300 B Search Results

Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN Type No. 'CBO VOBO V ECO VEBO (V) (V) (V) (PA) Min Min Min Max 300 2SC2068 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0 CSC2621 300 300

B0815

Abstract: csc2821c bd817 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C B O V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 2SC2068Y 300 300 5.0 1.0 120 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0 CSC2621

bd817

Abstract: B0815 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611 CSC2621
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C BO V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 240 2SC2068Y 300 300 5.0 1.0 240 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0

CA8056-06-0017

Abstract: CA8056-06-0014 C-300-S-116 C300S C300D C-300-S-124 DC300D B389 C-300-S C-300-S-122
Contextual Info: C-300-S Slide Catalog Number C-300-S-110 C-300-S-112 C-300-S-114 C-300-S-116 C-300-S-118 C-300-S-120 C-300-S-122 C-300-S-124 C-300-S-126 C-300-S-128 C-300-S-130 A B C 10.00 12.00 14.00 16.00 18.00 20.00 22.00 24.00 26.00 28.00 30.00 9.25 9.25 13.25 13.25 13.25

60MT120K

Abstract: 160MT140K 60MT80K 60MT160K 70MT120K 36MT160 160MT80K 70MT100 80771 diode b13 950
Contextual Info: I n t e r n a t io n a l R e c t if ie r 1 Bridges Part Numb« VRRM V •o W TC •c (B) RthJCDC K/W (V) (A) <FSM(2) SCHx GOHz (A) 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 300 300 300 300 300 300 300 300 300 300 400 400 400 400 400 400

P1189

Abstract: Q62702-P3586 GEOY6652 Q62702-P1189 Q62702-P1193
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300 und bei 880 nm (SFH 300 FA) • Hohe Linearität

KBPC3504

Abstract: KBPC35005 KBPC3502 KBPC3506 KBPC3510
Contextual Info: Bridge Rectifiers V TYPE NO. KBPC35005 KBPC350I KBPC3502 KBPC3504 KBPC3506 KBPC350Ì3 KBPC3510 RRM V 50 100 200 400 600 800 1000 V rms O (V) (A) 35 70 140 280 420 560 700 35 35 35 35 35 35 35 ' fsm ( C) 55 55 55 55 55 55 55 (A) 300 300 300 300 300 300 300

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm SFH 300 und bei 880 nm (SFH 300 FA)

AE 1350.500

Abstract: Rittal 1380 940-860 Rittal Rittal 1076.500 940-160 1032.500 st 1019 st 1034 ST 1076
Contextual Info: Schaltschrank-Systeme 1.2 Kompakt-Schaltschränke AE Abmessungen mm Breite Best.-Nr. AE Seite Best.-Nr. AE Höhe Tiefe Stahlblech 200 300 120 1032.500 118 – 200 300 155 1035.500 118 1002.600 A 300 300 210 1033.500 118 – 1. 300 380 210 – 300 400 210 1034.500

2n2222 h 331 transistors

Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300

Q62702P3586

Abstract: GEOY6652 OHLY0598 Q62702-P1193
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm (SFH 300) und bei 880 nm (SFH 300 FA)

1730300000

Abstract: 995166
Contextual Info: LP 5.08 Series Printed Circuit Board Terminals / 5.08 mm Pitch Technical data VDE UL CSA Technical data VDE 1 il UL CSA Technical data VDE UL CSA Rated voltage V 250* 300 300 Rated voltage (V) 250* 300 300 Rated voltage (V) 250* 300 300 Rated current (A)

GEOY6652

Abstract: OHLY0598 Q62702-P1193 Q62702P3586
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm (SFH 300) und bei 880 nm (SFH 300 FA)

Contextual Info: Telecom Protection Products Telpower high-current switch Catalog Numbers – Switches Pullout and Base Amp Rating 70-250 70-250 70-250 70-250 70-250 70-250 300-800 300-800 300-800 300-800 300-800 300-800 Catalog Numbers – Components Catalog Numbers TPHCS250-P

k 4110

Abstract: CIE1931
Contextual Info: Yokohama Electron Application Note Red Magic White - RMW Shadow Pled component Red Magic White YBBT34RMW-7400*K bluex2chip:If/chip 350 300 250 200 150 100 350 300 250 200 150 100 350 300 250 200 150 100 350 300 250 200 150 100 350 300 250 200 150 100 350 300

EN-60825-1

Contextual Info: 3mm LED CBI Circuit Board Indicator Bi-level 553-xxxx-300 PART NO. 8.76 [.345] 5.08 [.200] HIGH EFFICIENCY - LED TYPE 01 553-0111-300 553-0122-300 553-0133-300 553-0177-300 553-0188-300 2.9 [.115] 5.08 [.200] 9.65 [.380] 2.54 [.100] CATHODE Red/Yel Cathode for

J801

Abstract: U300C EHF-120-01-L-D U300B u300a u212 R529 xc3s500e-4pqg208c R622 R508
Contextual Info: 1 2 3 4 5 6 8 7 D V460A-300 LevelShifter V460A-300 LevelShifter.Sch D V460A-300 FPGA V460A-300 FPGA.Sch V460A-300 FPGA Config Power V460A-300 FPGA Config Power.Sch V460A-300 APIX0 V460A-300 APIX0.Sch C C V460A-300 APIX1 V460A-300 APIX1.Sch V460A-300 Conn Top

Q62702-P3586

Abstract: Q62702-P85-S3 Q62702-P85-S4 GEO06652 Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1193 42CHIP
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300 und bei 880 nm (SFH 300 FA) • Hohe Linearität • 5 mm-Plastikbauform im LED-Gehäuse

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300 und bei 880 nm (SFH 300 FA) • Hohe Linearität • 5 mm-Plastikbauform im LED-Gehäuse

Westcode uk

Abstract: Westcode Semiconductors 300-06DA 600V
Contextual Info: MEA 300-06 DA, 600V MEK 300-06 DA, 600V MEE 300-06 DA, 600V Page 1 of 2 WESTCODE WWW: http://www.westcode.com Issue 1 : 11/99 MEA 300-06 DA, 600V MEK 300-06 DA, 600V MEE 300-06 DA, 600V WESTCODE UK: Westcode Semiconductors Ltd P O Box 57 Chippenham Wiltshire England SN15 1JL

Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2

X100M

Abstract: laser diode bare chip
Contextual Info: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm

EK950

Abstract: EK950V-XXP DGWG10V1-XX-ON
Contextual Info: BlockMaster - LMI Cross Reference LMI Series 105 500 106 500 108 500 145 200 155 200 186 200 189 200 202 200 243 200 245 300 245 600 246 300 246 600 253 100 253 300 255 100-01 255 300-01 255 600 255 700 256 100-01 256 300-01 258 100-01 258 300-01 9 102 100

Bridge Rectifiers

Contextual Info: BRIDGE RECTIFIERS VF Volts *R (uA) ! Tc . <x j > IFai CA) NOTES : I."*" 1.1 1.1 1.1 1.1 1.1 1.1 10 10 10 10 10 10 55 55 55 55 55 55 300 300 300 300 300 300 : UL Recognized 2.Operating temperature -55*C to +125*C 3.Storage temperature -55*C to + 150*C 4.Tc @ Rated forward current