30-410 IDEAL INDUSTRIES Search Results

directional coupler -400

Contextual Info: CSD-25BH-0.9G DIRECTIONAL COUPLER REV: 006, 05/04/05 TECHNICAL DESCRIPTION FEATURES • 410 - 894 MHz • LOW LOSS • HIGH DIRECTIVITY • EXCELLENT COUPLING ACCURACY • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • LAND MOBILE RADIO LMR SYSTEMS

Contextual Info: VPC’s VTAC High Speed Data HSD connectors allow engineers in multiple industries to test devices that communicate at greater speeds and require higher data rates. The VTAC HSD insert features a data transfer rate of 12.5+ Gbps per differential pair. Each VTAC HSD 50 µ" gold-plated, self-aligning contact

460 MHz radio receiver

Contextual Info: QHD-2N-0.45G QUAD HYBRID PRELIMINARY REV: 009, 11/17/04 TECHNICAL DESCRIPTION FEATURES • 350 - 520 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION

iSeries

Contextual Info: Configurable and scalable connectors for every I/O requirement the background story on the new standard for connectors As a global leader in the test and measurement industry, Virginia Panel Corporation VPC takes pride in meeting the market’s current and future needs by providing the highest quality and most

Contextual Info: For over 50 years, Virginia Panel Corporation VPC has provided the highest quality and most innovative Mass InterConnect Solutions on the market. As a global leader in the test and measurement industry, our goal is to meet the market’s current and future needs. VPC is ISO 9001:2008 certified,

30054

Abstract: 30402 30403 efd-15 transformer transistor 30054 T-30002 30407 30606 31202 ECHO schematic diagrams
Contextual Info: Rhombus Industries Inc. Transformers & Magnetic Products 1999 Audio Transformers & Inductors for Telecommunications Products Include . Modem Transformers Voice & Data Coupling PCMCIA 56kbps Line Matching Low Profile V.17 V.22 V.29 V.32 Hybrids TAX Filters

SF HD60

Abstract: ic temperaturregler CMRD4865 miniatur linear potentiometer and gatter CXE DIODE D2425 H12WD4890 hd4850 LR1200480D25R
Contextual Info: DER WELTMARKTEXPERTE FÜR HALBLEITERRELAISTECHNIK Platinenmontage Schaltschrankmontage DIN-Schienenmontage Zusatzmodule E/A-Module Halbleiterrelais • Zusatzmodule • E/A Module C rydom hat einen ausgezeichneten Ruf als Lieferant fortschrittlicher und hochwertiger

ignition IGBT

Abstract: ngb15n41 aac marking NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

DOS-1204-G

Abstract: DOS-1204-W 4 pin yellow led VT12T 12T-2 12T-2N DOL-1204-G10M DOL-1204-G15M
Contextual Info: ranges in overview: • VS/VE 12 through-beam photoelectric switch: 5 m, ■ VL 12 photoelectric reflex switch: 2.8 m PL 80 A , switching reliability even with reflecting objects thanks to polarization filter and red LED transmitter. ■ VT 12 photoelectric proximity

Contextual Info: NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high

EV76C560

Abstract: cmos SENSOR "global shutter" HD cmos IMAGE SENSOR global shutter HD cmos SENSOR rolling shutter with global reset EV76C560BB EV76C560BC E2V cmos automotive CMOS sensor ev76
Contextual Info: EV76C560 B&W and Colour CMOS Sensor Nothing remains in the shade Key Features > 1.3 Million pixels 1280 x 1024 , 5.3 m Square pixels with micro-lens > High speed: 60 fps at full resolution, low light CMOS sensor > Operating temperature [-30° to +65°C]

General Purpose Filtered Modules

Contextual Info: F2199/F2200 RFI Filters Specifications: • Ideal for Linear Power Supplies in Digital Equipment F2199/F2200 Simplified Schematic L LOA D L G N N .881 22,4 L I N E 1.575 1.98 (40,0) (50,29) Max. L O 1.145 A (29,08) D 1.555 (39,5) .250 QC (6,4) .550 (13,97)

95A sensor hall

Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Contextual Info: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.

MONOLITHIC AMPLIFIERS

Abstract: QHDZ-2H-0.45G
Contextual Info: QHDZ-2H-0.45G QUAD HYBRID REV: 003, 03/17/06 TECHNICAL DESCRIPTION FEATURES • 350 - 525 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT • TAPE & REEL AVAILABLE APPLICATIONS • CDMA 450 BASE STATION POWER AMPLIFIERS

Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: QHDZ-2N-0.45G QUAD HYBRID PRELIMINARY REV: 003, 07/26/05 TECHNICAL DESCRIPTION FEATURES • 380 - 520 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • HIGH POWER HANDLING • SURFACE MOUNT APPLICATIONS • CDMA 450 BASE STATION

NGP15N41CL

Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

NGD15N41CL-D

Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-10 GHz EHA lph a AS018M2-01, AS018M2-10 -01 Features • Broadband D C -1 0 GHz 0.220 5.59 mm • 0.210(5.33 mm) ■•—0.130 (3.30 mm) TYP. ■ High Isolation, Non-Reflective 0.063(1.60 mm) TYP. ■ 7 Lead Hermetic Package

AS018M2-01

Abstract: AS018M2-10 DC-10 DC80 V
Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-10 GHz ESAlpha AS018M2-01, AS018M2-10 Features -01 • Broadband DC-10 GHz 0.220 5.59 mm 0.210 (5.33 mm) «•-0.130 (3.30 mm) TYP. ■ High Isolation, Non-Reflective 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

071 0039

Abstract: ngb15n41 NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

NGB15N41CLT4

Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41CLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41G

Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features