319 SERIES DIODE LASER Search Results

Contextual Info: DATA SHEET LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

PX10160E

Contextual Info: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

laser cutting circuit

Abstract: ARR01C120
Contextual Info: 120W CW Laser Diode Array Part Number: ARR01C120 DERRINGER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN

ARR01C120

Contextual Info: Industrial Microphotonics Company 120W CW Laser Diode Array Part Number: ARR01C120 DERRINGER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS

850 VCSEL

Abstract: OPV314 OPV314F OPV314Y OPV314YF OPV315 OPV315F OPV315YF PT50 current-30nA
Contextual Info: Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly OPTEK Technology OPV314F, OPV314YF, OPV315F, OPV315YF • • • • • 850 nm VCSEL technology, up to 2.5 Gbps data rate High thermal stability with Microbead lens High optical coupling to MM fiber with FC style receptacle

Contextual Info: Features • • • • • • • • • • • • • Current-controlled output current source with 5 input channels 2 selectable outputs for grounded laser diodes Output current per channel up to 200 mA Total output current up to 250 mA Rise time 1.0 ns / fall time 1.1 ns

Contextual Info: Features • • • • • • • • • • • • • Current-controlled output current source with 5 input channels 2 selectable outputs for grounded laser diodes Output current per channel up to 200 mA Total output current up to 250 mA Rise time 1.0 ns / fall time 1.1 ns

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management & Multimarket Edition 2013-07-22 Published by Infineon Technologies AG

Contextual Info: Features • • • • • • • Low power, low voltage CMOS Rectifier, voltage limiter, clock extraction on-chip no battery Small size Factory laser programmable ROM Operating temperature range -40 to +125°C Radio Frequency (RF): 100 to 450 kHz Transmission options

TSLP-2-20

Abstract: nokia mobile phone schematic ESD103-B1-02ELS
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.0, 2013-05.07 Final Power Management & Multimarket Edition 2013-05.07 Published by Infineon Technologies AG

AN4001

Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Contextual Info: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at

Contextual Info: Features • • • • • • • • • • • • • • Current-controlled output current source / 3 input channels Low power consumption Output current per channel to 250 mA Total output current to 300 mA Rise time 1.0 ns / fall time 1.1 ns On-chip RF oscillator

LASER DISTANCE METER

Abstract: IEC60825-1
Contextual Info: Machine Vision Development Kit Userguide 1. Product Overview Thank you for purchasing the Machine Vision Development Kit. The module in this kit emits a red spot or projection The Machine Vision Development Kit provides a reliable, industrial laser light source in the form

diode hp 2800

Abstract: DIODES SC-70 MARKING C3 b3 sot323 marking code C4 Sot 23-5 HSMS-2820
Contextual Info: Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • Surface Mount SOT-323 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level

45128

Contextual Info: Features • • • • • • • • • • • • • • Current-controlled output current source / 3 input channels Low power consumption Output current per channel to 250 mA Total output current to 300 mA Rise time 1.0 ns / fall time 1.1 ns On-chip RF oscillator

Contextual Info: RF2317 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2317 is a general purpose, low-cost high-linearity

Contextual Info: RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity

Contextual Info: RF2317  /,1 $5 &$79 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 3URGXFW 'HVFULSWLRQ -A- The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an

Contextual Info: RF2317
  
 
      • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an

Contextual Info: RF2317
  
 
      • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an

DATASHEET OF BJT 547

Abstract: Bjt 547 R1519 RF2317
Contextual Info: RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity

DATASHEET OF BJT 547

Abstract: RF2317 CATV amplifier transistor 001214
Contextual Info: RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity

Contextual Info: RF2317
  
 
      • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an

Analog devices assembly code marking Information

Contextual Info: wmLEM h n PA H ECK w LAE RT DT Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • Surface Mount SOT-323 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time)