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30-1/B4C-AKNB
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EVERLIGHT
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LED Indication - Discrete, Optoelectronics, LED PWR 3MM INGAN BLUE WATER CLR |
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JMTL2301B
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -20V drain-source voltage, -2.5A continuous drain current, and RDS(on) less than 104mΩ at VGS=-4.5V, available in SOT-23 package. |
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ESD0301BL
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Shikues Semiconductor
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Low-capacitance TVS for ESD protection, 0.5pF, IEC 61000-4-2/4-4, ultra-small DFN1006 package, protects high-speed data lines. |
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SMF301B
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SUNMATE electronic Co., LTD
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3.0A surface mount fast recovery rectifier diode with 50V to 1000V reverse voltage range, low forward voltage drop, glass passivated die, and SMA/DO-214AA package for high efficiency applications. |
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DIO7301B
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Dioo Microcircuits Co Ltd
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5.5V rated 2A load switch with 48mΩ N-MOSFET, 1.8V to 5.5V operation, soft-start control, reverse current blocking, and up to 5A peak current capability in SOT23-5 package. |
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WSDY3301B
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Winsemi Microelectronics
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Single-cell lithium-ion/polymer battery protection IC with integrated 55 mΩ MOSFET, overcharge and overdischarge protection, overcurrent and short-circuit detection, 0.9 uA operating current, and SOT23-5L package. |
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AK2301B
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK2301B with -20V drain-source voltage, -2.6A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, low gate charge, and 1.8V gate drive capability, housed in SOT-23 surface mount package. |
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HSS2301B
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Huashuo Semiconductor
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P-Ch 20V Fast Switching MOSFET with -3A continuous drain current, 89 mΩ typical RDS(ON) at VGS = -4.5V, featuring low gate charge and high cell density trench technology for efficient small power switching applications. |
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SI2301BDS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 0.035 ohm at VGS = -10V, featuring trench technology and suitable for load switches, PA switches, and DC/DC converters. |
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SMH301B
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SUNMATE electronic Co., LTD
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Surface mount ultra-fast rectifier diodes in SMB/DO-214AA package, 3.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated junction, designed for high-efficiency power rectification.Surface mount ultra fast rectifier diodes in SMB/DO-214AA package, 3.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated junction, 75ns maximum reverse recovery time. |
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NCE2301B
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2.6A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, and low gate charge suitable for load switch and PWM applications in SOT-23 package. |
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HFM301B
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SUNMATE electronic Co., LTD
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Surface mount high efficiency rectifier diodes in SMB package with 3.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, ultra-fast recovery time, low forward voltage drop, and glass passivated die construction. |
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JMTL2301B
