31IHM Search Results

Contextual Info: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The fiPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

I486DX2

Abstract: 62406 i486DX2 66 MCM62486A-11
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA 32K x 9 Bit BurstRAM Synchronous Static RAM MCM62486A With Burst Counter and Self-Timed Write The M C M 62 4 8 6A is a 294,912 b it synchronous static random access m em ory desig n ed to provide a burstable, h ig h -p erform a n ce, secondary cache

STA 518A

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM67B518A 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write T h e M C M 67B 518A is a 589,824 bit synchronous fa st static random a ccess m e m ory designed to provide a burstable, h ig h -p erform a n ce, secondary cache

HC3208

Abstract: H3208 HB3208 HI3208
Contextual Info: H3208 1024 x 8 CMOS EEPROM M IC RO ELEC TR O N IC S C E N T E R DESCRIPTION Hughes H 3208 is a CMOS Electrically Erasable and Programmable ROM EEPROM organized as 1024 x 8 bits. Read, w rite and erase operations are performed w ith a single 5 V power supply using TTL

Contextual Info: H M 5 4 6 5 S e r i e s 65536-word x 4-bit Dynamic Random Access Memory • FEATURES • Nibble mode capability • Single 5V ±10% • On chip substrate bias generator • • Low power; 350 mW active, 20 mW standby High Speed: Access time 120 ns/150 ns/200 ns (max.)

circuit diagrams retu 3.02

Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
Contextual Info: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is

SBH21-NBPN-D

Contextual Info: 8D0S/BI/9 ¡INHd i-NdSN-isHss r£6onMNnnw 33yjans\i3Ha\dDiNND3\sa3ay:H XDa\siN3NDdWD:\¡z I dO I -L33HS| a A3y 3NON ¡BTVDS ¿6011 D •ON ‘OMQ 3ZIS _ - J bßei-S'frTA ISNV :^3d DNDNVyTIOl Diyi3W03D ONV SNOISN3WIO I^ cftlä iN I V i V ■S3INCML»T3SNTTICSdOS3U«

SD-53047

Abstract: TR94
Contextual Info: I ZE-rXW ZEO 3IO-N3 Z i £ | i7 • 6qr#si*K>«inü®qiB ico a a g sB BS É a ü ia i c») t í í n t s a i a t 9 M]S5]Ntl3d N B lim a in o tu ia Q3sn 3B ION QTIDHS ONV tNVdVnXBlON 01 AUV13[UdOUd 5[ 1VH1 NOUVNUOJNI SNIV1N00 ONIlVtfl S[H1 0U003H N0ISIA3H

A1HV

Abstract: 512kx4 HY514400J70 hy514400j csi40
Contextual Info: H Y 5 1 4 4 0 0 "HYUNDAI IM x 4 -b lt S e r ie s CM OS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72BA32 MCM72BA64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B A 32S G and M C M 72B A 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor.

burndy card edge 2,54

Abstract: 244 u3d bv-1019 CEE2X60S HM303 CEE2X92SV K/T14 N03
Contextual Info: CATALOG NO. CONTACTS PER ROW TOTAL NO CONTACTS C EE2X60S-V_Z_W 60 120 TABLE OF OWENSIONS NO C f CONTACT PAÄS BAY A BAY 8 11 49 TABLE I - TERMINATION LENGTHS D E H *.008 0.20 .590 (14,99) 2 49 0 [63,25] 3 3 4 0 [8 4 .6 4 ] S .010 [0.25] (SOLDER TAIL LENGTH)

Contextual Info: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

MT56LC

Abstract: TN-58-11
Contextual Info: PRELIMINARY MT58LC64K32D9 64Kx 32 SYNCBURST SRAM |U |IC = R O N 64K x 32 SRAM O D A Ail +3 3V SUPPLY, PIPELINED , SING LE-C YCLE DESELEC T AND SELECTABLE BU RST M O DE O r iM IV I FEATURES • • • • • • • • • • • • • • • • •

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69H618 Product Preview 64Kx 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM69H618 is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache

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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67C518 Product Preview 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67C518 is a 589,824 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache for the i486™ and Pentium™

motorola memory

Abstract: MCM62486
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM62486 32K x 9 Bit BurstRAM Synchronous Static RAM With Burst Counter and Self-Timed Write FN PACKAGE 44-LEAD PLCC CASE 777 PIN ASSIG N M EN T ^ I A2Í 7 6 ! oo I Í 12 I o I s h —i r—i . n . 1 i—i r-i >

Contextual Info: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

2802S

Abstract: r0201 D29/SEKI ST 22
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62973A Product Preview 4K x 1 2 B it Synchronous S ta tic R A M with Output Registers The MCM62S73A is a 49,152 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67J618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67J618A is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache

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