3016* INTEL Search Results

Contextual Info: M39003/03-3016 aka M39003/03-3016 T242A685K010CS CSR23C685KC Capacitor, tantalum, 6.8 uF, +/-10% Tol, 10V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 3.43 7.26 10.72 0.51 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer: Value:

Contextual Info: KEMET Part Number: M39003/09-3016 M39003/09-3016, T262C127J010CS, CSR21C127JC Capacitor, tantalum, 120 uF, +/-5% Tol, 10V@85C General Information Manufacturer: Miscellaneous Electrical: KEMET Max Ripple Current @25C @40KHz = 3.2 amps Electrical Specifications

Contextual Info: M39003/01-3016 aka M39003/01-3016 T212C476M020SS CSR13E476MS Capacitor, tantalum, 47 uF, +/-20% Tol, 20V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 7.34 17.42 20.88 0.64 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer: Value:

Contextual Info: M39003/06-3016 aka M39003/06-3016 T252A685K010CS CSR33C685KC Capacitor, tantalum, 6.8 uF, +/-10% Tol, 10V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 3.43 7.26 10.72 0.51 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer: Value:

Contextual Info: fax id: 3016 CYPRESS PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure w in­

Contextual Info: EmberZNet 4.7.2 API Reference: For the EM250 SoC Platform December 18, 2012 120-3016-000-4720 Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel:1+ 512 416-8500 Fax:1+(512) 416-9669 Toll Free:1+(877) 444-3032 www.silabs.com Disclaimer The information in this document is believed to be accurate in all respects at the time

c271a

Abstract: CY7C271A
Contextual Info: fax id: 3016 PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV

K74 (2 GATE)

Abstract: 330 j65 CY7C271A-35WC A9 pin contact CY7C271A PROMs
Contextual Info: fax id: 3016 1CY 7C27 1A PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV

CSI 24C

Abstract: 7C271 CY7C271A
Contextual Info: fax id: 3016 —— — Æ j r r ~ 'f V D I 1 PRELIMINARY D 17 Q Q IT C O O CY7C271A 32K x 8 Power Switched and Reprogrammable Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure w in­

lccp

Contextual Info: fax id: 3016 CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features m atica lly pow ers down into a low -pow er stan d-by mode. T he C Y 7 C 2 7 1 A is packaged in the 300-m il slim pa ckag e and is available in a cerD IP pa ckag e eq uipped w ith an era sure w in ­

7C271

Abstract: CY7C271A
Contextual Info: fax id: 3016 —— — Æ r ~ 'f V D D I 1 IT C O O j r 1 7 Q PRELIMINARY Q CY7C271A 32K x 8 Power Switched and Reprogrammable Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure w in­

Intel 82430

Abstract: IDT70825
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

block DIAGRAM OF random access memory

Abstract: Intel 82430 IDT70825 8kx16bit
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K x 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Intel 82430

Abstract: IDT70825
Contextual Info: HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM IDT70825S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random Access from the other port

Intel 82430

Abstract: IDT70825 IDT70825L IDT70825S IDT70825PF 70825
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70825 IDT70825L IDT70825S
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.) Standby: 5mW (typ.) – IDT70825L

IDT70825

Abstract: IDT70825L IDT70825S
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) • Low-power operation

Intel 82430

Abstract: IDT70825 70825
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K x 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Intel 82430

Abstract: IDT70825 IDT70825L IDT70825S
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.) Standby: 5mW (typ.) – IDT70825L

IDT70825

Abstract: IDT70825L IDT70825S ym 3016
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

Contextual Info: I: HIGH SPEED 128K 8K x 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The ID T70825 is a high-speed 8K x 16bit Sequential Access Random Access Memory (SARAM). The SARAM

Contextual Info: \ S ÏN â HIGH SPEED 128K 8K X 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) y Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random