32GHZ Search Results

FMM5702

Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz Broad Band : 17.5 ~ 32GHz High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz Impedance Matched Zin/Zout = 50Ω

ablebond 84-1 LMI

Abstract: 84-1 LMI operational amplifier lmi 458 LMI 458 ZO 607 MA Ablebond 968 A004R AMMC-6232 121-351 90.295
Contextual Info: AMMC-6232 18 to 32 GHz GaAs High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies AMMC-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 18 GHz to 32GHz. The wide band and unconditionally stable performance makes this MMIC

Contextual Info: FMM5117X 20-32GHz Downconverter MMIC FEATURES • • • • Integrated Monolithic Downconverter High Linearity Single Supply Voltage Operation High Reliability DESCRIPTION The FMM5117X is a double, single balanced diode mixer downconverter designed for applications in the 20 to 32GHz

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

CHM1291

Contextual Info: CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip MFC which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable

CHA2092

Abstract: gaas amplifier
Contextual Info: CHA2092b RoHS COMPLIANT 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication

Contextual Info: AMMP-6430 27-32 GHz 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 32GHz. At 30GHz, it provides 29dBm

CHM1291

Contextual Info: CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip MFC which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable

irf 2030

Abstract: FMM5118X Eudyna Devices FMM5118
Contextual Info: FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output

Contextual Info: CHA2092b RoHS COMPLIANT 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication

Contextual Info: CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave IC D4 G4 D3 G3 D1 RF IN D4 G4 D3 G3 G2 RF OUT G1 The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication

CHA2092

Contextual Info: u n ite d monolithic semiconductors $ \ V CHA2092a * ° i V ‘V *. ^ c. $ , C \ * V * % a « ••* 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is

H40P

Abstract: NN12 P35-5127-000-200 MARCONI power
Contextual Info: P35-5127-000-200 HEMT MMIC DRIVER AMPLIFIER, 22-34GHz Features • • 20dBm Output Power 18dB Gain Description The P35-5127-000-200 is a high performance 22-34GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and point to point microwave systems . The second and third

AMMP-6333

Abstract: A004R 6333
Contextual Info: AMMP-6333 18 – 33 GHz 0.2 W Driver Amplifier in SMT Package Data Sheet Description Features The AMMP-6333 is a broadband 0.2 W driver amplifier designed for use in transmitters operating in various frequency bands from 18 GHz to 33 GHz. This small, easy to

internal circuit of ic 7486

Abstract: CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22
Contextual Info: CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

Contextual Info: Product Datasheet August 15, 2000 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

DM6030HK

Abstract: TS3332LD XM1000 XM1000-BD XM1000-BD-000V XM1000-BD-EV1
Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer September 2007 - Rev 04-Sep-07 M1000-BD Features Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

CHA5294

Contextual Info: CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

Contextual Info: SDA-4000 SDA-4000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMD’s SDA-4000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die. It is designed for use as an electro-absorptive modulated laser (EML) driver employing single-ended (SE)

TRANSISTOR 30GHZ

Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
Contextual Info: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF Circuits. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas, A J Manson and A Madni Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.

Contextual Info: Product Data Sheet August 5, 2008 35 GHz 5-Bit Phase Shifter TGP2102 Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz 0.4dB RMS Amp. Error @ 35GHz

Contextual Info: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm

Contextual Info: HMC943LP5E v02.0113 Amplifiers - lineAr & power - smT Gaas pHEMT MMIC 1.5 WaTT pOWER aMpLIFIER, 24 - 31.5 GHz Typical applications Features The HmC943lp5e is ideal for: saturated output power: +34 dBm @ 24% pAe • point-to-point radios High output ip3: +41 dBm