30 HM Search Results

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

29rd120

Abstract: 21RC60 SF2500Ex21 39RC60 21RC80 11RC60 29RD80 29rd60 21RC100 SF1500EX24
Contextual Info: -27 n Ä V 1.75 1. 55 2. 40 1. 55 1. 55 1. 55 1. 55 1. 82 2. 50 1. 50 1. 50 1. 50 1. 50 2. 30 2. 30 2. 30 2. 30 2. 30 2.30 2. 30 2. 30 2. 20 2.20 2. 20 2. 20 2.20 2. 20 2. 20 2. 20 1. 92 1. 92 1. 92 1. 92 1. 92 1. 92 2. 10 2. 10 2.10 2. 10 2. 10 dv/dt (min)

NE85630

Abstract: nec03 NE68030 NE68130 2SC4227 2SC4228 NE68330 NEC0330 NE68030 NEC Mini-Mold
Contextual Info: NEC/ CALIFORNIA 5bE 3> NEC • hM2?mM 0002352 MbM MNECC 30 PACKAGE SUPER MINI-MOLD FEATURES OUTLINE DIMENSIONS Unite in mm • 40 % REDUCTION IN FOOTPRINT AREA (from SOT-23) OUTLINE 30 • 30 % REDUCTION IN HEIGHT (from SOT-23) «— 2 .1± 0.1 — : • 50% REDUCTION IN WEIGHT

M5757/40-005

Abstract: DIODE 65A
Contextual Info: High Performance Relays and Power Contactors Shock 30 G's 30 G's 30 G's 30 G's 30 G's 100 G's 100 G's 150 G's 100 G's 100 G's Contact Form Contact Rating Coil Voltage Temperature Rating Vibration Shock Mil-Spec Up to 10A Up to 2A Up to 4A Up to 5A Up to 2A

wd4m

Contextual Info: COMPLIANT PIN IMPEDANCE DESCRIPTION PLATING DIM 30 MICROINCH GOLD 50 MICROINCH GOLD 30 MICROINCH GOLD, LEADFREE 950-521A-B1E 50 MICROINCH GOLD, LEADFREE 950-521C-B1B 30 MICROINCH GOLD 50 MICROINCH GOLD 950-521C-B1D 30 MICROINCH GOLD, LEADFREE 950-521C-B1E

intel 2148H

Abstract: INTEL 3214 2148H 2149H intel 3212 2148 static ram
Contextual Info: 2148H FAMILY 1024 x 4 BIT STATIC RAM ^iU M O IÎM Y •2148H-2 2148H-3 2148H ‘ 2148HL-3 2148HL Max. Access Time ns 45 55 70 55 TO Max. Active Current (mA) 150 *150 *150 125 125 Max. Standby Current (mA) 30 30 30 20 20 • Improved Performance Margins ■ HMOS* III Technology

DIODE SMD 6M

Contextual Info: Absolute Maximum Ratings T ype No. V rm lo Conditions [V ] [A ] [•G] I fsm Electrical Characteristics Tstg T| PC] Vf max Tc 30 30 4 40 *D F 4 0 S C 3 L 30 * 40 4 S60SC3M L 30 30 40 40 0M 60 : -5 5 -1 2 5 97 300 III 350 102 300 1 12 400 106 350 126 60 150

KSP12

Abstract: KST63
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-5. Darlington Transistors 1-5-1. SOT-23 Type Transistors Condition Device and Polarity NPN Vceo V PNP KST13<1M) KST14I1N) 30 30 30 30 KST63(2U) KST64(2V) lc (A) lc <mA) MIN 5 5 5 5 100 100 100 100 10K 10K 10K 10K 0.3 0.3 0.5

H944

Contextual Info: HMC944LC4 v03.0614 SWITCHES - SPDT - SMT GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT

Contextual Info: HMC1084LC4 v00.0313 SWITCHES - SP4T - SMT GaAs MMIC SP4T REFLECTIVE SWITCH 23 - 30 GHz Typical Applications Features The HMC1084LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 26 dB • Microwave Radio & VSAT

Contextual Info: 1. Mechanical Dimensions: B 7.10 ±0 .30 2 . Schem atic: C 3.20 Max 4.20 REF 1 r a X a o cq CO 3. Electrical Specifications: TOP VIEW OCL: 3 .30 uH ±2 0% @ 100KHz 0.25V, O.OAdc Q: 20 Min @ 100KH z 0.25V — I 3.70 |— DCR: 30 m O hm s Max in ro Irms: 6.0Adc B ased on 40’C Temp Rise

Contextual Info: HMC944LC4 v02.1110 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features the hMc944Lc4 is ideal for: Broadband Performance: 23 - 30 Ghz • telecom infrastructure high isolation: 35 dB • Microwave Radio & VSAt insertion Loss: 2.8 dB

24 GHz Microwave Sensor

Contextual Info: HMC944LC4 v00.0910 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT Insertion Loss: 2.8 dB

Contextual Info: HMC944LC4 v00.0910 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT Insertion Loss: 2.8 dB

HMC812LC4

Contextual Info: HMC812LC4 v00.0309 Attenuators - ANALOG - SMT 8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +25 dBm Input P1dB • VSAT Radio

hmc712

Abstract: microwave sensors Variable Attenuators to 2 GHZ
Contextual Info: HMC712 v00.1008 ATTENUATORS - ANALOG - CHIP 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC712 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input P1dB • VSAT Radio

Contextual Info: HMC712 v01.0709 AttenuAtors - AnAlog - Chip 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features the hMC712 is ideal for: Wide Bandwidth: 5 - 30 ghz • point-to-point radio excellent linearity: +28 dBm input p1dB • VsAt radio

Contextual Info: HMC812LC4 v02.0911 AttenuAtors - AnALoG - sMt 8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features the HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio excellent Linearity: +28 dBm Input IP3 • VSAT Radio

Contextual Info: HMC812LC4 v02.0911 Attenuators - ANALOG - SMT 8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input IP3 • VSAT Radio

Contextual Info: HMC812LC4 v03.0614 ATTENUATORS - ANALOG - SMT GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input IP3 • VSAT Radio

HMC712

Contextual Info: HMC712 v01.0709 ATTENUATORS - ANALOG - CHIP 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC712 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input P1dB • VSAT Radio

HMC712

Contextual Info: HMC712 v01.0709 Attenuators - analog - Chip 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC712 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input P1dB • VSAT Radio

ceramic attenuator

Abstract: HMC812LC4 microwave sensors Variable Attenuators to 2 GHZ
Contextual Info: HMC812LC4 v00.0309 ATTENUATORS - ANALOG - SMT 5 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +25 dBm Input P1dB • VSAT Radio

Contextual Info: HMC994 v02.1011 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT