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    30A HIGH SPEED DIODE Search Results

    30A HIGH SPEED DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM110/BGA
    Rochester Electronics LLC LM110 - VOLT. FOLLOWER, HIGH-SPEED - Dual marked (M38510/10602BGA) PDF Buy
    LM110/BPA
    Rochester Electronics LLC LM110 - VOLT. FOLLOWER, HIGH-SPEED - Dual marked (M38510/10602BPA) PDF Buy
    26LS31/B2A
    Rochester Electronics LLC 26LS31 - Line Driver, Quad Differenctial, High Speed, RS-422 - Dual marked (5962-7802301M2A) PDF Buy
    26LS30/BEA
    Rochester Electronics LLC 26LS30 - Line Driver, Dual Differential, High Speed RS-422 Pparty Line/Quad Single Ended RS-423 - Dual marked (5962-8672101EA) PDF Buy
    26LS30/B2A
    Rochester Electronics LLC 26LS30 - Line Driver, Dual Differential, High Speed RS-422 Pparty Line/Quad Single Ended RS-423 - Dual marked (5962-86721012A) PDF Buy

    30A HIGH SPEED DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


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    YG838C03R O-220F 500ns, PDF

    30A high speed diode

    Contextual Info: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


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    YG838C03R O-220F 500ns, YG838C04R 30A high speed diode PDF

    YG838C04R

    Contextual Info: YG838C04R 30A (40V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


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    YG838C04R O-220F 500ns, YG838C04R PDF

    Contextual Info: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.


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    ISL9R3060G2 PDF

    Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is


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    RURG3060 PDF

    Contextual Info: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current


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    ISL9R3060G2 102ns AEC-Q101 PDF

    Contextual Info: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


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    RURG3060CC RURG3060 PDF

    Contextual Info: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride


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    RHRG3060 PDF

    Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


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    RURG3060 PDF

    F30S60S

    Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial


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    FFH30S60S FFH30S60S F30S60S PDF

    Contextual Info: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


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    FGA30N120FTD FGA30N120FTD PDF

    Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


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    FGH30N120FTD FGH30N120FTD PDF

    Schottky 30A 40v

    Contextual Info: http://www.fujisemi.com MS838C04 40V/30A FUJI Diode Schottky Barrier Diode Features • Low VF • Super high speed switching • High reliability by planer design Outline Drawings [mm] Connection diagram TFP 838C04 838C04 Applications • High speed power switching


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    MS838C04 0V/30A) 838C04 Schottky 30A 40v PDF

    F30S60S

    Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


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    FFP30S60S FFP30S60S F30S60S PDF

    30A high speed diode

    Abstract: TS808C06
    Contextual Info: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics


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    TS808C06 500ns, 30A high speed diode TS808C06 PDF

    30A high speed diode

    Abstract: TS808C04
    Contextual Info: _ TS808C04 30A SCHOTTKY BARRIER DIODE • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics


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    TS808C04 500ns, 30A high speed diode TS808C04 PDF

    F30S60S

    Abstract: FFH30S60STU F30S60 FFH30S60S
    Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


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    FFH30S60S FFH30S60S F30S60S FFH30S60STU F30S60 PDF

    F30S60S

    Abstract: FFP30S60S FFP30S60STU F30S60
    Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


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    FFP30S60S FFP30S60S F30S60S FFP30S60STU F30S60 PDF

    ESAD83M-004

    Contextual Info: ESAD83M-004 30A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design I Applications High speed power switching ■ Maximum Ratings & Characteristics


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    ESAD83M-004 500ns, ESAD83M-004 PDF

    Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


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    TS808C06 500ns, PDF

    F30S60S

    Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


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    FFP30S60S FFP30S60S F30S60S PDF

    Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


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    TS808C04 500ns, PDF

    Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


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    TS808C04 500ns, 25ature PDF

    Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


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    TS808C04 500ns, PDF