300 01 DIODE Search Results

BYV 200

Abstract: BYV 35 byv ultra Fast Recovery Rectifier
Contextual Info: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0

SID01-03

Abstract: SIE01-01
Contextual Info: —K / Rectifier Diodes —K Power Diodes 9 -2 5 0 A st 150 300 450 600 900 900 1350 SID01-12 1200 1800 ERD51-01 ERD51-03 ERD51-06 ERD51-09 ERD51-12 100 150 300 450 SIE01-01 SIE01-03 SIE01-06 SIE01-09 SIE01-12 ERE51-01 ERE51-03 ERE51-06 ERE51-09 ERE51-12 SIG01-01

BZX84 X8

Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
Contextual Info: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage

ABB IGBT

Abstract: TF PTC 0300U120 5SNS 0300U120100
Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1528-01 Jan. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

mj 340

Abstract: 5SNS 0300U120100 5SNS0300U120100
Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

322CNQ

Abstract: 322CNQ030
Contextual Info: Preliminary Data Sheet PD-2.550 01/98 322CNQ030 300 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 322CNQ030 Units 300 A 30 V 150 °C TJ operation 10,000 A High Surge Capability Center tap module

303CNQ

Abstract: 303CNQ080 303CNQ100 IRFP460
Contextual Info: Bulletin PD-2.234 rev. D 07/01 303CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 303CNQ. Units 300 A 80 to 100 V 22,000 A 175 °C TJ operation Center tap module

diode KE

Abstract: 274 transistor KE-01 diode KE 01 DATASHEET SCR ke on module scr scr datasheet igbt scr applications
Contextual Info: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations

KE DIODE ON

Abstract: diode KE KE-01 diode KE 01
Contextual Info: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations

marking of m7 diodes

Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

300CNQ

Abstract: 300CNQ035 300CNQ040 300CNQ045 20481
Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for

Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for

300CNQ

Abstract: 300CNQ035 300CNQ040 300CNQ045
Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for

transistor CB 945

Abstract: 8508901YX 8508902YX ELH0101 ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD
Contextual Info: Power Operational Amplifier Features General Description  5A peak 2A continuous output current  10 V ms slew rate  300 kHz power bandwidth  850 mW standby power g 15V supplies  300 pA input bias current  Virtually no crossover distortion  2 ms settling time to 0 01%

diode SMD MARKING CODE K6

Abstract: bzx 79 6v2 BZX 6v8 part marking b36 smd diode smd diode marking code d7 SMD CODE M8 smd marking m4 DIODE smd marking N7 bzx 29 C18 BZX384-C5V1/D5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product specification Supersedes data of 2003 Apr 01 2004 Mar 22 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

1N4148

Abstract: 1N4150 1N4151 1N4448 1n4148 die
Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 Silicon Planar Diodes Silizium-Planar-Dioden Version 2004-10-01 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35

m7 smd diodes NXP

Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

D240LG40

Contextual Info: Super Fast Recovery Diodes High frequency rectifying Absolute Maximum Ratings Electrical Characteristics Vf Type No. D5LC20U 40 V rm lo [V ] [A ] 200 400 D5LD2QU 200 D5LC20UR 200 DE5LC20U 200 40 SF5LC20U 400 300 40 D8LC20U 400 20UR 40 D8LD20U 40 01ÖLC20U

Contextual Info: Data Sheet, Doc. No. 5SYA 1687-01 11 06 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

3375K

Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS0300U120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1528-01 July 00 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

CM23

Abstract: laser diode 1550nm single mode laser diode 1550 nm coaxial laser diode 1550 nm
Contextual Info: 1550nm LASER DIODE PIGTAILED MODULE 300-0052-01 Features • Laser diode with multi-quantum-well structure • Uncooled operation at –40°C to 85°C • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Pigtailed module with single mode fiber

Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS0300U121100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1529-01 July 00 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact package

STR-S6707 circuit diagram

Abstract: 3122v triac STR-S6707 3122V 3052V STR-S6708 STRS6709 str-s6709 STR83145 STR-S6707 diagram
Contextual Info: POWER CONVERSION/POWER MANAGEMENT 01 AND 03 SURFACE-MOUNT SWITCHING REGULATORS Features • Requires Only Four External Components Part Characteristics @ IO = 300 mA Overcurrent Number VO V Efficiency (%) Protection ■ Output Voltage Adjustment and Internal Feedback Compensation