2SV 70 Search Results

Contextual Info: Drawing XMK Seríes MECHANICAL SPECIFICATIONS M T IN G FORCEr 5-251Í RE1ENTIÜN STRENGTH: ^ 7 6 N D U R A B ILIT Y & 7G 0 T l t f S ELECTRICAL CURRENT KATIH G 5 L SAW S VOt-TM*; RATING: ]2SV AC INSU LATION RtSlSTAfiCKi ^ lD O O H Ü 1171 [STANDING VOLTAGE: AC L000V RMS BOta o r 60htz IMin

E13000

Contextual Info: B 3 RADI A L L 6GHz TECHNICAL DATA SHEET QMA FAILSAFE R577E13000 TRANSFER Page 1/ 2 SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 6 GHz : 50 Ohms 0 - 3 3 - 6 1.20 1.30 0.20 dB 0.30 dB >= 80 dB 70 dB AVER. POWER # 120 W 80 W FREQUENCY (GHz)

Contextual Info: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 700 W 500 W 400 W 250 W 200 W right

Contextual Info: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 700 W 500 W 400 W 250 W

uv phototransistor

Contextual Info: 6 79 8 5 8 0 OP T E K TECHNOLOGY OPTeFtECHNOLOSY 86 D 00038 INC INC ~ ab DE £/ 7 %. D IbT^ÖSfiO ' □□0DQ3S Sy ! s PH O T O T RA N SISTO R A N O PH O TO D ARLIN G TO N CHIPS ILtCTNICAl CHARACflftltTICt MC*CI leio BVew MIN IC=IOO < MAX VCE=I0V 8 PART NUMBER

NE540

Abstract: SE540 NE540 equivalent 500 watts amplifier schematic diagram 236BG 5612
Contextual Info: PIN CONFIGURATION FEATURES . • • • • INTERNAL CURRENT LIMITING LOW STANDBY CURRENT HIGH OUTPUT CURRENT CAPABILITY WIDE POWER BANDWIDTH LOW DISTORTION ABSOLUTE MAXIMUM RATINGS Supply Voltage Operating Temperature Range Storage Temperature Range Output Short Circuit Duration

Contextual Info: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B

2SD210

Contextual Info: HITACHI 2SD210 7 -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5

Contextual Info: FU JI tìU.eieu'UtìUK 2SK2643-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Q 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

S0146

Contextual Info: Hm -ft.ix -m m "140Commerce Drive m iC fO S B tU l Montgomeryviile, PA 18936-1013 I^ Œ h SÊ b s Î * Tel: 215 631-9840 - S D 1 4 6 8 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 23V POWER OUT 70W POWER GAIN

TCXO 10 MHz ITT

Abstract: TCXO ITT EVK 201 CRYSTAL ITT TCXO 4 5 MHZ 50-651-0000-31 ic 78m08 Mallory Capacitor amphenol C18 DATASHEET OF 8 pin DIP IC 741 ic 78m08 datasheet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145190, MC145191, MC145200 and MC145201 Evaluation Board Manual INTRODUCTION The MC145190EVK, ’191EVK, ’200EVK, and ’201EVK are versions of one board with a few component changes. They allow users to exercise features of the four devices and to build PLLs which meet individual performance requirements. The control program works with any board and can be used with other

LIFO

Abstract: WD1510 WD1511 417-834 MI132 WD1510-00 WD1510-01 WD1510-02 cs-550 is
Contextual Info: LIFO/FIFO Buffer Register WD1510-00,-01,-02 OPERATION The WDlSlOcontains a 132 x 9 buffer which may be programmed for 128 x 9 operation. Setting the 128/132 pin to a Logic 0, enables the EMPTY and FULL lines to be activated when 128 bytes are read or written. When the 128/132 line is set to a Logic 1

Contextual Info: B 3 RADI ALL This Information Is given as an Indication. In ths continual goal to Improve our products, we reserve the right to make any modifications judged necessary iTiilcSn Microwave components 6GHz TECHNICAL DATA SHEET QMA FAILSAFE R570 E13000 Page

INA-10386

Abstract: MC78M08CDT-1 78M05 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC145190EVKTS/D MC145190EVK Technical Summary MC145191EVK MC145190, MC145191, MC145200EVK MC145200 and MC145201 MC145201EVK Evaluation Boards INTRODUCTION The MC145190EVK, ’191EVK, ’200EVK, and ’201EVK are versions of one board with a few component

Contextual Info: B 3 RADI A L L TECHNICAL DATA SHEET 1 GHz 1,6/5.6 FAILSAFE R570 923000 Page 1/ 2 S.P.D.T. SWITCH OPTIONS : INDICATOR R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 1 GHz : 75 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= 0 - 0.5 1.25 0.5 1.30 0.15 dB

Contextual Info: B 3 RADI ALL right the products, we reserve our to Improve goal continual In the / LOW SIZE R F CHARACTERISTICS FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION >= AVER. POWER (#) CO : 0 -26.5GHz : 50 Ohms o 1 FREQUENCY RANGE IMPEDANCE GO as an Indication.

Contextual Info: B 3 RADI A L L M ic r o w a v e c o m p o n e n ts 40GHz SMA 2.9 fern LATCHING OPTIONS: INDICATOR R 5 7 7 843045 TECHNICAL DATA SHEET TRANSFER Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 40 GHz : 50 Ohms FREQUENCY GHz 0 V.S.W.R

Contextual Info: '• r n RAD I ALL TECHNICAL DATA SHEET 40GHz SMA-2.9 LATCHING R 5 7 2 833010 Page S.P.D.T. SWITCH 112 OPTIONS : right the products, we reserve our to Improve goal continual In the as an Indication. FREQUENCY RANGE IMPEDANCE FREQUENCY GHz V.S.W.R <= : 0 - 40 GHz

Contextual Info: B 3 RADI A L L M ic r o w a v e c o m p o n e n ts R 5 7 7 813107 TECHNICAL DATA SHEET 40GHz SMA 2.9 fern FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS: / TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 40 GHz : 50 Ohms FREQUENCY GHz 0 V.S.W.R

Contextual Info: [^ © U J C T ©ATTA[L ( N -C H A N N E L E N H A N C E M E N T I - J S tttr o M O S FET n Devices, Inc. CHIP NUMBER □ l CONTACT METALLIZATION Top Contact: > 12,OCX] A Aluminum .023" (0.584mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS

Contextual Info: '•rn R A D IA L L TECHNICAL DATA SHEET 1 GHz 1,6/5.6 FAILSAFE OPTIONS : INDICATOR I R570 923100 Page 112 S.P.D.T. SWITCH TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 1 GHz : 75 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= 0 - 0.5 1.25

Contextual Info: '• r n RAD I ALL LATCHING Page S.P.D.T. SWITCH 1 12 OPTIONS:/SELF CUT-OFF I TTL DRIVE R F CHARACTERISTICS to make right V.S.W.R INSERT. LOSS <= ISOLATION to Improve goal continual In the as an Indication. Is given 2 - 3 1.15 1.20 1.25 1.35 1.50 0.15 dB

Contextual Info: '• r n RA D I ALL 12.4GHz OPTIONS: TECHNICAL DATA SHEET TNC LATCHING R570 6 4 3 1 0 0 Page 11 2 S.P.D.T. SWITCH I TTL DRIVE INDICATOR R F CHARACTERISTICS to make right V.S.W.R INSERT. LOSS <= ISOLATION to Improve goal continual In the as an Indication.

Contextual Info: '• r n RAD I ALL TECHNICAL DATA SHEET 26.5GHz SMA-2.9 FAILSAFE OPTIONS : INDICATOR R570 7 2 3 1 0 0 Page 112 S.P.D.T. SWITCH I TTL DRIVE right the products, we reserve our to Improve goal continual In the as an Indication. FREQUENCY GHz V.S.W.R <= INSERT. LOSS <=