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    3007N Search Results

    3007N Datasheets (2)

    JCET Group
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 3DD13007N36F
    		JCET Group NPN transistor in TO-220F package, rated for 400V collector-emitter voltage, 8A continuous collector current, with a DC current gain of 10 to 40 and collector power dissipation of 2W. Original PDF
    badge 3DD13007N36
    		JCET Group NPN transistor in TO-220-3L package, rated for 400V collector-emitter voltage, 8A continuous collector current, 2W power dissipation, with a DC current gain (hFE) from 10 to 40 and transition frequency of 4MHz. Original PDF
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    Amphenol PCD M85049-130-07N

    GASKET BLACK NEOPRENE FOR 5015 C
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    DigiKey M85049-130-07N Bag 2 1
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    Schneider Electric VLSS3007N

    300MM LENGTH 7MM SHAFT
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    Mouser Electronics VLSS3007N
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    RS VLSS3007N Bulk 3 1 Weeks 1
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    NXP Semiconductors MMG3007NT1

    IC AMP CELLULAR 0HZ-6GHZ SOT89-4
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    Vyrian MMG3007NT1 3,117
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    CTS Corporation CA50C3007NMT

    XTAL OSC XO 30.0000MHZ HCMOS TTL
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    CTS Corporation CA20C3007NNR

    XTAL OSC XO 30.0000MHZ HCMOS TTL
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    3007N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APM3007N

    Abstract: A102 J-STD-020A
    Contextual Info: 3007N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V / 80A , RDS ON = 5.5mΩ(typ.) @ VGS= 10V RDS(ON)= 8.5mΩ(typ.) @ VGS= 4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-220 , TO-252 and TO-263 Packages


    Original     		APM3007N O-220 O-252 O-263 O-220, O-263 3007N APM3007N A102 J-STD-020A PDF

    Contextual Info: 3007NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/40A , RDS ON =5.5mΩ(typ.) @ VGS=10V RDS(ON)=8.5mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		APM3007NU 0V/40A O-252 3007N PDF