31 NAB 12 T 16 Search Results

semikron skiip 31 nab 12

Abstract: semikron skiip 32 nab 12 SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 31 Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab Semikron skiip 31 nab 12 T 10 semikron skiip nab
Contextual Info: se MIKROn SKiiP 31 NAB GB Absolute Maximum Ratings Symbol Conditions 1 Values Units Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C 6GG ± 2G 5G I 35 1GG I 7G 57 I 3S 114 I 76 V V A A A A SGG

skiip 31 nab 125 t 12

Abstract: Semikron skiip 31 nab 12 semikron skiip 31 nab 125 t 12 semikron skiip 32 nab 125 Semikron skiip 31 nab 12 T 16 semikron skiip 32 nab 12 SKiiP 31 NAB 12 T 16 skiip 32 nab 125 t 12 Semikron skiip 31 nab 12 T 10 semikron skiip 32 nab 12 t 7
Contextual Info: SKiiP 31 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Chopper see SKiiP 22 NAB 12) Values Units 1200 ± 20 45 / 30 90 / 60 38 / 26 76 / 52 V V A A A A 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125

Semikron skiip 22 nab 12

Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Contextual Info: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0

Semikron skiip 31 nab 12

Abstract: Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab 12 T 10 semikron skiip 32 semikron skiip nab 12 31 NAB 12 T 16 32NAB12 E6353
Contextual Info: SKiiP 31 NAB 06 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 600 ± 20 50 / 35

skiip 31 nab 125 t 12

Abstract: SKiiP 31 NAB 12 semikron skiip 32 Semikron skiip 31 nab 12 semikron skiip nab 06 semikron skiip 32 nab 12 T 7 semikron skiip 32 nab 12 semikron skiip 32 nab 125 semikron skiip nab SKiiP 31 NAB 12 T 16
Contextual Info: SKiiP 32 NAB 06 Absolute Maximum Ratings 3 Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values Units 600 ± 20 75 / 50 150 / 100 75 / 50 150 / 100 V V A A A A 800 25 370 680 – 40 . . . + 150 – 40 . . . + 125 2500 V A A A2s °C

Semikron skiip 31 nab 12

Abstract: SKiiP 31 NAB 12 T 16 Semikron skiip 31 nab 12 T 10 semikron skiip 31 Semikron skiip 31 nab 12 T 16 semikron skiip nab semikron skiip 31 nab 125 t 12 MiniSKiiP semikron skiip 33 semikron skiip nab 12
Contextual Info: SKiiP 31 NAB 06 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 600 ± 20 50 / 35

SEMIKRON SKIIP 20 NAB 12 T 17

Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Contextual Info: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A

IDT71V016

Abstract: IDT71V016SA SO44-2
Contextual Info: IDT71V016SA 3.3V CMOS Static RAM 1 Meg 64K x 16-Bit Features Description ◆ The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs.

semikron skiip 32 nab 125

Abstract: skiip 31 nab 125 t 12 Semikron skiip 31 nab 12 semikron skiip 32 nab 12 Semikron skiip 30 nab 12 Semikron skiip 31 nab 12 T 10 Semikron skiip 22 nab 12 semikron skiip 32 Semikron skiip 22 nab inverter igbt circuit diagrams
Contextual Info: SKiiP 30 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Chopper see SKiiP 22 NAB 12) Values Units 1200 ± 20 33 / 22 66 / 44 38 / 26 76 / 52 V V A A A A 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125

Semikron skiip 31 nab 12 T 16

Abstract: semikron skiip 21 nab 12 T 31 Semikron skiip 31 nab 12 semikron skiip 21 nab 063 T 40 semikron skiip 32 nab 12 Semikron skiip 31 nab 12 T 10 semikron skiip 32 SKiiP 31 NAB 12 T 16 skiip 21nab 063 Semikron skiip 32 nab
Contextual Info: SKiiP 30 NAB 06 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 600 ± 20 36 / 25

SKIIP 32 nab 12 t 49

Abstract: SKiiP 83 AC 12 i t 1 skiip 31 nab 12 t 49 semikron skiip 32 nab 12 Semikron skiip 31 nab 12 semikron skiip 20 nab 12 I T 38 semikron skiip 24 nab 125 t 12 Semikron skiip 22 nab SEMIKRON SKIIP 20 NAB 12 T 17 Semikron skiip 22 neb 063
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technologie • Druckkontaktverbindungen aller Leistungs- und Steueranschlüsse statt gelöteter Kontaktierungen. ■ Integration neuester Chiptechnologie • schaltverlustarme, 600V oder 1200V, homogene NPT IGBTs mit antiparalleler

semikron skiip 21 nab 12 T 31

Abstract: semikron skiip 21 nab 063 T 40 Semikron skiip 30 nab 12 SKIIP 21NAB 063 T SKiiP 31 NAB 12 semikron skiip 31 nab 125 t 12 semikron skiip nab 12 semikron skiip 21 nab 06 skiip 21nab 063 semikron skiip 21 nab 12
Contextual Info: SKiiP 30 NAB 06 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 600 ± 20 36 / 25

Contextual Info: s e MIKRO n SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings Symbol I Conditions 11 Inverter & Chopper Vces Vges Theatsink = 25 / 80 °C lc tp < 1 mS, Theatsink ~ 25 / 80 C Icm Theatsink = 25 / 80 °C If = -lc Ifm = - I cm tp < 1 mS, Theatsink — 25 / 80 C

semikron skiip 31 nab 12 T 18

Abstract: inverter igbt circuit diagrams 32NAB12 skiip 32 nab 12 t 18 skiip 32 nab 125 t 12 Semikron skiip 31 nab 12 skiip 31 nab 125 t 12 semikron skiip 32 nab 12 t 7 Semikron skiip 31 nab 12 T 10 9V bridge rectifier ic
Contextual Info: SKiiP 32 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 1200 ± 20 65 / 45

A6832

Abstract: A6832EEP-T A6832SEP-T A6832SEPT A6832EP
Contextual Info: Data Sheet 26185.110F A6832 DABiC-5 32-Bit Serial Input Latched Sink Drivers A6832SEP/A6832EEP 40 41 42 43 1 44 2 3 4 5 6 44-pin PLCC 7 39 8 38 28 29 27 30 17 26 31 16 25 32 15 24 33 14 23 34 13 22 35 12 21 36 20 37 19 9 10 11 18 Intended originally to drive thermal printheads, the A6832 has been

Contextual Info: Data Sheet 26185.110D A6832 DABiC-5 32-Bit Serial Input Latched Sink Drivers A6832SEP/A6832EEP 40 41 42 43 1 44 2 3 4 5 6 44-pin PLCC 7 39 8 38 28 29 27 30 17 26 31 16 25 32 15 24 33 14 23 34 13 22 35 12 21 36 20 37 19 9 10 11 18 Intended originally to drive thermal printheads, the A6832 has been

a6832sept

Abstract: allegromicrosystems
Contextual Info: Data Sheet 26185.110C A6832 DABiC-5 32-Bit Serial Input Latched Sink Drivers A6832SEP/A6832EEP 40 41 42 43 1 44 2 3 4 5 6 44-pin PLCC 7 39 8 38 28 29 27 30 17 26 31 16 25 32 15 24 33 14 23 34 13 22 35 12 21 36 20 37 19 9 10 11 18 Intended originally to drive thermal printheads, the A6832 has been

110E

Abstract: A6832 A6832EEP-T A6832SEP-T
Contextual Info: Data Sheet 26185.110E A6832 DABiC-5 32-Bit Serial Input Latched Sink Drivers A6832SEP/A6832EEP 40 41 42 43 1 44 2 3 4 5 6 44-pin PLCC 7 39 8 38 28 29 27 30 17 26 31 16 25 32 15 24 33 14 23 34 13 22 35 12 21 36 20 37 19 9 10 11 18 Intended originally to drive thermal printheads, the A6832 has been

SRM21016LLTT12

Abstract: 8ie22
Contextual Info: PF865-01 EPSON SRM21016LLTT i2 1 M-Bit Static RAM • W ide Voltage Operation and Low Current Consumption • Access Tim e 120ns 2.7V • 65,536 Words X 16-Bit Asynchtonous • W ide Tem perature Range I D E S C R IP T IO N The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

SRM20W116LLTX2

Contextual Info: EPSON PF867-03 SRM20W116 LLTX2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns (2.7V) •6 5 ,5 3 6 W ordsXI 6-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SRM 20W 116 LLTX 2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

Contextual Info: r= J S G S -T H O M S O N ^ 7 # , [M tM tik tE O T i « ® T D A 7 3 3 4 LOW NOISE STEREO PREAMPLIFIER PRODUCT PREVIEW • DUAL CHANNEL PROCESSOR FOR PLAY­ BACK APPLICATIONS. . LOW NOISE HEAD PREAMPLIFIER GROUND COMPATIBLE ■ MUTE, AUTOREVERSE METALVNORMAL

2116 ram

Abstract: 2116 intel intel 2116 COUNTER IC TTL 2116 3242 intel
Contextual Info: intel’ 3242 ADDRESS MULTIPLEXER AND REFRESH COUNTER FOR 16K DYNAMIC RAMs • Single Power Supply: +5 Volts ±10% ■ Ideal For 2116 ■ Simplifies System Design ■ Address Input to Output Delay: 9ns Driving 15 pF, 25ns Driving 250pF ■ Reduces Package Count

71v65603

Contextual Info: 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V65603 IDT71V65803 reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround.

Contextual Info: HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM IDT709279S/L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max. – Industrial: 12ns (max.)