32 PIN TFT Search Results

D1992

Abstract: jeida dram 88 pin
Contextual Info: MT8D88C25B32 256K x 32, 512K x 16 IC D R A M CARD I^ IC R D N IC DRAM CARD 1 MEGABYTE 256K x 32, 512K x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN# SYM BOL PIN# SYM BOL PIN# SYM B O L 1 Vss 31

Contextual Info: AK6321024W/AK6321024Z 1 Meg x 32 SRAM Module MICROCIRCUIT COEÎORATION DESCRIPTION Front View 72-Pin SIM The Accutek AK6321024 SRAM Module consists of fast high per­ formance SRAMs mounted on a low profile, 72 pin SIM or ZIP Board. The module utilizes four 32 pin 1 Meg x 4 SRAMs in SOJ

Ah 55l

Contextual Info: SONY CXK584000TM/YM/M/P|^C7oll0ioll 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word CXK584000TM CXK584000YM 32 pin TSOP Plastic 32 pin TSOP (Plastic) CXK584000M

P0820A

Contextual Info: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)

Contextual Info: SO NY CXK581OOOATM/AYM/AM/AP -70LLX/10LLX 131,072-word x 8-bit High-Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM/AP are high speed CMOS static RAMs organized as 131,072-words-by-8bits. CXK581000ATM CXK581OOOAYM 32-pin TSOP Plastic 32-pin TSOP (Plastic)

LG VARIABLE FREQUENCY DRIVE is3

Contextual Info: intèi PRELIMINARY 80960JA/JF EMBEDDED 32-BIT MICROPROCESSOR Pin/Cdde Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Load/Store Programming Model — Sixteen 32-Bit Global Registers — Sixteen 32-Bit Local Registers 8 sets

Contextual Info: CXK582000TM/YM/M SONY -8 5 L L /1 0 L L 262,144-word x 8-bit High-Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high-speed CMOS CXK582000TM CXK582000YM 32-pin TSOP Plastic 32-pin TSOP (Plastic) static RAM organized as 262,144-words-by-8-bits.

E9442

Abstract: 39A118 CXK581000AM CXK581000ATM CXK581000AYM P0820
Contextual Info: SO NY CXK581000ATM/AYM/AM/AP -70LLX/10LLX 131,072-word x 8-bit High-Speed CMOS Static RAM Description The C X K 581000A TM /AY M /A M /A P are high speed CMOS static RAMs organized as 131,072-words-by-8- CXK581000ATM CXK581000AYM 32-pin TSOP Plastic 32-pin TSOP (Plastic)

Contextual Info: TMS34020, TMS34020A GRAPHICS PROCESSORS SPVS004D - MARCH 1990 - REVISED NOVEMBER 1993 * Instruction Cycle Time - 100 ns . . . TMS34020A-40 - 1 2 5 n s . . .TMS34020-32 - 125 n s . . . TMS34020A-32 145-PIN GB PACKAGE TOP VIEW A B C D E F G H J • Fully Programmable 32-Bit

Contextual Info: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.

Contextual Info: HYUNDAI SEMICONDUCTOR HYM532256 Series 256KX 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532256 Is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2 /iF decoupling capacitor is mounted for each DRAM.

Contextual Info: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

Contextual Info: -HY UND AI HYM532200A M-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted fo r each DRAM.

MT16C

Contextual Info: ADVANCE M 1 ir n n M .“ L:? MTSLD432X S r MT16LD832 X(S) 4- MEG, a MEG x 32 DRAM MODULE DRAM • a ^ i l l 4 MEG, 8 MEG x 32 ^ 16, 32 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH IVIUUULt FEATURES • New proposed JEDEC-standard pinout in a 72-pin

toshiba MLC nand flash

Abstract: Toshiba MLC flash TLCS-900 TMP92CF29AFG BMC92CF29F0A-G LQFP176-P-2020-0
Contextual Info: August 2010 TLCS-900 Family TLCS-900/H1 Series 32-bit / 176-pin TMP92CF29AFG High-speed advanced 32-bit microcontroller with large capacity RAM and color LCD controller capable of operating at 80MHz Features TLCS-900/H1 CPU Core Internal supply voltage Internal = 1.4 to 1.6 V

MAS 560 ag

Abstract: MT8LDT132 T432
Contextual Info: ADVANCE M ir S n M M T8LDT132 S , IUiT8LOT432(S) 1 M E G X 32, 4>M E G x 3 2 D R A M M O D U L E SMALL-OUTLINE _ DRAM MODULE 1 meg x 3 2 ,4 meg x 32 4, 16 MEGABYTE, 3.3V, EXTENDED REFRESH, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 72-pin, small-outline,

Contextual Info: MD321OOOFKX-00/10/12 Issue 1.0: October 1989 1M x 32 CMOS DRAM Module MD321000FKX IsSi.H ' O ijQ O H' 1 9HÍ - ; ADVANCE PRODUCT NFORMATION 1,048,576 x 32 CMOS High Speed Dynamic RAM Features Pin Definition V Row Access Times of 80/100/120 ns Onboard Address Latching

Contextual Info: ADVANCE MT4LD23Z X S 2 MEG X 32 DRAM MODULE 2 MEG X 32 DRAM DRAM MODULE 8 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • New proposed JEDEC-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process

Z86233

Abstract: Z86243 P35-P34 p26 28 PLCC pin configuration
Contextual Info: Z86233/243 CP96DZ81201 CUSTOMER P ROCUREMENT S PECIFICA TION Z86233/243 CMOS Z8 8K ROM CONSUMER CONTROLLER PROCESSOR FEATURES Part ROM RAM Kbytes bytes Z86233 8 Z86243 8 237 236 Package Information I/O 24 32 28-pinDIP,SOIC,PLCC 40-pin DIP, 44-pin PLCC, 44-pin QFP

Contextual Info: JU l j f, '543 SM5322000TP 8MByte 2M x 32 CMOS DRAM M odule- Thin Profile General Description Features • ■ ■ The SM5322000TP is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 32 bits, in a 72-pin, leadless, single-in-line memory module (SIMM)

Contextual Info: GMM7324210CNS/SG-6/7/8 LG Semicon Co.,Ltd. 4,194,304 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Features Description The GMM7324210CNS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on single

VG46VS8325

Abstract: ic 3645 sh xaxs
Contextual Info: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)

Contextual Info: 64K X 32 BiCMOS/CMOS STATIC RAM MODULE IDT7MP4036 Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High density 2 megabit static RAM module • Low profile 64 pin ZIP Zig-zag In-line vertical Package or 64 pin S IM M (Single In-line Memory Module)

MT80132

Contextual Info: lU lir - C in f M I iit - n u iM MT8DT32; MT16D232 1 MEG, 2 MEG x 32 DRAM MODULE DRAM 1 MEG, 2 MEG x 32 m A r v i i i r 4, 8 m e g a b y t e s , sv f a s t p a g e OPTIONAL EXTENDED REFRESH M \J U U L t FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin,