3052 MOSFET Search Results

A2730

Abstract: 64205 3052 mosfet
Contextual Info: SPICE Device Model SiE816DF Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

LC5523F

Abstract: 3052 voltage regulator
Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup

3052 voltage regulator

Abstract: LC5523F SANKEN 3052 "Sanken Rectifiers"
Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup

GX-0300-55

Abstract: LTD M250 B07T MRF373R1 MRF373SR1 NI-360S NI-360
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these

S-82057

Abstract: A2730
Contextual Info: SPICE Device Model SiE816DF Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

thermistor r5t

Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Contextual Info: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

MOSFET J132

Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
Contextual Info: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

c19a

Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Contextual Info: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

MRF373

Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Contextual Info: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

MRF373R1

Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these

Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

AN 7062

Abstract: LC5523F
Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

Contextual Info: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit

Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit

AN 7062

Abstract: 3052 voltage regulator TO220F-7
Contextual Info: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

LC5523

Abstract: LC550
Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

3052 voltage regulator

Contextual Info: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit

TO220F-7

Contextual Info: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

Contextual Info: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit

AN 7062

Contextual Info: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during

irl120

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

Contextual Info: LC5540LF Series Single-Stage Power Factor Corrected Off-Line Switching Regulator ICs Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup