300F DIODES Search Results

Contextual Info: MV8303C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage18 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C

Contextual Info: MS4540B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.40G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePin

Contextual Info: MA48707A166 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS

Contextual Info: VSE32W Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage18 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: MA48707A168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: DC4141J02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.80G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: DC4141F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: HSMS2850L30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage2.0 BandC Test Freq5.8G Frequency Min. (Hz)915M Frequency Max. (Hz)5.8G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.300f Minimum Figure of Merit

Contextual Info: MA46600-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: DC4151F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: MA46600-168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin

Contextual Info: MS4500A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.20G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: DC4141J01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.80G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: DC4141F02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

300f diode

Contextual Info: HSMS2850T30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage2.0 BandC Test Freq5.8G Frequency Min. (Hz)915M Frequency Max. (Hz)5.8G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.300f Minimum Figure of Merit

Contextual Info: MA4357B1 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.70G P(D) Max. (W)0.5 Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: MV8303A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C

Contextual Info: MA4P102-186 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 50 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.0 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.300f Carrier Lifetime (S)20n @I(F) (test) (A) @I(R) (A) (Test Condition)10m

Contextual Info: MPN4166A15 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.300fò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m

Contextual Info: MPN4165A15 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.300fò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m

Contextual Info: silìJllCllii Ifrm s V rsm V rrm SEMI PACK Fast Diode 1 Modules maximum values for continuous operation) 450 A IpAv (sin. 180; T case = 85 °C; 50 Hz 290 A 1600 S K K E 330 F 16 1700 S K K E 330 F 17 Symbol Conditions If d c If d c If d c If s m i2t Q rr

DIN7985

Abstract: semibox DIN-7985 31949100 DIN7985-4 300f diodes C664
Contextual Info: IFRMS maximum value for continuous operation, Tcase = 25 °C 664 A V IFAV (sin 180; Tcase = 85 °C; 50 Hz) 423 A SKKE 600 F 1000 SKKE 600 F 10 Preliminary Data 1200 SKKE 600 F 12 Symbol Conditions SKKE 600 F IFDC IFDC IFDC Tcase = 62 °C Tcase = 80 °C Tamb = 45 °C; Rthha = 0,05 °C/W

Contextual Info: silìJllCllii If r m s V rs m V rrm SEMIPACK Fast Diode 1 Modules maximum values for continuous operation) 450 A IpAv (sin. 180; T case = 85 °C; 50 Hz 290 A 1000 SKKE 600 F 10 1200 SKKE 600 F 12 Symbol Conditions If d c If d c If d c Tease = 92 °C T amb = 45 °C; Rthha = 0,05 °C/W

MIL-STD-883H

Contextual Info: iC-WJB 2 .7 V LASER DIODE DRIVER F ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ E A T U R E S _ _ LD driver for continuous or pulsed operation CW to 300kHz o f up to 250mA Average control of laser power Simple LD power adjustment via external resistor