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3005-A-080-AL
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN ALUMIN |
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131.67MB |
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3005-A-080-AL-6
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFGOLD IRIDITE |
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131.67MB |
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3005-A-080-B
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN BRASS1 |
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131.67MB |
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3005-A-080-S
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN STEEL1 |
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131.67MB |
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3005-A-080-SS
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN STAINL |
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131.67MB |
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JMTK3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 100A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 4.4mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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JMTC3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 90A, 5.0mΩ N-channel Power Trench MOSFET in TO-220-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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JMTG3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.7mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and available in PDFN5x6-8L package. |
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JMTI3005A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 90A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.3mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and lead-free packaging in TO-251-3L. |
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JMTQ3005A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET JMTQ3005A with 30V VDS, 50A ID, RDS(ON) less than 4.8mΩ at VGS = 10V, PDFN3x3-8L package, suitable for load switch and power management applications. |
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JMTK3005A
