2T SOT Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

LMBT4403WT1G

Abstract: 1N916 MMBT4401LT1 MMBT4403LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

MMBT4403

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

smd marking cb SOT23 transistor

Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 1995 I HT2 Q_ PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V CBO 90 V C ollector-E m itter Voltage V CEO

smd transistor 2T

Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2T B E SOT-23

Contextual Info: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

AN9006

Abstract: SOT23 MARK Y3 C2N4403 2n4403
Contextual Info: 2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 B SOT-23 E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G

transistor d 1991 ar

Contextual Info: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

BTX94

Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
Contextual Info: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.

Contextual Info: 2N4403 Discrete POW ER & Signal Technologies SEMICONDUCTOR / MMBT4403 2N4403 MMBT4403 SOT-23 Mark: 2T PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l p u rp o s e a m p lifie r a n d s w itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d

kb 7k1

Abstract: 5a07 XIFG Y144 LC7870NE XOUT23 LSISS 64KX4 ch9i LC7867E
Contextual Info: * S 2t tÿ -MM ' mü m Sf 44 04 SI 18 u< &i 9t ü r¡ 9 i=F 0' è 11 c « ir m i# S n Bd H m O «t i » <? m •4 Q 5Ì1 }, ni «H â ô i î ftt ÏE c* tf- St 8 8 t d c ffi c # t i¥ îî s - a S iu d W A SU rs m » g. H a » * Ee □ C 9 Î " 9tt » Si !

Contextual Info: SGS-THOMSON T405 RiilD{gWll[LllOT R!lD i HIGH PERFORMANCE TRIACS IN DEVELOPMENT FEATURES • ITRMS = 4 A ■ VDRM = 400 V to 800 V ■ SENSITIVE GATE : lGT <; 5 mA ■ HIGH EFFICIENCY SWITCHING TO 220 AB Plastic DESCRIPTION SOT 82 (Plastic) The T405 high voltage TRIAC Families are high

2T transistor surface mount

Abstract: transistor MARKING CODE 2T transistor marking code 2.T marking code 2T 2T marking J-STD-020A MMBT4401T MMBT4403T 2t sot IC DATE code
Contextual Info: MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT4401T Ultra-Small Surface Mount Package SOT-523 Mechanical Data · · · · · · · · Dim Min Max Typ

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

PD70320

Abstract: UPD70320GJ UPD70320L-8 uPD70108 MPD70320 ACE SC CSA10.0MT shs-40 70116c stm cl-11
Contextual Info: z r — S 7 • is — S MOS M O S Integrated Circuit ¿uPP7 0 3 2 0 V25 16/8 t f "S h • > > 9 /¿PD70320 m #V25 7 7° (i, 161'-y hCPU, RAM, > h n - 7 Ì f 1 -f- flj h • •vf 9d7dì ÿ ')7 'W -i^ 7 i-X , tzis >7 Ki- ■y-t//PD70108/70116 (SiJ«#V20™/V30™)

PBYR740F

Contextual Info: PBYR735F PBYR740F PBYR745F NA M E RP H I L I P S / D I S C R E T E 25E D D ^ 53=131 0022=133 7 • \T-03-l7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. Their electrical isolation makes

Contextual Info: E5E D N AMER PHILIPS/DISCRETE •I bfc.S3T3i'OOSETE^ fi ■ BYV143F SERIES SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. Their electrical