30 OHMS 100 W Search Results

ei 14 transformer

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: L=1.2 mH Min @ 100 KHz, 50mV Turns Ratio: PRI : SEC = 1CT:2CT PRI DC Resistance: 0.7 ohms Max @ 25ºC SEC DC Resistance: 1.4 ohms Max @ 25ºC 1 Interwinding capacitance: Cw/w=30 pf Max @ 100 KHz 50mV PRI Leakage Inductance: 0.6uH Max @ 100 KHz, 50mV

h1g1

Contextual Info: i S T A C K I N G MODULE PAR T NUMBER TREE 9 5 5 4 5 X X X 2 X “V STACKING 44 44 mm B E T W E E N 40 40 mm B E T W E E N 30 30 mm B E T W E E N 22 22 mm B E T W E E N [10] 15 = 15 mm B E T W E E N 100 ohms, 85 ohms, 100 ohms. 85 ohms. P L A T I N G OPTIONS

uPC1270H

Abstract: upc1270
Contextual Info: UPC1270H Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min.30 @R load (Ohms)8.0 Upper 3dB Frequency (Hz) AV (dB) Min.30 Input Resistance Min. (Ohms)100 THD Max. (%) Quies. Pwr (W)4.1 Nom. Supp (V)36 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)75

ZENER DIODES SOT-23

Abstract: marking 18j sot23 MARKING 8S SOT-23
Contextual Info: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28

EP7179

Contextual Info: 14 Pin DIP Passive Delay Lines Zo OHMS ±10% 50 50 50 50 50 50 100 100 100 100 100 100 DELAY nS ±5% or ±2 nS 16 20 24 50 100 125 30 35 37 40 47 50 TAP DELAYS nS RISE TIME nS MAX ATTEN % MAX PCA PART NUMBER Zo OHMS ±10% 1.610.6 2 ±0.6 2.4+0.6 5±2 10±2

WMLB0603-101

Abstract: WMLB0603-102 WMLB0603-151 WMLB0603-300 WMLB0603-301 WMLB0603-600 WMLB0603-601 Wilco Corporation
Contextual Info: 1.6 +/- 0.2 0.8 +/- 0.2 0.8 +/- 0.2 0.5+/- 0.3 Dimensions in mm FEATURES Wilco Part Number Z OHMS Impedance +/-25% Test Frequency (Mhz) DCR Ohms (Max) IDC (mA) • Reduce high frequency noise interference WMLB0603-300 30 100 0.2 200 • Multilayer construction for

Contextual Info: WIRE-WOUND CHIP INDUCTOR – FERRITE/OPEN TYPE 1008HS 2520 Ferrite Series (0.12~100µH) RDC Max Ohms IDC Max mA 800 0.10 1200 800 0.15 1200 30 @ 25.2MHz 600 0.20 1200 30 @ 25.2MHz 600 0.25 1200 10,5 30 @ 25.2MHz 425 0.30 1200 10,5 30 @ 25.2MHz 400 0.20 1100

EP9167

Abstract: SMD28
Contextual Info: SMD 28 Pin Gull-Wing Passive Delay Lines Zo OHMS ±10% DELAY NS ±5% or ±2 NS TAP DELAYS NS RISE TIME NS MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5+0.5 3.0±0.5 3.5±0.5 4.0+0.5

1378

Abstract: T-1378 MAXIM MAX250
Contextual Info: PULSE TRANSFORMER Designed for use with Maxim "MAX250" Turns Ratio + 5% 1CT : 1 Parameter Min. Max. Units Open Circuit Inductance 1.0 2.5 mH 30 µH 100 pF Primary DC Resistance 2.0 ohms Secondary DC Resistance 2.0 ohms Flammability: Materials used in the production of these units

Contextual Info: PULSE TRANSFORMER Designed for use with Maxim "MAX250" Turns Ratio + 5% 1CT : 1 Parameter Min. Max. Units Open Circuit Inductance 1.0 2.5 mH 30 µH 100 pF Primary DC Resistance 2.0 ohms Secondary DC Resistance 2.0 ohms Flammability: Materials used in the production of these units

Contextual Info: ECG721 Linear ICs Dual-Channel Audio Preamp/Input Amplifier status Outp Pwr Min. @R load (Ohms)100 Upper 3dB Frequency (Hz) AV (dB) Min.65 Input Resistance Min. (Ohms) THD Max. (%) Quies. Pwr (W) Nom. Supp (V)12 Minimum Operating Temp (øC)-30 Maximum Operating Temp (øC)85

EP9132

Abstract: EP9134 EP9142 EP9144 EE-19 N EP9131 EP9145 EP9146 EP9147 EP9160
Contextual Info: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0

Contextual Info: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0

Contextual Info: ECG1212 Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min.9.5 @R load (Ohms)8 Upper 3dB Frequency (Hz) AV (dB) Min.38 Input Resistance Min. (Ohms)100k THD Max. (%)0.2 Quies. Pwr (W) Nom. Supp (V)32 Minimum Operating Temp (øC)-30 Maximum Operating Temp (øC)100

EP9142

Abstract: EP9144 EP9132 EP9134 EP9131 EP9140 EP9141 EP9150
Contextual Info: SMD 28 Pin Passive Delay Lines Zo OHMS ±10% DELAY NS±5% or ±2NS TAP DELAYS NS RISE TIME NS MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.0±0.5 3.5+0.5 4.0±0.5 4.5±0.5 5.0±1.0

NMA2106-A1E

Contextual Info: Legacy NMA2106-A1E 100 Hz to 30 MHz Specifications RF Frequency Noise Output Noise Spectral Density No Flatness Peak Factor Bias Voltage Impedance 100 Hz to 30 MHz 101.8 dB ENR -72.2 dBm/Hz Min 2 dB P-P Max 5:1 15 V 50 ohms Package and Connectivity Construction

Contextual Info: Legacy NMA2106-A2S 100 Hz to 30 MHz Specifications RF Frequency Noise Output Noise Spectral Density No Flatness Peak Factor Bias Voltage Impedance 100 Hz to 30 MHz 101.8 dB Min ENR -72.2 dBm/Hz Min 2 dB P-P Max 5:1 15 V 50 ohms Package and Connectivity Construction

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-66 PACKAGE T0213AA TO-66 • 30 B V DSS VOLTS @ 0.5 ID OHMS Id Continuous AMPS IDM PULSE DRAIN CURRENT AMPS WATTS NSFJ120 100 0.3 8.0 32 40 NSFJ130 100 0.18 12.0 40 50 NSFJ140 100 0.085 15.0 60 70 NSFJ220

Contextual Info: TCR’s for MSI Resistors TEMPERATURE COEFFICIENT OF RESISTANCE RESISTANCE RANGE IN OHMS Type 96 84 66 98 91 10 20 81 56 19 82 93 61 86 5 83 90 87 94 97 80 88 85 89 68 30 28 26 0.1 to < 1 400 300 300 300 100 100 300 100 100 100 100 100 100 100 500 100 100

Contextual Info: TCR’s for MSI Resistors TEMPERATURE COEFFICIENT OF RESISTANCE RESISTANCE RANGE IN OHMS Type 96 84 66 98 91 10 20 81 56 19 82 93 61 86 5 83 90 87 94 97 80 88 85 89 68 30 28 26 0.1 to < 1 400 300 300 300 100 100 300 100 100 100 100 100 100 100 500 100 100

IRFC430

Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Contextual Info: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0

EP9132

Abstract: EP9144 EP9134 EP9142 EP9131 EE-19 N EP9161 EP9133 EP9135 EP9136
Contextual Info: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays ± 10% or ±2 nS† nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 Rise Atten. Time DB% nS Max. Max. 2.5±0.5 3.0±0.5 3.5±0.5

Contextual Info: 14 Pin Single-in-Line Package Passive Delay Lines Zo OHMS ±10% 50 50 50 50 50 50 50 50 50 50 DELAY NS ±5% or ±2 NS 10 20 30 40 50 60 70 80 90 100 TAP DELAYS ±5% or ±2 NS RISE TIME NS MAX DCR OHMS MAX PCA PART NUMBER Zo OHMS ±10% DELAY NS ±5% or ±2 NS

MSCQ01

Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
Contextual Info: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is