304BIT Search Results

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

Contextual Info: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1

44-800-p

Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Contextual Info: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8

TMS44410

Abstract: TMS44410-70
Contextual Info: TMS44410 1 048 576-WORD BY 4-BIT WRITE-PER-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A - • Organization . . . 1 048 576 x 4 SMHS441 JANUARY 1991 DM and DJ Packaget Top View • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges: ACCESS ACCESS ACCESS

rfid xrag2

Abstract: pulse interval encoding EPCglobal TM 1628 Datasheet 432-bit
Contextual Info: XRAG2 – RFID UHF chip EPCglobal Class 1, Generation 2 compliant Using it’s extensive experience in UHF Electronic Product Code EPC TM Generation 1, STMicroelectronics has developed the XRAG2 – an innovative EPC Class 1, Generation 2 compliant device.

TMS44101

Contextual Info: TMS44101 4194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMHS411 — JA N U A R Y 1991 Organization . . . 4 194 304 x DC w C RAS C 1 1 ^ 2 3 Z 4 NC A 10 C 5 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A0 C 9 A1 C 10 A2 C 11 READ ACCESS ACCESS ACCESS

TMS44400

Abstract: TMS44400-10
Contextual Info: TMS44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY R E V A — S M H S 4 4 0 B — O C T O B E R 1 9 8 9 — R E V IS E D J A N U A R Y 1991 DM AND DJ P acka ge st Top View This Data Sheet Is Applicable to A ll TMS44400s Symbolized With Revision “B" and Subsequent

uhf modulator SSB ASK, PR ASK

Abstract: rfid preamble RFID tag eeprom TAG 90 RFID reader passive rfid reader 915MHZ 18000-6C history of rfid pulse code interval encoding RFID LF
Contextual Info: XRAG2 432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, Contactless memory chip with User Memory Features • EPCglobal class 1 generation 2 RFID UHF specification revision 1.0.9 ■ Passive Operation (no battery required) ■ UHF Carrier Frequencies from 860MHz to

27pc240

Abstract: 27C240 texas instruments PC240-12 TMS27C240 TMS27PC240
Contextual Info: TMS27C240 262144 BY 16-BIT UV ERASABLE TMS27PC240 262144 BY 16-BIT PROGRAMMABLE READ-ONLY MEMORIES SMLS240D– NOVEMBER 1990 – REVISED SEPTEMBER 1997 D D D D D D D D D TMS27PC240 FN PACKAGE TOP VIEW DQ13 DQ14 DQ15 E V PP NC V CC A17 A16 A15 A14 Organization . . . 262 144 by 16 Bits

Contextual Info: TMS45160, TMS45160P 262ā144ĆWORD BY 16ĆBIT HIGHĆSPEED DYNAMIC RANDOMĆACCESS MEMORIES SMHS160D − AUGUST 1992 − REVISED JUNE 1995 D D D DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D” and subsequent

T28F400

Abstract: intel 28F400bx E28F400BX-B60 interfacing of memory devices with 80286 microprocessor 80286 internal architecture 28F004BX-B 28F004BX-T 28F400BX-B 28F400BX-T E28F400BX-T60
Contextual Info: 4-MBIT 256K X 16 512K X 8 BOOT BLOCK FLASH MEMORY FAMILY 28F400BX-T B 28F004BX-T B Y x8 x16 Input Output Architecture 28F400BX-T 28F400BX-B For High Performance and High Integration 16-bit and 32-bit CPUs Y Very High-Performance Read 60 80 120 ns Maximum Access Time

SMHS562C

Abstract: R-PDSO-G20 Package pwr TMS44400 TMS44400P TMS46400 TMS46400P 4X400
Contextual Info: TMS44400, TMS44400P, TMS46400, TMS46400P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS562C – MAY 1995 – REVISED NOVEMBER 1996 D D D D D D D D Organization . . . 1 048 576 x 4 Single 5-V Power Supply for TMS44400 / P ± 10% Tolerance Single 3.3-V Power Supply for TMS46400 / P

ic 4194 notes with IC diagram

Abstract: RAS24
Contextual Info: SMJ417400 4 194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS044-NQVEMBER 1992 Organization . . . 4 194 304 FNC PA C K A G Et 4 x TO P V IE W Single 5-V Power Supply (10% Tolerance) VCC D NC W RAS A11 Performance Ranges: READ ACCESS AC CESS ACCESS

SRAM flatpack

Abstract: MIL-PRF38535 SMJ684002
Contextual Info: Fact Sheet M I l I t a r y S e m I c o n d u c t o r P r o d u c t s SMJ684002/5962-95600 SGYV025 October, 1996 512K–WORD x 8–BIT FAST STATIC RAM SRAM HIGHLIGHTS The SMJ684002 is a 4 194 304-bit CMOS static random-access memory (SRAM), organized as 524 288-words of 8-bits. This device is equipped with chip enable (CE) and output enable (OE)

rfid preamble

Abstract: rfid xrag2 chip antenna rfid UHF 18000-6C UHF rfid antenna UHF RFID READER CRC16 EPCglobal pulse interval encoding
Contextual Info: XRAG2 432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory Features • EPCglobal class 1 generation 2 RFID UHF specification revision 1.0.9 ■ Passive operation (no battery required) ■ UHF carrier frequencies from 860 MHz to

EPC gen2

Abstract: pulse interval encoding rfid xrag2 RFID pulse interval encoding EPCglobal
Contextual Info: XRAG2 – RFID UHF chip EPCglobal Class 1, based on EPC Gen2 specification Using it’s extensive experience in UHF Electronic Product Code EPC TM Generation 1, STMicroelectronics has developed the XRAG2 – an innovative EPC Class 1 device based on EPC Gen2 specification.

31D0

Contextual Info: SMJ44100 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS040D – JANUARY 1991 – REVISED JUNE 1995 D D D D Processed to MIL-STD-883, Class B Organization . . . 4 194304 x 1 Single 5-V Power Supply ±10% Tolerance Performance Ranges: SMJ44100-80

SMJ44400

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D – JANUARY 1991 – REVISED JUNE 1995 D D D D D D D D D D D D D Processed to MIL-STD-883, Class B Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges:

lm 4194

Contextual Info: TMS27C040 4194 304-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC040 4194 304-BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO4OD-NOVEMBER 1990-REVISED JANUARY 1993 TMS27C040 J PACKAGE+ TOP VIEW Organization . . . 512K x 8 Single 5-V Power Supply Industry Standard 32-Pin Dual In-Line

Contextual Info: SMJ44100 4194 304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS040B-JANUARY 1991-REVISED JULY 1991 JD PACKAGET TOP VIEW Processed to MIL-STD-883, Class B Military Temperature Range. . . -5 5 °C to 125°C D C w C Organization . . . 4 194 304 x 1 Performance Ranges:

Contextual Info: TMS27C040 4 194 304-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC040 4194 304-BIT PROGRAMMABLE READ-ONLY MEMORY SMLSQ40 - NOVEMBER 1990 TM S 2 7 C 0 4 0 Organization . . . 512K x 8 J Package Top View Industry Standard 32-Pin Dual-In-line Package and 32-Lead Plastic Chip Carrier

Contextual Info: TMS46100, TMS46100P 4194 304-WORD BY 1-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMHS461-DECEMBER 1992 ACCESS ACCESS ACCESS TIME ‘ RAC (MAX) TMS46100/P-70 * * * * * * * * READ TIME TIME OR WRITE (tCAC) (MAX) (tAA) (MAX) CYCLE (MIN) 130 ns 70 ns 18 ns

Contextual Info: TMS46400, TMS46400P 1 048 576-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMHS464-JANUARY 1993 SD PACKAGEt TOP VIEW DJ PACKAGEt (TOP VIEW) Single 3.3-V Power Supply (±0.3-V Tolerance) DQ1 C Low Power Dissipation (TMS46400P) - 200 mA CMOS Standby