30P1 Search Results
30P1 Datasheets (20)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 30P12 | Unknown | Shortform Electronic Component Datasheets | Short Form | 64.41KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 30P16 | Unknown | Shortform Electronic Component Datasheets | Short Form | 118.87KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 30P18 | Unknown | Shortform Electronic Component Datasheets | Short Form | 64.41KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 30P19 | Unknown | Shortform Electronic Component Datasheets | Short Form | 47.64KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE30P15S
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NCEPOWER | NCE30P15S is a -30V, -15A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 10mΩ at VGS=-10V, suitable for load switch and PWM applications in surface mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLD30P10T
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Maplesemi | P-Channel MOSFET with -100V drain-source voltage, -30A continuous drain current, 45mΩ typical RDS(on) at VGS = -10V, housed in TO-252 package, suitable for PWM, load switch, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE30P12BS
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NCEPOWER | NCE30P12BS is a channel enhancement mode power MOSFET with -30V drain-source voltage, -12A continuous drain current, and low on-resistance of less than 11mΩ at -4.5V gate voltage, suitable for PWM and load switch applications in a surface mount SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HSH30P15
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Huashuo Semiconductor | HSH30P15 is a P-channel 150V fast switching MOSFET with advanced trench technology, featuring 56 mΩ typical RDS(ON), low gate charge, and 100% EAS testing, suitable for high-density power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HSBA30P15
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Huashuo Semiconductor | P-Ch 150V Fast Switching MOSFET with -30A continuous drain current, 56mΩ typical RDS(ON), advanced trench technology, low gate charge, and 100% EAS guaranteed, suitable for high-density power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CJU30P10
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JCET Group | P-Channel Power MOSFET CJU30P10 in TO-252-2L package with -100V drain-source voltage, -30A continuous drain current, and 38mΩ typical RDS(on) at -10V VGS, featuring low gate charge and trench technology for high efficiency. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE30P16Q
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NCEPOWER | P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -16A continuous drain current, 18mΩ typical RDS(ON) at VGS=-10V, and 30W power dissipation in a DFN3.3x3.3 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK30P15AS
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AK Semiconductor | P-Channel Enhancement Mode Power MOSFET AK30P15AS with -30V drain-source voltage, -15A continuous drain current, 12mΩ typical RDS(ON) at VGS=-10V, and SOP-8 surface mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE30P15AS
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NCEPOWER | P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -15A continuous drain current, 12mΩ typical RDS(ON) at VGS=-10V, and SOP-8 surface mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE30P12S
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NCEPOWER | 30V -12A P-channel enhancement mode power MOSFET with trench technology, offering low RDS(ON) of 13mΩ at VGS=-10V and 21mΩ at VGS=-4.5V, suitable for load switch and PWM applications in surface mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK30P12S
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AK Semiconductor | AK30P12S P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -12A continuous drain current, RDS(ON) less than 25mΩ at VGS=-4.5V, and low gate charge, suitable for load switch and PWM applications in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK30P15S
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AK Semiconductor | P-Channel Enhancement Mode Power MOSFET AK30P15S with -30V drain-source voltage, -15A continuous drain current, 12mΩ RDS(ON) at VGS=-10V, and 15mΩ at VGS=-4.5V, housed in SOP-8 surface mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE30P10S
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NCEPOWER | P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -10A continuous drain current, 34mΩ typical RDS(ON) at VGS=-4.5V, and 21mΩ at VGS=-10V, suitable for load switch and PWM applications in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SK30P10
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Shikues Semiconductor | VDS=-100V, ID=-30A, RDS(ON)<50mΩ @ VGS=-10V, <55mΩ @ VGS=-4.5V, trench technology, high density cell design. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CJU30P10A
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JCET Group | P-Channel Power MOSFET CJU30P10A in TO-252-2L package featuring -100V drain-source voltage, -30A continuous drain current, 48mΩ typical RDS(on) at -10V VGS, and advanced trench technology for low on-resistance and high cell density. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK30P10S
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AK Semiconductor | AK30P10S P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -10A continuous drain current, 34mΩ RDS(ON) at VGS=-4.5V, and low gate charge for load switch and PWM applications in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
30P1 Price and Stock
Rochester Electronics LLC LD6815TD-30P,125IC REG LINEAR 3V 150MA 5-TSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LD6815TD-30P,125 | Bulk | 48,983 | 1,165 |
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Buy Now | |||||
Diodes Incorporated SBR2M30P1-7DIODE SBR 30V 2A POWERDI123 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SBR2M30P1-7 | Cut Tape | 5,232 | 1 |
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Buy Now | |||||
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SBR2M30P1-7 | Tape & Reel | 24 Weeks | 3,000 |
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Get Quote | |||||
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SBR2M30P1-7 | 24,000 | 14 Weeks | 3,000 |
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Buy Now | |||||
Rochester Electronics LLC MSP430P112IDWIC MCU 16BIT 4KB OTP 20SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MSP430P112IDW | Tube | 2,923 | 76 |
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Buy Now | |||||
Hirose Electric Co Ltd DF14A-30P-1.25H(52)CONN HEADER SMD R/A 30POS 1.25MM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DF14A-30P-1.25H(52) | Digi-Reel | 2,690 | 1 |
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Buy Now | |||||
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DF14A-30P-1.25H(52) | 1,000 |
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Buy Now | |||||||
Hirose Electric Co Ltd MDF76-30P-1CCONN PLUG HSG 30POS 1.00MM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MDF76-30P-1C | Bag | 704 | 1 |
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Buy Now | |||||
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MDF76-30P-1C | 14 Weeks | 100 |
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Buy Now | ||||||
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MDF76-30P-1C | 100 |
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Buy Now | |||||||
30P1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Normal mode SN Coils Terminal Base Type – P1 Type [RoHS [RoHS Compliant] Compliant] Rated current A 2 2 2 Model SN8S-30P1 SN8S-40P1 SN8S-50P1 DC resistance (⏲) max. 0.042 0.052 0.068 Inductance ( H) min. 26 46 72 Temperature rise(K) max. 19 20 23 Finished dimensions (mm) |
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SN8S-30P1 SN8S-40P1 SN8S-50P1 100kHz, KC547 P0915MCAF10VOL08E | |
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Contextual Info: Capacitive proximity sensors CFDK 30P1600 Capacitive proximity sensors dimension drawing 30 18,5 Pot 34,4 4,3 65 26 LED 9,3 20 14,5 general data photo mounting type shielded nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm |
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30P1600 | |
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Contextual Info: Ultrasonic sensors UNDK 30P1703 Ultrasonic proximity sensors dimension drawing 30 31,1 Pot 18,4 65 12 4,5 37,4 23 LED 11,4 20 14 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ. 4 % Sde |
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30P1703 | |
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Contextual Info: Inductive sensors IFRK 30P1201/L Inductive proximity switch dimension drawing 61 M30 x 1,5 20 80 SW 36 LED general data photo mounting type unshielded nominal sensing distance Sn 15 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data |
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30P1201/L | |
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Contextual Info: Ultrasonic sensors UNDK 30P1713 Ultrasonic proximity sensors dimension drawing 30 31,1 Pot 18,4 65 12 4,5 37,4 23 LED 11,4 20 14 general data photo sensing range sd 30 . 250 mm scanning range far limit Sde 30 . 250 mm hysteresis typ. 4 % Sde repeatability |
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30P1713 | |
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Contextual Info: Capacitive proximity sensors CFAK 30P1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 25 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift |
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30P1200 | |
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Contextual Info: Inductive sensors IFRM 30P1601/L Inductive proximity switch dimension drawing 20 SW 36 60 50 M30 x 1,5 LED general data photo mounting type shielded nominal sensing distance Sn 10 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data |
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30P1601/L | |
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Contextual Info: Capacitive proximity sensors CFAK 30P1100 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED general data photo mounting type unshielded nominal sensing distance Sn 8 mm temperature drift ± 15 % 0 . +70 °C sensitivity adjustment |
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30P1100 | |
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Contextual Info: Capacitive proximity sensors CFAM 30P1600/S14 Capacitive proximity sensors dimension drawing 82 58 M30 x 1,5 LED 11 SW 36 Pot M12 x 1 general data photo mounting type shielded nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm |
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30P1600/S14 70sensitivity | |
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Contextual Info: Capacitive proximity sensors CFAM 30P1600 Capacitive proximity sensors dimension drawing 58 71 M30 x 1,5 SW 36 LED Pot general data photo mounting type shielded nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm temperature drift |
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30P1600 | |
UNDK 30P1703Contextual Info: Ultrasonic sensors UNDK 30P1703/S14 Ultrasonic proximity sensors dimension drawing 31,1 30 Pot 18,4 11 4,5 37,4 65 23 LED M12 x 1 11,4 20 14 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ. |
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30P1703/S14 UNDK 30P1703 | |
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Contextual Info: Ultrasonic sensors URDK 30P1703/S14 Ultrasonic retro-reflective sensors dimension drawing 31,1 30 Pot 18,4 11 4,5 37,4 65 23 LED M12 x 1 11,4 20 14 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range |
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30P1703/S14 | |
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Contextual Info: Inductive sensors IFRM 30P1501/S14L Inductive proximity switch dimension drawing SW 36 65 45 52 M30 x 1,5 4xLED M12 x 1 general data photo mounting type shielded nominal sensing distance Sn 10 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red |
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30P1501/S14L | |
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Contextual Info: Ultrasonic sensors UNAM 30P1104/S14 Ultrasonic proximity sensors dimension drawing M30 x 1,5 81 58,5 70 SW 36 LED Pot M12 x 1 general data photo scanning range sd 200 . 1500 mm scanning range far limit Sde 200 . 1500 mm hysteresis typ. 4 % Sde repeat accuracy |
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30P1104/S14 | |
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Contextual Info: Capacitive proximity sensors CFAM 30P1600/S14 Capacitive proximity sensors dimension drawing 82 58 M30 x 1,5 LED 11 SW 36 Pot M12 x 1 general data photo nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm mounting type shielded |
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30P1600/S14 | |
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Contextual Info: Capacitive proximity sensors CFDK 30P1600/S14 Capacitive proximity sensors dimension drawing 30 18,5 Pot 10 4,3 34,4 65 26 LED M12 x 1 11,2 20 14,5 general data photo nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm mounting type |
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30P1600/S14 50tput | |
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Contextual Info: Capacitive proximity sensors CFAM 30P1600 Capacitive proximity sensors dimension drawing 58 71 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm mounting type shielded GND electrode |
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30P1600 | |
631kContextual Info: Normal mode SN Coils Terminal Base Type – P1 Type [RoHS [RoHS Compliant] Compliant] Rated current A 2 2 2 Model SN8S-30P1 SN8S-40P1 SN8S-50P1 DC resistance (⏲) max. 0.042 0.052 0.068 Inductance ( H) min. 26 46 72 Temperature rise(K) max. 19 20 23 Finished dimensions (mm) |
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SN8S-30P1 SN8S-40P1 SN8S-50P1 100kHz, KC547 SN8S-40P1 SN8S-30P1 P0938MCAF10VOL09E 631k | |
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Contextual Info: Ultrasonic sensors UNAM 30P1104/S14 Ultrasonic proximity sensors dimension drawing M30 x 1,5 81 58,5 70 SW 36 LED Pot M12 x 1 general data photo scanning range sd 200 . 1500 mm scanning range far limit Sde 200 . 1500 mm hysteresis typ. 4 % Sde repeat accuracy |
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30P1104/S14 | |
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Contextual Info: Capacitive proximity sensors CFAK 30P1600 Capacitive proximity sensors dimension drawing 71 56 M30 x 1,5 SW 36 LED Pot general data photo mounting type shielded nominal sensing distance Sn 15 mm nominal sensing distance Sn adjustable 4 . 15 mm temperature drift |
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30P1600 | |
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Contextual Info: Capacitive proximity sensors CFAH 30P1200/S14 Capacitive proximity sensors dimension drawing Pot LED M12 x 1 SW 36 SW 36 59 71 80 30 65 25 M30 x 1,5 SW 24 Teflon cable dia 3,7 mm L=1m M30 x 1,5 general data photo special type sensor for high temperatures mounting type |
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30P1200/S14 | |
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Contextual Info: Ultrasonic sensors UNAM 30P1104/S14 Ultrasonic proximity sensors dimension drawing M30 x 1,5 81 58,5 70 SW 36 LED Pot M12 x 1 general data photo sensing range sd 200 . 1500 mm scanning range far limit Sde 200 . 1500 mm hysteresis typ. 4 % Sde repeat accuracy |
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30P1104/S14 | |
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Contextual Info: Inductive sensors IFRM 30P1201/L Inductive proximity switch dimension drawing 20 49 SW 36 69,5 10 M30 x 1,5 LED general data photo mounting type unshielded nominal sensing distance Sn 15 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data |
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30P1201/L | |
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Contextual Info: Ultrasonic sensors UNDK 30P1703/S14 Ultrasonic proximity sensors dimension drawing 31,1 30 Pot 18,4 11 4,5 37,4 65 23 LED M12 x 1 11,4 20 14 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ. |
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30P1703/S14 | |