3 V ZENER DIODE 1W Search Results

IN3027B

Abstract: IN3048B IN3034B diode 1N3048b ZENER 1 WATT 6.8V in3020b in3022b in3033b 1N3020B 1N3016B
Contextual Info: 1N 3016B thru 1 N 3 0 5 1B Microlsemi Corp. ' The diode experts SA NTA A NA, CA SCOTTSDA J.E, A Z / F o r m ore in fo rm atio n call: 602 9 4 I-6 3 0 0 FEATURES • ZENER VO LTA G E RANGE: 6.8 V TO 200V • 1N3016B TH RO UG H 1N3051B H A VE JA N , JA N T X , and J A N T X V Q U A L IF IC A T IO N S

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: TENTATIVE DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

ROHM PTZ Series

Abstract: 5W zener diode zener diode 5.6 V
Contextual Info: PTZ Series Diodes Zener diode PTZ Series zExternal dimensions Units : mm zApplications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. 4.5±0.2 zFeatures 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size.

ZENER DIODE 0.5W 3.7 V

Abstract: voltage regulation diode 8.2 v 1w Zener diode 183 39 77 zener diode Honey Technology ZM-PTZ10B ZENER DIODE 15W ZM-PTZ12B ZM-PTZ13B ZM-PTZ16B
Contextual Info: ZM-PTZ3.6B ~ ZM-PTZ36B SILICON EPITAXIAL PLANAR ZENER DIODES LL-41 Features 1 Small surface mounting type 2) 1W of power can be obtained despite compact size 3) High surge withstand level Applications 1) Voltage regulation and voltage limiting 2) Voltage surge absorption

CHARACTERISTICS DIODE 1n4732

Abstract: diode 1N4733 1W ZENER DIODE 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4764A 1N4747 diode
Contextual Info: 1N4728A THRU 1N4764A 1W EPITAXIAL ZENER DIODE FEATURES DO-41 GLASS 4.5 ± 0.2 Φ 2.5 ± 0.2 MECHANICAL DATA 25.4 ± 1 Φ 0.8± 0.1 • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

SZ103D

Abstract: SZ103G SZ103J SZ104D SZ104H SZ105B SZ105G SZ10E0 SZ1012 Zener diode SZ 600
Contextual Info: SZ103D THRU SZ10E0 1W SURFACE MOUNT SILICON ZENER DIODE VZ : 3.3 ~ 300 Volts PD : 1 Watt SMA DO-214AC * Complete Voltage Range 3.3 to 300 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.1 ± 0.3 4.5 ± 0.15 5.0 ± 0.15

Contextual Info: 1SMA4741-200Z Surface-mount Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power SMA/DO-214AC FEATURES For surface-mount applications in order to optimize board space Low-profile package Built-in strain relief Glass-passivated junction Low inductance

1N4742A JEDEC

Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A Z1200A
Contextual Info: 1N4728A THRU Z1200A 1W EPITAXIAL ZENER DIODE FEATURES DO-41 • Complete voltage range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) MECHANICAL DATA 0.205 (5.20)

Contextual Info: Formosa MS ZS110 THRU ZS330 1WATT SURFACE MOUNT ZENER DIODE 0.185 4.8 0.173(4.4) SMA FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 0.012(0.3) Typ. 0.110(2.8)

0 261 230 071

Contextual Info: Formosa MS ZTS200X THRU ZTS330Z 1WATT SURFACE MOUNT ZENER DIODE FEATURES SOLDERING PAD ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY CATHODE .087 2.2 .065(1.65) .040(1.25)

ZS140

Abstract: ZS150 ZS180 ZS130 zs100
Contextual Info: Formosa MS ZS100 THRU ZS330 1WATT SURFACE MOUNT ZENER DIODE FEATURES .110 2.8 .080(2.0) ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY .040(1.0) .051(1.3) .216(5.5) .185(4.7)

ZS170

Abstract: ZS150 ZS140 ZS180 ZS110 ZS115 ZS120 ZS130 ZS160 ZS330
Contextual Info: ZS110 THRU ZS330 FRONTIER ELECTRONICS CO., LTD. 1WATT SURFACE MOUNT ZENER DIODE FEATURES .110 2.8 .080(2.0) ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY .040(1.0) .051(1.3)

ZS-170

Abstract: ZS24
Contextual Info: FORMOSA ZS100L THRU ZS330L 1WATT SURFACE MOUNT ZENER DIODE 0.205 5.2 0.189(4.8) SMA-L FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 0.012(0.3) Typ. 0.110(2.8)

z150 zener diode

Abstract: z150 Diode Z310 Z170 z320 Z110 zener diode z270 Z120 Z130 Z150
Contextual Info: Z110 THRU Z330 Formosa MS 1WATT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 1.0 25.4 MIN .034(0.9) .028(0.7) .205(5.2) .166(4.2) MECHANICAL DATA

1z390

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage

21Z8

Abstract: 331Z 221Z
Contextual Info: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 1Z6.21Z390 1Z6.8A1Z30A APPLICATIONS: • CONSTANT VOLTAGE REGULATION • TRANSIENT SUPPRESSORS FEATURES: • Average Power Dissipation : P=1W • Peak Reverse Power Dissipation : P r SM=200W at tw=200ys • Zener Voltage

Z6 ZENER DIODE

Abstract: Z6 DIODE LZ13A 2-1Z390 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390
Contextual Info: TOSHIBA 1Z 6 . 2 - 1Z390,1Z 6 . 8 A - 1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1 Z 6.8 A -1Z 3 0 A CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation :

Contextual Info: SMA4728A THRU SMA4764A 1W SURFACE MOUNT SILICON ZENER DIODE VZ : 3.3 ~ 100 Volts PD : 1 Watt SMA DO-214AC FEATURES : .062(1.60) .055(1.40) * Complete Voltage Range 3.3 to 100 Volts * High peak reverse power dissipation * High reliability * Low leakage current

1Z16

Abstract: 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage

1Z150

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs

diode z104

Abstract: zener diode 15v 1w Zener Diode Glass 50v ZMY10 ZMY11 ZMY12 ZMY13 ZMY15 ZMY16 ZMY18
Contextual Info: ZMY 1.ZMY 100 1W SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power LL-41 Cathode band rating. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are upon request.

1Z12

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V