300F DIODES Search Results
300F DIODES Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
| MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
| CEZ6V8 |
|
Zener Diode, 6.8 V, ESC | Datasheet |
300F DIODES Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MV8303C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage18 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C |
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MV8303C Voltage18 | |
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Contextual Info: MS4540B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.40G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePin |
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MS4540B Voltage120 | |
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Contextual Info: MA48707A166 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS |
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MA48707A166 Voltage25 | |
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Contextual Info: 4041-11-00 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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Voltage60 | |
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Contextual Info: VSE32W Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage18 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS |
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VSE32W Voltage18 | |
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Contextual Info: MA48707A168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS |
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MA48707A168 Voltage25 | |
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Contextual Info: DC4141J02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.80G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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DC4141J02 Voltage60 | |
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Contextual Info: DC4141F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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DC4141F01 Voltage60 | |
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Contextual Info: HSMS2850L30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage2.0 BandC Test Freq5.8G Frequency Min. (Hz)915M Frequency Max. (Hz)5.8G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.300f Minimum Figure of Merit |
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HSMS2850L30 | |
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Contextual Info: D5146H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage5.5 Q Factor Min. f(co) Min. (Hz) Cut-off freq.180G P(D) Max. (W)300m Semiconductor MaterialSilicon Package StylePill-B |
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D5146H | |
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Contextual Info: MA46600-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E |
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MA46600-186 Voltage30 | |
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Contextual Info: DC4151F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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DC4151F01 Voltage90 | |
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Contextual Info: MA46600-168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin |
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MA46600-168 Voltage30 | |
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Contextual Info: MS4500A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.20G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePin Mounting StyleS |
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MS4500A Voltage30 | |
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300f diodeContextual Info: 4041-11-02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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Voltage60 300f diode | |
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Contextual Info: DC4141J01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.80G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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DC4141J01 Voltage60 | |
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Contextual Info: DC4141F02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A |
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DC4141F02 Voltage60 | |
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Contextual Info: MV8303D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C |
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MV8303D Voltage30 | |
300f diodeContextual Info: HSMS2850T30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage2.0 BandC Test Freq5.8G Frequency Min. (Hz)915M Frequency Max. (Hz)5.8G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.300f Minimum Figure of Merit |
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HSMS2850T30 300f diode | |
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Contextual Info: MA4357B1 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.70G P(D) Max. (W)0.5 Semiconductor MaterialSilicon Package StylePill-C |
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MA4357B1 Voltage90 | |
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Contextual Info: MV8303A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C |
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MV8303A | |
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Contextual Info: MA4P102-186 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 50 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.0 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.300f Carrier Lifetime (S)20n @I(F) (test) (A) @I(R) (A) (Test Condition)10m |
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MA4P102-186 | |
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Contextual Info: MPN4166A15 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.300fò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m |
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MPN4166A15 | |
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Contextual Info: MPN4165A15 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.300fò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m |
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MPN4165A15 | |