32R2100R Search Results

2102R

Abstract: R2100R
Contextual Info: S S I 3 2 R 2 1 0 0 R /2 1 0 1 R /2102R jilicm MfatU' . xrM/ ~ 10 Channel Thin Film Read/Write Devices A TD K G ro u p fC o m p an y October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with

Contextual Info: S S I 32R2100R wmsysbns’ 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Target Specification January 1993 DESCRIPTION FEATURES The S S I 3 2 R 2 1 0 0 R is a B iC M O S monolithic integrated circuit designed for use with two-terminal recording

Contextual Info: SSI 32R2100R/2101R/2102R M M M k m 10 Channel Thin Film Read/Write Devices s A TDK Group /Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low

h9y se

Contextual Info: SSI 32R2100R/2101R/2102R 10 Channel Thin Film Read/Write Devices October 1995 FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver,

32R2102R

Abstract: 32r2100ru10
Contextual Info: SSI 32R2100R/2101R/2102R m m 10 Channel Thin Film Read/Write Devices s u s b n s A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low

400284

Abstract: 3104d 32R2100RU IW671
Contextual Info: m m M b n s S S I 3 2 R 2 1 O O R /210 1 R 10 Channel Thin Film Read/Write Devices ' A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES 5V ±10%, 12V ±10% supply The SSI 32R2100R/2101R are BiCMOS monolithic integrated circuits designed for use with two-terminal

3b1-7 TERMINAL

Abstract: 2100R rwc 32
Contextual Info: SSI 32R2100R/2101R/2102R ¿ikm sifskm s' 10 Channel Thin Film Read/Write Devices A TDK Group /Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101 R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low

Contextual Info: SSI 32R2100R ¿iumsvskms 10-Channel Two Terminal Thin-Film Read/Write Device A TDK G roup/C om pa ny Target Specification January 1993 DESCRIPTION FEATURES The SSI 32R2100R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording

Contextual Info: mmspkrn' S S I 3 2 R 2 1 0 0 R /2 1 0 1 R 10 Channel Thin Film Read/Write Devices A TDK G roup/C om pany Advance Information January 1995 DESCRIPTION FEATURES 5V ±10% , 12V ±10% supply The SSI 32R 2100R /2101R are BiCM OS m onolithic integrated circuits designed for use w ith tw o-term inal

32R2024

Abstract: 32F8020 32p3030 32R2214RX 32P3040 73M2550 73m550 73M223 spindle and VCM motor controller 32F8011
Contextual Info: March 1996 SHORT FORM CATALOG ’96 Serving Serving Global Global Markets Markets with with Mixed-Signal Mixed-Signal ICs ICs “MSICs ” “MSICs®” Storage Communications ® Silicon Systems, Inc. • 14351 Myford Road • Tustin, CA 92680-7022 • 714 573-6000 • FAX (714) 573-6914 • e-mail: info@ssi1.com

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW