3 PHASE BRIDGE DIODE Search Results

anode gate thyristor

Abstract: 3phase thyristor firing circuit fast thyristor 200A gate control circuits 3 phase thyristor dc drive pgh15016am 600A thyristor scr snubber FOR 3PHASE BRIDGE RECTIFIER 200A thyristor gate control circuit thyristor firing circuit 6 thyristor driver circuit
Contextual Info: 3-phase diode bridge plus thyristor PGH series Power Module PGH series power module includes 3-phase diode bridge and inrush current limiting thyristor in a package. This series are widely applied to rectification circuit in popular 3-phase inverters. This paper shows how to use PGH series, and also

Contextual Info: NTE5744 & NTE5745 3 Phase Bridge Rectifier Modules Description: The NTE5744 and NTE5745 powerblock modules are designed for three-phase full wave rectification and contain six diodes connected in a three-phase bridge configuration. The mounting base of the

STGIPN3H60

Abstract: gipn3h60
Contextual Info: STGIPN3H60 SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

Contextual Info: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

STGIPN3H60

Abstract: 3 phase IGBT inverter
Contextual Info: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Preliminary data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■

Contextual Info: STGIPN3H60 SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

"Power Diode" 10A 800v

Abstract: S30VTA80 high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VTA80 CaseCase : 2F: SVTA Unit : mm 800V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

S20VTA80

Abstract: Shindengen Electric Mfg.
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VTA80 CaseCase : 2F: SVTA Unit : mm 800V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

high Forward Voltage Diode

Abstract: D30VTA160
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS D30VTA160 Case : 2F Case : D30VTA Unit : mm 1600V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High voltage,1600V ●Applicable to mount on glass-epoxy substrate APPLICATION

S20VTA60

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VTA60 CaseCase : 2F: SVTA Unit : mm 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

NDIP-26L

Abstract: GIPN3H60A STGIPN3H60 3 phase IGBT inverter AN4043 EB1 marking STGIPN3H60A gipn3h60
Contextual Info: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

STGIPN3H60

Abstract: sd 2955
Contextual Info: STGIPN3H60 SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Preliminary data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■

S30VTA60

Abstract: high Forward Voltage Diode power diode 10a
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VTA60 CaseCase : 2F: SVTA Unit : mm 600V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

S10VT80

Abstract: high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT80 Case : 2F: SVT Case Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

gipn3h60

Abstract: STGIPN3H60 cmos tristate inverter
Contextual Info: STGIPN3H60 SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Optimized for low electromagnetic interference

STGIPN3H60

Abstract: AN4043 GIPN3H60-H gipn3h60
Contextual Info: STGIPN3H60-H SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − preliminary data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

power Diode 800V 5A

Abstract: S15VT80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VT80 CaseCase : 2F: SVT Unit : mm 800V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

DIODE 600V 15A

Abstract: S15VTA60 high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VTA60 CaseCase : 2F: SVTA Unit : mm 600V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

S30VTA160

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VTA160 CaseCase : 2F: SVTA Unit : mm 1600V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ●Applicable to mount on glass-epoxy substrate APPLICATION ●Big Power Supply

svt power inverter

Abstract: S20VT60 high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT60 CaseCase : 2F: SVT Unit : mm 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply

power Diode 800V 20A

Abstract: S20VT80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT80 CaseCase : 2F: SVT Unit : mm 800V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply

S15VT60

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VT60 CaseCase : 2F: SVT Unit : mm 600V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

DIODE 10a 800v

Abstract: S10VTA80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VTA80 CaseCase : 2F: SVTA Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

STGIPN3H60A

Abstract: NDIP-26L STGIPN3H60 STMicroelectronics 2905
Contextual Info: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Optimized for low electromagnetic interference