3184* INTEL Search Results
3184* INTEL Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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EN80C188XL-12 |
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80C188XL - MPU Intel 186 CISC 16-Bit |
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EN80C188XL-20 |
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80C188XL - MPU Intel 186 CISC 16-Bit |
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TPS62134CRGTR |
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17-V Input, Step-down Converter with Low Power Mode Input for Intel SkyLake Platform 16-VQFN -40 to 85 |
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TPS62134DRGTT |
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17-V Input, Step-down Converter with Low Power Mode Input for Intel SkyLake Platform 16-VQFN -40 to 85 |
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TPS62134BRGTT |
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17-V Input, Step-down Converter with Low Power Mode Input for Intel SkyLake Platform 16-VQFN -40 to 85 |
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3184* INTEL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3184, Rev. A N N • •• •• • •• |
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Contextual Info: SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3184, Rev. N N • •• •• • •• |
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DB-226Contextual Info: Ordering number:ENN3184A NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Ultrasmall-sized package permitting the 2SC4432applied sets to be made small and slim. |
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ENN3184A 2SC4432 2SC4432applied 2018B 2SC4432] DB-226 | |
transistor d2001
Abstract: 2SC4432 ITR06895 ITR06896 ITR06897 ITR06898 d2001
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ENN3184A 2SC4432 2SC4432applied 2018B 2SC4432] transistor d2001 2SC4432 ITR06895 ITR06896 ITR06897 ITR06898 d2001 | |
2SC4432Contextual Info: Ordering number:EN3184 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Very small-sized package permitting the 2SC4432applied sets to be made small and slim. |
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EN3184 2SC4432 2SC4432applied 2018B 2SC4432] 2SC4432 | |
EN3553
Abstract: 2SC4432 2SC4433 D2598
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EN3553 2SC4433 100MHz) 750MHz 2SC4433] EN3553 2SC4432 2SC4433 D2598 | |
PM50RHA120
Abstract: Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200
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OCR Scan |
PM50RHA120 E80276 E80271 INA120 PM50RHA120 Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200 | |
Contextual Info: W fip l mLftm HEW LETT PACKARD Four Character 6.9 mm 0.27 inch Intelligent 5 x 7 Alphanumeric Displays Technical Data HDLX-3416 Series Features • Smart Alphanumeric Display Built-in RAM, ASCII Decoder, and LED Drive Circuitry • Softw are Controlled Dimming and Blanking |
OCR Scan |
HDLX-3416 HDLX-3416 | |
4 DIGIT LED DISPLAY .37 11 pins
Abstract: 2416 Display
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HDLX-3416 HDLX-3416. 4 DIGIT LED DISPLAY .37 11 pins 2416 Display | |
Realtek 1283
Abstract: RT8019AS rt8019 101583 data Realtek 1283 EZ80 AN 6752 rtl8019as CS8900A RM0008 RTL8019AS applications note
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TA000205-0404 eZ80F91 Realtek 1283 RT8019AS rt8019 101583 data Realtek 1283 EZ80 AN 6752 rtl8019as CS8900A RM0008 RTL8019AS applications note | |
FOD3184
Abstract: FOD3184S FOD3184SDV IEC60747-5 FOD3184SD FOD3184SV FOD3184TSV FOD3184TV FOD3184V IEC60747-5-2
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FOD3184 210ns 250kHz FOD3184 FOD3184S FOD3184SDV IEC60747-5 FOD3184SD FOD3184SV FOD3184TSV FOD3184TV FOD3184V IEC60747-5-2 | |
HB54A5129F1
Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
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HB54A5129F1-A75B/B75B/10B 64-Mword 72-bit, E0090H20 HB54A5129F1 256-Mbit HM5425401BTT) HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT | |
Ferroxcube 3C8
Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
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U-127 UC3724/UC3725, Ferroxcube 3C8 U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note | |
Contextual Info: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of |
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FOD3184 50kV/Â 210ns 250kHz FOD3184 | |
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FOD3184
Abstract: FOD31 igbt for plasma tv FOD3184SDV FOD3184TV igbt display plasma IGBT gate driver IGBT DRIVER application note IGBT Gate Drive Optocoupler FOD3184S
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FOD3184 210ns 250kHz FOD3184 FOD31 igbt for plasma tv FOD3184SDV FOD3184TV igbt display plasma IGBT gate driver IGBT DRIVER application note IGBT Gate Drive Optocoupler FOD3184S | |
Contextual Info: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of |
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FOD3184 50kV/Â 210ns 250kHz | |
HB54A5129F1U
Abstract: HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT
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512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) M01E0107 E0191H30 HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT | |
HB54A5129F1
Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
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512MB HB54A5129F1-A75B/B75B/10B HB54A5129F1 256Mbits HM5425401BTT) M01E0107 E0090H40 HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT | |
Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in |
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512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) M01E0107 E0191H20 | |
Contextual Info: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention |
OCR Scan |
51C256HL 51C256HL-15 51C256HL-20 51C256HL | |
Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in |
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512MB HB54A5129F1-A75B/B75B/10B HB54A5129F1 256Mbits HM5425401BTT) M01E0107 E0090H30 | |
HB54A5129F1U-10B
Abstract: HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT HB54A5129F1U
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512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) E0191H10 HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT | |
LVDS rsds gamma xga color
Abstract: vh31 VL57 LVDS rsds gamma VH29 Mil Electronics vh10 VH46
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FPD33584 FPD33584 SNOSA12A 18-bit LVDS rsds gamma xga color vh31 VL57 LVDS rsds gamma VH29 Mil Electronics vh10 VH46 | |
VH29
Abstract: VH34 VL61 RH63 VL41 PD-176 RL61
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FPD33584 SNOSA12B FPD33584 85MHz 70MHz S6C0666 18-Bit VH29 VH34 VL61 RH63 VL41 PD-176 RL61 |