3171 S Search Results

3171 i.c

Abstract: 2SA1575 2SC4080
Contextual Info: Ordering number: EN 3171 2SA1575/2SC4080 No.3171 PNP/NPN Epitaxial Planar Silicon Transistors S A fiY O i High-Frequency Amp, Wide-Band Amp Applications F e a tu re s - High fj • High breakdown voltage • Small reverse transfer capacitance and excellent high-frequency characteristic

USB Transceivers

Abstract: 3D 6 kv ceramic capacitor MAX3345EEUE VPO 340 MAX3344EEBE-T MAX3344EEUE MAX3345E MAX3345EEBE-T MAX3344E
Contextual Info: 19-3171; Rev 0; 2/04 ±15kV ESD-Protected USB Transceivers in UCSP with USB Detect The MAX3344E/MAX3345E USB transceivers convert logic-level signals to USB signals, and USB signals to logic-level signals. An internal 1.5kΩ USB pullup resistor supports full-speed 12Mbps USB operation. The

Contextual Info: SENSITRON SEMICONDUCTOR
 

Technical Data
Data Sheet 3171, Rev.


    


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Contextual Info: SENSITRON SEMICONDUCTOR
 

Technical Data
Data Sheet 3171, Rev.


    


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motorola mrf237

Abstract: MOTOROLA SELECTION mrf237 MRF846 MRF229 2N3553 motorola MRF627 MRF227 MRF237 MRF604 2N4427
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

MRF648

Abstract: MRF515 Motorola transistors MRF646 motorola MRF515 Motorola transistors MRF630 MRF646 Motorola transistors MRF629 Transistor MRF630 Motorola transistors MRF648 MRF644
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

2N3553 motorola

Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

ZTX415

Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

adams russell FC48Z

Abstract: KTH-2229 S280W503-6 FC48Z cable FC48Z 1-7443-1MA9 Boeing* kth-2229
Contextual Info: DASH NO. M CODE MADE FROM GSD REVISIONS ER OO ME -F ^ cn TML 05/21/02 CO 1.86 12/12/94 CN 38568 E I 1.92 35985 I CO NOTES: 1. FOR USE WITH BOEING S280W503-6 & ADAMS RUSSELL FC48Z CABLE. 2. FOR CABLING INSTRUCTIONS SEE 3 -5 4 6 -2 . 3. FOR CRIMPING USE DIE KTH-2229.

SC3150

Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
Contextual Info: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160

Contextual Info: CRO3200A-LF 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) -60 £(f) (dBc/Hz) -70 FEATURES • Frequency Range: 3200 - 3200 MHz • Tuning Voltage: 0.5-4.5 Vdc

STGL 12

Abstract: ha 1452 1SS g STGL 52
Contextual Info: PF783-02 EPSON SEDI 570Doa Dot Matrix High Duty LCD Driver • 80 Output Segment Driver • Built-in Display RAM 80x200 bits • Self-refresh Function • DESCRIPTION T h e S E D 1 5 7 0 is an 80 output segm ent column driver with an internal display R AM . This drive is suitable for

msm486

Abstract: u9810 R101 IRQ12
Contextual Info: APPLICATION NOTE 053 IRQ12 on MSM486SV/SN for other Application _ Nordstrasse 4F / CH - 4542 Luterbach From: RP Product: MSM486SV /SN To: Customer/Support Version: V? Date: 09.97 BIOS: V? If the PS/2 mouse is not used, the IRQ12 Input can be used for another application. It is also possible to

LM 3171

Contextual Info: S C S -T H O M S O N « IM i[ L [ iO T ! 0 g S LM 317L LOW CURRENT 1.2V TO 37V ADJUSTABLE VOLTAGE REGULATOR • OUTPUT VOLTAGE RANGE : 1.2 TO 37V ■ OUTPUT CURRENT IN EXCESS OF 100 mA ■ LINE REGULATION TYP. 0.01% ■ LOAD REGULATION TYP. 0.1% ■ THERMAL OVERLOAD PROTECTION

2N3946 MOTOROLA

Abstract: 2N3947 2N3946 2N3946 equivalent 2N3947 MOTOROLA
Contextual Info: M OTOROLA SC XSTRS/R F 12E D | b3b?254 G0flfc.3fl0 G | M A X IM U M R A T IN G S Symbol Value Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Rating Unit Ve b o 6.0 Vdc Collector Current — Continuous ic 200 mAdc

Contextual Info: ALLEGRO MICROSYSTEMS INC blE » □S0433fl 000b05b 73b M A L 6R 5818-F BiMOS H 32-B IT SERIAL-INPUT, LATCHED SOURCE DRIVERS W ITH ACTIVE DMOS PULL-DOWNS U C N 5818EPF ON [ « £lin o [w -< 3 - flxno Qc “ in o s? Olin o S *ir>o E? •in o <• ^ 3 - m-<

Contextual Info: 4 THIS DRAWING 3 IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 2 - LOC ALL RIGHTS RESERVED. By - R E V IS IO N S G 4 P LTR AB1 DESCRIPTION DATE REVISED PER E C O - 1 1 - 0 0 4 5 8 7 zT U T T O © 5 WIRE RANGE 1 6 - 1 4 AWG SOLID OR STRANDED DWN RK HMR

N5818AF-1

Contextual Info: 5818-F BiMOS II 32-BIT SERIAL-INPUT. LATCHED SOURCE DRIVERS WITH ACTIVE DMOS PULL-DOWNS Designed prim arily for use with vacuum fluorescent displays, the UCN5818AF and UCN5818EPF sm art power BiM O S II drivers com bine CM OS shift registers, data latches, and control circuitry, with bipolar

Contextual Info: CAT59C11H Preliminary CAT59C11H - High Endurance IK BIT SERIAL E2PROM Preliminary DESCRIPTION FEATURES The C AT59C11H is a high endurance 1K bit Serial E2PROM memory device organized in 64 registers of 16 bits or 128 registers of 8 bits each. Each register can be written or read serially by using

SCXI-1100

Abstract: SCXI-1300 PCI-1200 thermocouple sensor
Contextual Info: SCXI 32-Channel Multiplexer Amplifier SCXI-1100 Features 32 differential channels Low-cost signal conditioning for: Millivolt and volt inputs 4-20 mA and 0-20 mA inputs Software-programmable instrumentation amplifier Gains up to 2,000 Scanning rates to 250 kS/s 4 µs settling

Contextual Info: Fachverband Batterien ZVEI Merkblatt Nr. 5 Ausgabe Juli 2014 Transport von Batterien Hinweise für innerstaatliche und grenzüberschreitende Beförderungen von neuen, beschädigten sowie gebrauchten Batterien und anderen batteriespezifischen Gefahrgütern auf der Straße zur Umsetzung des

2sa1424

Abstract: NE88900 NE889
Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in