300V ZENER Search Results

SOT-23 MOSFET P-CHANNEL a1 1- mark

Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds

mark G1 SOT-23

Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

SOT-23 MOSFET P-CHANNEL a1 1- mark

Abstract: L21e
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

Contextual Info: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8  Built-in protection zener diode  RoHS compliant device

2Z30

Abstract: smny2z30
Contextual Info: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device

cmos 555 timer

Abstract: ir2151 IR51H737 PD6061
Contextual Info: International S Rectifier Data Sheet No. PD-6.061A IR51H737 SELF-OSCILLATING HALF-BRIDGE Features Product Summary Floating channel designed for bootstrap operation Fully operational to +300V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout

Y60NK30Z

Abstract: plasma tv schematic diagram Y60NK30 STY60NK30Z
Contextual Info: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STY60NK30Z

Abstract: Y60NK30Z Y60NK30 plasma tv circuit diagram plasma tv schematic diagram Zener Diodes 300v
Contextual Info: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

P7NK30Z

Abstract: p7nk F7NK30Z STP7NK30Z ZENER diode 400V 5A STF7NK30Z JESD97
Contextual Info: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W

1W ZENER DIODE

Abstract: Zener Diodes 300v 12V, 1W zener diode 1W 12V ZENER DIODE zener diode 9,1v 0.5 w zener diode chip zener diode 1n4750a
Contextual Info: 1N47xxA SERIES 1W Zener Diode .034 034 0 (0.9 9) DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~300V VF 1.2V TJ max 150°C DO-41 Dimensions in inches and (millimeters) Mechaincal Data

P7NK30Z

Abstract: ZENER diode 400V 5A
Contextual Info: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W

heavy duty regulator

Abstract: thyristor 15KW SL1122 100A 200V thyristor THYRISTOR 5A 300V ZENER 14,5V
Contextual Info: product tree SILICON TECHNOLOGY GAS TUBE TECHNOLOGY T.V.S AVALANCHE PLASTIC ENCAPSULATED AXIAL 500W 600W 1.5KW ' 5KW " 2 TERMINAL MEDIUM DUTY 15KW T.V.S (AVALANCHE) SURFACE MOUNT : 90V 145V ’ 230V : 260V 350V 2 TERMINAL HEAVY DUTY 10A/1 OKA 230V 260V 300V

VB027SP

Contextual Info: VB027SP HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027SP Vcl 300V Icl 9A Id on 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT

P7NK30Z

Abstract: F7NK30Z p7nk STF7NK30Z STP7NK30Z
Contextual Info: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A - TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω

Zener Diodes 300v

Abstract: gate-source zener STL9NK30Z
Contextual Info: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

Ignition Driver IC

Abstract: advance ignition ignition coil VB027SP
Contextual Info: VB027SP  HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027SP Vcl 300V Icl 9A Id on 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT

STL9NK30Z

Contextual Info: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

Contextual Info: STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK30Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID (1) Pw (1) 300 V < 0.4 Ω 9A 90 W TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

rtv 157

Contextual Info: Data Sheet No. PD-6.057D IR51H737 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

555 TIMER IC PARAMETERS

Abstract: Zener Diodes 300v IR51HD737 IR2151 IR51H737 IC 555 Internal block diagram
Contextual Info: Data Sheet No. PD-6.057D IR51HD737 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

sa1 Zener diode

Abstract: diode 300v Scans-009514 2SD2323 igniter
Contextual Info: HITACHI 2SD2323-Silicon NPN Triple Diffused High Voltage Switching, Igniter Feature TO-220FM * B uilt-in H ig h voltage zener diode 300V • High speed sw itching Absolute M axim um Ratings (Ta = 25°C) Item S ym bo l H ating Unit C o lle cto r to base voltage

kx ignition circuit diagram

Abstract: VB027SP HIGH ENERGY IGNITION CIRCUIT
Contextual Info: VB027SP HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027SP Vcl 300V Icl 9A Id on 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT

L9NK30Z

Contextual Info: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

zener diode 54A

Abstract: Zener Diodes 300v STW54NK30Z W54NK30Z
Contextual Info: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY