3.6 V Search Results

Contextual Info: January 2013 Low-voltage logic spectrum Features and functions Increasing speed Low Voltage Families LV LVC AUP AVC ALVC LVT ALVT CBTLV D Supply Voltage 1 to 3.6 V* 1.2 to 3.6 V* 0.8 to 3.6 V 1 to 3.3 V 1.2 to 3.6 V 2.7 to 3.6 V 2.3 to 3.6 V 2.3 to 3.6 V

SD-5556

Abstract: 555B 33FLR
Contextual Info: 5556.S31 ixi •.Ln d In □ CO or TIN OVER NICKEL PLATED BRASS TIN OVER COPPER PLATED BRASS M A TER IA L 3.6 . 142 (2.3) .091 (3.6) .142 (3.6) .142 (2.3) .091 (3.6) . 142 (3.6) . 142 (2.3) .091 (3.6) .142 (3.6) . 142 (2.3) .091 (3.6) . 142 (0.6) .024 (0.4)

Contextual Info: MB90F474-LQFP 1 - m Udd= 3.3 7 5 3 a. mmi - cu] * 1 UIH • Worst 3.2 3.1 3.2 3.2 : -.3 -.2 - - -.2 1 _1 1 - # FCR8.0MC5 CFig.a~e ■U I L ' r - 7 - - - " 1 - -.3 T - - - - f- - , + - b . U2H/U2L CU] 7 5 3.6 3.6 3.6 3.6 35 U2H V -3 1 -.1

Contextual Info: MN101C70 Series MN101C70C MN101CF70D Mask ROM FLASH ROM byte 48K 64K RAM (byte) 2K 4K LQFP080-P-1414A 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz) 62.5 µs (at 1.8 V to 3.6 V, 32 kHz) LQFP080-P-1414A (Under development) 0.25 µs (at 3.0 V to 3.6 V, 8 MHz)

Contextual Info: MN101C70 Series MN101C70C MN101CF70D Mask ROM FLASH ROM byte 48K 64K RAM (byte) 2K 4K LQFP080-P-1414A 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz) 62.5 µs (at 1.8 V to 3.6 V, 32 kHz) LQFP080-P-1414A (Under development) 0.25 µs (at 3.0 V to 3.6 V, 8 MHz)

Contextual Info: MN101C70 Series MN101C70C MN101CF70D Mask ROM FLASH ROM byte 48K 64K RAM (byte) 2K 4K LQFP080-P-1414A 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz) 62.5 µs (at 1.8 V to 3.6 V, 32 kHz) LQFP080-P-1414A (Under development) 0.25 µs (at 3.0 V to 3.6 V, 8 MHz)

Contextual Info: MN101C70 Series MN101C70C MN101CF70D Mask ROM FLASH ROM byte 48K 64K RAM (byte) 2K 4K LQFP080-P-1414A 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz) 62.5 µs (at 1.8 V to 3.6 V, 32 kHz) LQFP080-P-1414A (Under development) 0.25 µs (at 3.0 V to 3.6 V, 8 MHz)

TC7PA53FU

Abstract: TC7PA53
Contextual Info: TC7PA53FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA53FU 2-Channel Multiplexer/Demultiplexer Features • Ultra-low on resistance: RON = 21 Ω max at VCC = 3.6 V • Operating voltage range: VCC (opr.) = 1.8 to 3.6 V • 3.6 V Tolerant inputs.

TC7PA34FU

Contextual Info: TC7PA34FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA34FU Dual Non-Invert Buffer with 3.6 V Tolerant Input and Output Features • Operating voltage range: VCC = 1.8~3.6 V • High-speed operation: tpd = 3.5 ns max at VCC = 3.0~3.6 V

TC7SA32F

Abstract: TC7SA32FU
Contextual Info: TC7SA32F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SA32F,TC7SA32FU Low Voltage 2-Input OR Gate with 3.6 V Tolerant Inputs and Outputs Features TC7SA32F • Low voltage operation : VCC = 1.8~3.6 V • High speed operation : tpd = 2.8 ns max (VCC = 3.0~3.6 V)

Contextual Info: K hmcnGics AWT939 3.6 V DAMPS/AMPS Power Amplifier Advanced Product Information Your GaAs IC Source RevO 800 MHz Band DAMPS 3.6 V Dual Supply GaAs MMIC Power Amp Description: The AW T939 is a 3.6 Volt 2 stage monolithic Power Amplifier suited for dual mode

ST72T751N9B1

Abstract: FCR24
Contextual Info: ST72T751N9B1 - 1 Rf CMohm] 1 FCR24. 0M2G V dd- 5 CV] F i g .a ^ d T a - 20 Cdeg] *- .* T y p ic a l ? a . V1H/V1L 5 CV] V1H 3.7 » 3 3.7 -V 3,•7 3.6 3.6 ‘I *1 .8 .9 3.8 3^6 3, 7 3.6 3.6 I V"L »1* ‘i3 1 2 1.3 1.4 I ‘t VII 1 -1 b . V2H/V2L

Contextual Info: TC7PA04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA04FU Inverter with 3.6 V Tolerant Input and Output Features • • Low voltage operation : VCC = 1.8 to 3.6 V High speed operation : tpd = 2.8 ns max (VCC = 3.0 to 3.6 V) : tpd = 3.7 ns (max) (VCC = 2.3 to2.7 V)

gsm block diagram

Contextual Info: E Your bobogo * GaAs IC Source AWT936 3.6 V GSM PA Advanced Product Information Rev 0 800 MHz Band GSM 3.6 V GaAs MMIC Power Amplifier Description: n n r H '“i - The AW T936 is a 3.6-Volt monolithic Power Amplifier suited for GSM cellular telephone applications.

Contextual Info: K mBDOÇS AWT938 3.6 V C DMA/AMPS Power Amplifier Advanced Product Information Your GaAs IC Source RevQ 800 MHz Band CDMA/AMPS 3.6 V Dual Supply GaAs MMIC Power Amp Description: The AW T938 is a 3.6 Volt 2 stage monolithic Power Amplifier suited for dual mode

gms80c301

Abstract: gms80c301-40 ta 7384
Contextual Info: GMS80C301 40 - FCR40.0M2G Vdd= 5 [V ] F ig . a ~ d Ta= 20 Cdeg] Typ i c a l a. V IH / V IL 7 5 3 VIH 1 VII -1 7 1 oi [V ] 3.4 3.6 1 1 3.6 : 1 t . ? : .5 1 1 1 1 1 1 1 1 1 1 .5 *5 *,G 1 b. V2H/V2L ÿ - | i 3.6 3.6 ' * • - " 1 l i l t [V ] S ; 1

t936

Abstract: gsm block diagram
Contextual Info: E bübbgo* A W T936 3.6 V GSM PA Advanced Product Information Your GaAs IC Source RevO 800 M Hz Band G SM 3.6 V GaAs MMIC Power Amplifier Description: The A W T 9 36 is a 3.6-Volt monolithic Power Amplifier suited for G S M cellular telephone applications.

Contextual Info: MN101CF96D, MN101CF96F MN101CF96D Type MN101CF96F FLASH Internal ROM type ROM byte 64K 96K RAM (byte) 3K 6K LQFP064-P-1414 (Under planning) [Standard] 0.2 µs (at 2.7 V to 3.6 V, 10 MHz) 0.5 µs (at 2.7 V to 3.6 V, 4 MHz) 62.5 µs (at 2.7 V to 3.6 V, 32 kHz)

Contextual Info: E b o b b o c AWT939 3.6 V DAMPS/AMPS Power Amplifier Advanced Product Information * s Your GaAs IC Source RevQ 800 MHz Band DAMPS 3.6 V Dual Supply GaAs MMIC Power Amp Description: The AW T939 is a 3.6 Volt 2 stage monolithic Power Amplifier suited for dual mode

Contextual Info: MN101C95 Series MN101CF95G Type Internal ROM type FLASH ROM byte 128K RAM (byte) 6K Package (Lead-free) Minimum Instruction Execution Time TQFP080-P-1212D [Standard] 0.2 µs (at 2.7 V to 3.6 V, 10 MHz) 0.5 µs (at 2.7 V to 3.6 V, 4 MHz) 62.5 µs (at 2.7 V to 3.6 V, 32 kHz)

54VCXH162373

Abstract: RHRXH162373K1 d 1557
Contextual Info: 54VCXH162373 Rad hard low voltage CMOS 16-bit D-type latch 3-state with 3.6 V tolerant inputs and outputs Features • 1.65 to 3.6 V inputs and outputs ■ High speed: – tPD = 3.3 ns (Max.) at VCC = 3.0 to 3.6 V – tPD = 4.5 ns (Max.) at VCC = 2.3 to 2.7 V

54VCXH162374

Abstract: RHRXH162374K1
Contextual Info: 54VCXH162374 Rad hard low voltage CMOS 16-bit d-type flip-flop 3-state with 3.6 V tolerant inputs and outputs Features • 1.65 to 3.6 V inputs and outputs ■ High speed: – tPD = 3.4 ns (Max.) at VCC = 3.0 to 3.6 V – tPD = 4.8 ns (Max.) at VCC = 2.3 to 2.7 V

Contextual Info: Intel386 EX Embedded Microprocessor Datasheet Product Features • Static Intel386™ CPU Core — Low Power Consumption — Operating Power Supply EXTB: 2.7 V to 3.6 V EXTC: 4.5 V to 5.5 V — Operating Frequency 20 MHz EXTB at 2.7 V to 3.6 V 25 MHz EXTB at 3.0 V to 3.6 V;

54VCXH162245

Abstract: RHRXH162245K1 RHFXH162245K03V
Contextual Info: 54VCXH162245 Rad hard low voltage CMOS 16-bit bus buffer transceiver 3-state with 3.6 V tolerant inputs and outputs Features • 1.65 to 3.6 V inputs and outputs ■ High speed A outputs: – tPD = 3.4 ns at VCC = 3.0 to 3.6 V – tPD = 4.3 ns at VCC = 2.3 to 2.7 V