3.9 V Search Results

C 735 transistor

Abstract: CZT5551 CMPT5551 CTLT5551-M832D CXT5551 CZT5551E transistor 735
Contextual Info: PROCESS CP336V Small Signal Transistor NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization

BVU-339QH9

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD OVAL LED LAMP BVU-339QH9 PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION 3.1 Dice Material : Light Color : Lens Color : Stand-Off P/N : 3.1 AlGaInP/GaAs Orange Red Orange Red Color Red Tinted Diffused BVU-339QH9 R 3.9 3.6 6.3 9.8 0.5

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD OVAL LED LAMP BVU-339BA9 PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION 3.1 Dice Material : Light Color : Lens Color : Stand-Off P/N : 3.1 GaN Blue Blue Color Blue Tinted Diffused BVU-339BA9 R 3.9 3.6 6.3 9.8 0.5 RADIATION PATTERN

BVU-339QT9

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD OVAL LED LAMP BVU-339QT9 PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION 3.1 Dice Material : Light Color : Lens Color : Stand-Off P/N : 3.1 AlInGaP/GaP Orange Red Orange Red Color Red Tinted Diffused BVU-339QT9 R 3.9 3.6 6.3 9.8 0.5

339T

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD OVAL LED LAMP BVU-339TT9 PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION 3.1 Dice Material : Light Color : Lens Color : Stand-Off P/N : 3.1 AlInGaP/GaP Yellow Yellow Color Yellow Tinted Diffused BVU-339TT9 R 3.9 3.6 6.3 9.8 0.5 RADIATION PATTERN

339g

Abstract: BVU-339GN9
Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD OVAL LED LAMP BVU-339GN9 PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION 3.1 Dice Material : Light Color : Lens Color : Stand-Off P/N : 3.1 GaN Green Green Color Green Tinted Diffused BVU-339GN9 R 3.9 3.6 6.3 9.8 0.5 RADIATION PATTERN

LEDMAN

Abstract: LL2508JTPG4-A02-01 ll2508tqyl4-a02 LL2508PVSG4-A02-01 LL2508PLBL4-A02 LL2501
Contextual Info: Model Dice Dimension Material Lens Color Oval 4MM Fe Leadframe RGB Screen Light Series LL2410TLHR4-A02 6.3*3.9*3.1 AlGaInP Red Diffused LL2410QUHR4-A02 6.3*3.9*3.1 AlGaInP Red Diffused LL2410PLBL4-A02-01 6.3*3.9*3.1 InGaN Blue Diffused LL2410PVSG4-A02-01 6.3*3.9*3.1 InGaN Green Diffused

BVU-339TH9

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD OVAL LED LAMP BVU-339TH9 PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION 3.1 Dice Material : Light Color : Lens Color : Stand-Off P/N : 3.1 AlGaInP/GaAs Yellow Yellow Color Yellow Tinted Diffused BVU-339TH9 R 3.9 3.6 6.3 9.8 0.5 RADIATION PATTERN

Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21

67580

Abstract: high current sot-363 p-channel mosfet
Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21

67580

Abstract: si1416
Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21

1D10

Abstract: 7D10 9D10
Contextual Info: Certificate TH97/10561QM 3EZ3.9D10 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5
Contextual Info: Certificate TH97/10561QM 3EZ3.9D5 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ4.3D10

Abstract: 1D10 7D10 9D10
Contextual Info: Certificate TH97/10561QM 3EZ3.9D10 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

9d10

Abstract: 1D10 3EZ200D10 7D10 3EZ36D1
Contextual Info: Certificate TH97/10561QM 3EZ3.9D10 ~ 3EZ200D10 Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ12D5

Abstract: 3EZ10D5 3EZ11D5 3EZ13D5 3EZ200D5
Contextual Info: Certificate TH97/10561QM 3EZ3.9D5 ~ 3EZ200D5 Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Bright View Electronics, LTD

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD ULTRA BRIGHTNESS LED LAMP BVU-3P0TT4 PACKAGE CONFIGURATION 3.9 DESCRIPTION 3.9 Dice Material : AlInGaP/GaP Yellow 3.0 2.9 Light Color : Yellow Color Lens Color : Water Transparent Stand-Off P/N : BVU-3P0TT4 R 4.5 1.0Max. 10.4

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD ULTRA BRIGHTNESS LED LAMP BVU-3P0QT4# BVT-3P0QT4# PACKAGE CONFIGURATION 3.9 3.9 DESCRIPTION Dice Material : Light Color : Lens Color : Stand-Off P/N : AlInGaP/GaP Orange Red Orange Red Color Water Transparent BVU-3P0QT4# R 3.0

Contextual Info: 3EZ Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * * * * Complete Voltage Range 3.9 to 400 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

R33E

Abstract: R12 SOT23-3 Marking R33D R33F R33C DRAWING R33C
Contextual Info: BurrĆBrown Products from Texas Instruments REF3312, REF3318 REF3320, REF3325 REF3330, REF3333 SBOS392 – AUGUST 2007 30ppm/°C Drift, 3.9 A, SOT23-3, SC70-3 VOLTAGE REFERENCE FEATURES 1 MICROSIZE PACKAGES: SC70-3, SOT23-3 LOW SUPPLY CURRENT: 3.9μA typ

T-50109

Abstract: 50109
Contextual Info: Turns Ratio + 5% PARAMETER MIN. Open Circuit Inductance MAX. UNITS 1.3 µHy Interwinding Capacitance (CW/W) 60 pF Primary DC Resistance 3.9 ohms Secondary DC Resistance 3.9 ohms 25 Rise Time nS 500 Average Power Rating Dissipation Rating Peak Pulse Voltage

Contextual Info: 3EZ3.9D10 Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5
Contextual Info: 3EZ Series SILICON ZENER DIODES VZ : 3.9 - 400 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

3EZ12D10

Abstract: 1D10 7D10 8D10 9D10
Contextual Info: 3EZ3.9D10 Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 1.00 25.4 MIN. 0.107 (2.7)