30V 28A MOSFET Search Results

RS1E280

Contextual Info: RS1E280GN Nch 30V 28A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 2.6mW RDS(on) at 4.5V (Max.) 3.3mW ID 28A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * RDS ON < 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain

Contextual Info: AP40T03GI RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS ON Single Drive Requirement Lower On-resistance ID G 30V 25m 28A S Description Advanced Power MOSFETs from APEC provide the

40T03GJ

Abstract: 40t03gh 40T03G 40t03
Contextual Info: AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Low Gate Charge Fast Switching 25m ID G 28A S Description Advanced Power MOSFETs from APEC provide the

GE40T03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GE40T03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GE40T03 provide the designer with the best combination of fast switching, ruggedized device design, low

GI40T03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GI40T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GI40T03 provide the designer with the best combination of fast switching, ruggedized device design, low

GU40T03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GU40T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GU40T03 provide the designer with the best combination of fast switching, ruggedized device design, low

GJ40T03

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GJ40T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GJ40T03 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: AP40T03GS/P Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D Simple Drive Requirement 30V RDS ON Low Gate Charge Fast Switching ID G RoHS Compliant 25m 28A S Description The Advanced Power MOSFETs from APEC provide the

STL28NF3LL

Contextual Info: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE • ■

40t03gh

Abstract: 40T03GJ 40T03G 40t03 AP40T03GJ AP40T03GH marking codes transistors SSs 40T03GH transistor N-CHANNEL ENHANCEMENT MODE POWER MOSFET mosfet low vgs
Contextual Info: AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 25mΩ ID G 28A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA TYPE VDSS R DS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

AP40T03GI

Contextual Info: AP40T03GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Lower On-resistance BVDSS 30V RDS ON 25mΩ ID G 28A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP40T03GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 30V RDS ON 25mΩ ID G 28A S Description

Contextual Info: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

STL28NF3LL

Contextual Info: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

STL28NF3LL

Contextual Info: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET TARGET DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION

FDMS8672AS

Contextual Info: FDMS8672AS N-Channel PowerTrench SyncFET tm TM 30V, 28A, 5.0mΩ Features General Description „ Max rDS on = 5.0mΩ at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

FDMS8660AS

Abstract: 4410 mosfet fairchild top marking fdms8660
Contextual Info: FDMS8660AS N-Channel PowerTrench SyncFET TM tm  30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

fairchild top marking

Abstract: FDMS8672AS
Contextual Info: FDMS8672AS N-Channel PowerTrench SyncFET TM tm  30V, 28A, 5.0m: Features General Description „ Max rDS on = 5.0m: at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

FDMS8660AS

Contextual Info: FDMS8660AS N-Channel PowerTrench SyncFET tm TM 30V, 49A, 2.1mΩ Features General Description „ Max rDS on = 2.1mΩ at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0mΩ Features General Description „ Max rDS on = 9.0mΩ at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest