3203 TRANSISTOR Search Results

transistor 3203

Abstract: AN3203 APP3203 MAX7409 MAX966 3203
Contextual Info: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS FILTER CIRCUITS ANALOG Keywords: lowpass filter, step response, time-domain response, signal conditioning, switched-capacitor filter, SC filter Apr 26, 2004 APPLICATION NOTE 3203 Lowpass Filter Has Improved Step Response

Contextual Info: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating

3203 NPN

Abstract: 2SD2116 3203 transistor transistor 3203
Contextual Info: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C

sda 3203

Abstract: TA-317 14 PIN IC transistor 3203 SDA3203 fta satellite TA-317 TA317 suen
Contextual Info: SIEM ENS SDA 3203 1.3 GHz PLL with 3-Wire Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Command Transmission Via a 3-Wire Bus • Prescaler Output Frequency is Free from Interference Radiation • 4 Software-Controlled Outputs

NE567

Abstract: tone decoder ne567 567 tone decoder
Contextual Info: Issued March 1998 284-3203 Data Pack J Phase locked loops NE567 Data Sheet RS stock number 307-294 The RS NE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load

transistor 2sc 3203

Abstract: transistor 3203 2sc3203 transistor 3203 y
Contextual Info: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )

2SD2116

Contextual Info: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0

ZTX558

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATU RES * 400 V o lt V CE0 * 2 0 0 m A c o n tin u o u s c u rre n t * P ,o t= 1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R

OMA120

Abstract: FZT605 FZT604 FZT705 ARAA 14ge
Contextual Info: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO -400 V

2N3204

Abstract: 2N3203 SDT3775 2N3202 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors
Contextual Info: SOLITRON DEVICES INC E ' .i tï 8 3 6 8602 SOLITRON DEVICES DE I flHbñbDE OODOTBT O D 61C 0 0 9 3 9 INC POWER TRANSISTORS 2N3202 2N3203 2N3204 r- i's-i'7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES

ztx558

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATURES * 400 V olt VCE0 * 200m A continuous current * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

2sc3203

Abstract: 2sa1271
Contextual Info: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .

ZTX558

Abstract: medium power high voltage transistor DSA003769
Contextual Info: ZTX558 TYPICAL CHARACTERISTICS VCE sat - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps)

VP3203N3-G

Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

Contextual Info: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed

irp833

Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
Contextual Info: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE

TRANSISTOR C 3205

Abstract: data sw 3205 vent-captor Weber Sensors 320203 3205 transistor C 3205 curent sensor industrial air conditioning diagrams FLOW captor
Contextual Info: weber Engineered Solutions copter vent-captor Type 3202.- & Type 3205. The vent-captor type 3 2 0 2 .- is a solid-state tlow-m onitor for gaseous media in industrial applications. Being totally encapsulated in epoxy resin with no moving parts, this small,

Contextual Info: VP3203 yjß S u p e rte x in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering nformation Order Number / Package BV0SS/ ^ D S O N ' d (ON ) BVDgs (max) (min) TO-92 TO-243AA* Dice* -30V 0.6Q 4.0A VP3203N3 VP3203N8 VP3203ND * Sam e as SOT«89. * MIL visual screening available.

gsm signal amplifier

Abstract: Power Amplifier Module for GSM gsm 0308 DLT3202 GSM900 GSM RF module
Contextual Info: Preliminary DLT3202 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT3202 is a triple-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM900 and

Contextual Info: BiMOS U DUAL 8-BIT LATCHED DRIVER WITH READ BACK With 16 CMOS data latches two sets of eight , CMOS control circuitry for each set of latches, and a bipolar saturated driver for each latch, the UCN5881EP provides low-power interface with maximum flexibility. The driver includes thermal shutdown circuitry to protect

SmartDie

Abstract: 240486 Intel486TM PROCESSOR FAMILY 242202
Contextual Info: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 GX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers