S 0 E: Sec. 20 1905 To , S P E C Product Type I F ! C A T I O H S 4M b i t MAS K ROM LH5V4RXX l o d e l No. LH53V4R00T JKThis «pecificatioos cootains 12 pages including the cover and appendix. I f you have any objections, please contact as before issuing purchasing order.

is61wv5128

Abstract: IS61WV5128BLL-10TLI IS61WV5128BLL IS61WV5128BLL-10KLI IS61WV5128BLL-10BLI IS61WV5128BLL-10BI IS64WV5128BLL-10CTLA3 IS61WV5128ALL IS61WV512 IS64WV5128BLL-10BA3
Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM AUGUST 2009 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM AUGUST 2009 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL •฀ High-speed฀access฀time:฀8,฀10,฀20฀ns •฀ Low฀Active฀Power:฀85฀mW฀(typical)

is61wv5128

Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2008 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

Contextual Info: IVDCIC In d u strial G rade M X S 7 L 1 OOO 1 M-BITI1 2BK x 8 LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns • Totally static operation

LH52A512N70LL

Contextual Info: • 64K x 8 bit organization • Access time: 70/100 ns MAX. • Current consumption: Operating: 385 mW (MAX.) 110 mW (tRc, twc = "I l^s) Standby: 275 nW (MAX.) Data retention: 3 (Vcc = 3 V, T a = 25°C) 9 nW (Vcc = 3 V, TA = 40°C) • Single 5 V power supply: 5 V ±10%

CXK581000BP

Abstract: a1de CXK581000BTM cxk581000bm CXK581000B 5 pin A13E
Contextual Info: S O N Y CXK581OOOBTM/BYM/BM/BP -55LL/70LL/1 OLL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOBTM/BYM/BM/BP is a high speed CMOS static RAM organized as 131072 words by 8 bits. Special feature are low power consumption, high speed and broad package line-up.

IS61WV5128BLL

Abstract: IS61wv5128BLL-10tli IS61WV5128BLL-10KLI is61wv5128
Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM NOVEMBER 2008 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

Contextual Info: MX27L4000 4 M -BIT 5 1 2 K X FEATURES • • • • • 512K x 8 organization Wide voltage range, 2.7V to 3.6V +12.5V programming voltage Fast access time: 200/250ns Totally static operation 8 LOW VOLTAGE OPERATION CMOS EPROM Completely TTL compatible

Contextual Info: IVI>41 Ind u strial G rade M X 2 7 L 1 0 0 0 MACRONIX. INC. 1 M-BITH 2BK x 8 ] LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns