310 NM Search Results

P3596

Abstract: GEXY6710 Q62702-P1673 Q62702-P3595 Q62702-P3596 Q62702-P874
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität

GEXY6710

Abstract: OHLY0598
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA)

Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol

diode mdd 310

Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol

THYRISTOR MODULE IXYS MCC 310

Abstract: THYRISTOR MODULE IXYS MCC 310-14io1 IXYS MCC 310 MCD 855C 220 K THYRISTOR MODULE IXYS MCC 310 16io1 IXYS MCD-310 ixys mcc
Contextual Info: MCC 310 MCD 310 ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 800-2200 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 1 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1 MCC 310-16io1

Contextual Info: MCC 310 MCD 310 ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 1 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1 MCC 310-16io1

Contextual Info: Q Thyristor Modules Thyristor/Diode Modules MCC 310 MCD 310 ^TRMS ^TAVM = 2 x 500 A = 2 x 320 A v RRM = 800 -1800 V v RSM V RRM v DSM V DRM V V Type 800 900 1300 1500 1700 1900 1200 1400 1600 1800 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1

IXYS MCD-310

Abstract: ixys mcc 56 THYRISTOR MODULE IXYS MCC 310 ZY 20 DIODE IXYS MCC 310 ixys mcc 132 12
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 310 ITRMS = 2 x 500 A MCD 310 ITAVM = 2 x 320 A VRRM = 800 - 1800 V 3 7 2 VRSM VRRM Type VDSM VDRM V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1

Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine

OS-PCN-2006-015-A

Abstract: GEXY6710 OHLY0598 Q62702-P3596
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Not for new design (valid till DC0837, additional information see OS-PCN-2006-015-A) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 310 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 112 6 144 100 25 124 K AK A G K G K VWK February 1996 TT 310 N, TD 310 N, DT 310 N

IXYS MCD-310

Abstract: IXYS MCD 200
Contextual Info: MCC 310 MCD 310 ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 2100 V Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2100 3 Type 6 7 1 5 4 2 3 7 6 5 1 MCC Version 1 2 4 Version 1 MCC 310-22io1 MCD 310-22io1 3 1 5 4 2 MCD Symbol Conditions

Contextual Info: ED-313SGU GaP/GaP LED Chips Standard-Green Features : Typical Applications : • GaP epi wafer • Lamp • SMD Outline Dimensions : Unit: um 310 295 p-Electrode p-GaP epi layer n-GaP epi layer 310 p-Electrode 125 255 n-GaP Substrate Emission area 310 n-Electrode

SML-310F

Abstract: SML-310 SML-310DT SML-310FT SML-310JT SML-310LT SML-310MT SML-310PT SML-310VT SML-310YT
Contextual Info: SML-310 Series LED lamps Small, chip LEDs SML-310 Series !External dimensions Units : mm The SML-310 series are small, chip LEDs. The compact and leadless design of these LEDs allows for high mounting density. 0.8 1.6+0.2 1.2 0.25 0.8 !Features 1) Four colors: red, orange, yellow and green.

Contextual Info: Preliminary Data Sheet NX8346TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0032EJ0300 Rev.3.00 Dec 13, 2013 DESCRIPTION <R> The NX8346TB is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm

Contextual Info: DATA SHEET LASER DIODE NX7338BF-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7338BF-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.

Contextual Info: DATA SHEET LASER DIODE NX7339BB-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7339BB-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.

Contextual Info: DATA SHEET LASER DIODE NX7337BF-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7337BF-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.

Contextual Info: DATA SHEET LASER DIODE NX7339BB-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7339BB-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.

Contextual Info: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

Contextual Info: DATA SHEET LASER DIODE NX8341,NX8343,NX8344 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341, NX8343, and NX8344 Series are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA

NEC A40

Contextual Info: DATA SHEET LASER DIODE NX7304BG-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR FIBEROPTIC COMMUNICATIONS DESCRIPTION The NX7304BG-CC is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.

Contextual Info: Preliminary Data Sheet NX8349TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0200 Rev.2.00 Dec 13, 2013 DESCRIPTION <R> The NX8349TS is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode