300 01 DIODE Search Results

mj 340

Abstract: 5SNS 0300U120100 5SNS0300U120100
Contextual Info: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

marking of m7 diodes

Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

300CNQ

Abstract: 300CNQ035 300CNQ040 300CNQ045 20481
Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for

Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for

322CN

Contextual Info: I , I Preliminary Data Sheet PD-2.550 01/98 IÖ R Rectifier 322CNQ030 In te rn a tio n a l 300 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics lF AV Rectangular D escription/Features 322CNQ030 Units 300 A 30 V 1 0,000 A • Center tap module

diode SMD MARKING CODE K6

Abstract: bzx 79 6v2 BZX 6v8 part marking b36 smd diode smd diode marking code d7 SMD CODE M8 smd marking m4 DIODE smd marking N7 bzx 29 C18 BZX384-C5V1/D5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product specification Supersedes data of 2003 Apr 01 2004 Mar 22 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

m7 smd diodes NXP

Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

STR-S6707 circuit diagram

Abstract: 3122v triac STR-S6707 3122V 3052V STR-S6708 STRS6709 str-s6709 STR83145 STR-S6707 diagram
Contextual Info: POWER CONVERSION/POWER MANAGEMENT 01 AND 03 SURFACE-MOUNT SWITCHING REGULATORS Features • Requires Only Four External Components Part Characteristics @ IO = 300 mA Overcurrent Number VO V Efficiency (%) Protection ■ Output Voltage Adjustment and Internal Feedback Compensation

208CMQ060

Abstract: 301CNQ 301CNQ035 301CNQ040 301CNQ045 IRFP460
Contextual Info: Bulletin PD-2.177 rev. D 07/01 301CNQ. SERIES 300 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular The 301CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

66179-300

Abstract: 4N49
Contextual Info: 66179-300 GULL WING HERMETICALLY SEALED, SINGLE CHANNEL OPTOCOUPLER Electrical Equivalent To 66099 MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 01/23/2007 Features: Applications: • • • • • • • • • • Current transfer ratio: 150% typical 1000 Vdc isolation test voltage

Contextual Info: Bulletin PD-2.177 rev. D 07/01 301CNQ. SERIES 300 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular The 301CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

DIODE REDRESSEMENT

Abstract: 4116 esm diodes ESM diode esm 200 M771 DF451 Diodes de redressement df diode
Contextual Info: new fast recovery rectifier diodes > 100 A nouvelles diodes de redressement rapide ^ 100 A Types 2 5 0 A /T case = 80°C •o A Qr max (mC) Vr r m (V) lp = Tj = 125°C 451 451 451 451 451 451 451 451 01 02 04 06 08 10 12 14 * * * * * * 250 * * 300 A / Tcase = 65°C

AN10739

Abstract: LQH55D pnp transistor 313 smd SOT363 flash BC847BPN PBSS5220T PMEG2010EJ Led driver schematic sot23 TR3 discrete LED driver
Contextual Info: AN10739 Discrete LED driver Rev. 01 — 11 February 2009 Application note Document information Info Content Keywords LED, constant current source, buck converter Abstract This application note describes a 300 mA discrete LED driver, based on a buck-converter principle, with a cycle-by-cycle current control. It includes a

Contextual Info: ISOCOM C O Í I P O NE N T S 4886510 LTD ?SC D • 4 ñ ñb 51 D ODQDCHfl t»5E ■ ISOCOM IN C 75C 00098 ISO O T -V / -fö ICPL 2533 Dual LSTTLCompatible Opto Isolator PACKAGE DIMENSIONS IN INCHES MM 8 • ooo 7 r 01! 1 2 6 5 m 3 4 300(7 62i_ L:

THC-4413

Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic

1S4009

Abstract: 1S4007 1S4007A 1S4016A 1S401 1S4010 1S4180 1S4013A 1S4033A 1S4150A
Contextual Info: Diodes and Rectifiers Type No. Case Drawing No. W Max. Powet D issipation (V olts) Norn. Voltage ±5% (m A ) T e st C urrent (« ) Max. Slope Impedance at test current + ( % f C) Typ. Temp. Coefficient V oltage 1S4006A S016 CC 1-5 6-8 50 1-5 Regulators

BFS43

Abstract: BFS42 BFS44 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36 BFS36A BFS37A BFS38
Contextual Info: Micro-E Semiconductors for Hybrid Integrated Circuits Transistors and Diodes designed specifically for use w ith T hick and Thin Film Circuits. Features % High Thermal Dissipation 0 Transfer Moulded Construction 0 Tin Plated Leads # Surface Bonding 0 Double Ended Construction

6C12

Abstract: FF150R12KE3G
Contextual Info: Technische Information / technical information FF150R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

zener diode 47-10

Abstract: CD4106 CD4104 1N4099 1N4135 CD4099 CD4100 CD4101 CD4102 CD4103
Contextual Info: • 1N4099 THRU 1N4135 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135 CD4099

Contextual Info: I n ter n a tio n a l 1N4916 thru 1N4932A S e m ic o n d u c to r , I n c . TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 19.2 V O LT N O M IN A L ZEN ER V O LT A G E +/- 5% LOW NO ISE MAXIMUM RATINGS operating Temperature: storage Temperature: DC Power Dissipation:

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

zener diode 47-10

Abstract: 1N4099 1N4135 CD4099 CD4100 CD4101 CD4102 CD4103 CD4104 CD4105
Contextual Info: CD4099 • 1N4099 THRU 1N4135 AVAILABLE IN JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135

Contextual Info: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability

1N409

Abstract: cd 4560 D4126 4106C
Contextual Info: • 1N4099 THRU 1N4135 AVAILABLE IN CD4099 JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135