2SV 70 Search Results

uv phototransistor

Contextual Info: 6 79 8 5 8 0 OP T E K TECHNOLOGY OPTeFtECHNOLOSY 86 D 00038 INC INC ~ ab DE £/ 7 %. D IbT^ÖSfiO ' □□0DQ3S Sy ! s PH O T O T RA N SISTO R A N O PH O TO D ARLIN G TO N CHIPS ILtCTNICAl CHARACflftltTICt MC*CI leio BVew MIN IC=IOO < MAX VCE=I0V 8 PART NUMBER

NE540

Abstract: SE540 NE540 equivalent 500 watts amplifier schematic diagram 236BG 5612
Contextual Info: PIN CONFIGURATION FEATURES . • • • • INTERNAL CURRENT LIMITING LOW STANDBY CURRENT HIGH OUTPUT CURRENT CAPABILITY WIDE POWER BANDWIDTH LOW DISTORTION ABSOLUTE MAXIMUM RATINGS Supply Voltage Operating Temperature Range Storage Temperature Range Output Short Circuit Duration

Contextual Info: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B

Contextual Info: FU JI tìU.eieu'UtìUK 2SK2643-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Q 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

S0146

Contextual Info: Hm -ft.ix -m m "140Commerce Drive m iC fO S B tU l Montgomeryviile, PA 18936-1013 I^ Œ h SÊ b s Î * Tel: 215 631-9840 - S D 1 4 6 8 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 23V POWER OUT 70W POWER GAIN

TCXO 10 MHz ITT

Abstract: TCXO ITT EVK 201 CRYSTAL ITT TCXO 4 5 MHZ 50-651-0000-31 ic 78m08 Mallory Capacitor amphenol C18 DATASHEET OF 8 pin DIP IC 741 ic 78m08 datasheet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145190, MC145191, MC145200 and MC145201 Evaluation Board Manual INTRODUCTION The MC145190EVK, ’191EVK, ’200EVK, and ’201EVK are versions of one board with a few component changes. They allow users to exercise features of the four devices and to build PLLs which meet individual performance requirements. The control program works with any board and can be used with other

Contextual Info: B 3 RADI ALL This Information Is given as an Indication. In ths continual goal to Improve our products, we reserve the right to make any modifications judged necessary iTiilcSn Microwave components 6GHz TECHNICAL DATA SHEET QMA FAILSAFE R570 E13000 Page

Contextual Info: [^ © U J C T ©ATTA[L ( N -C H A N N E L E N H A N C E M E N T I - J S tttr o M O S FET n Devices, Inc. CHIP NUMBER □ l CONTACT METALLIZATION Top Contact: > 12,OCX] A Aluminum .023" (0.584mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS

876A

Abstract: IR TRANSISTOR
Contextual Info: Optolink Ltd Optical Switches ChanetorM te ic o n Tm I 1f CondWont V cm As ) Shown R L -0 mA Unft Ic O F F IO N | 1OFF V C * K i) V I (tod) V c* A t Shown H -0 H i 20mA S 1- lit Ic As Shown II As Shown nA V V V MS mA V <•*> bV tv coo •CO Ic GAP Output

Contextual Info: B 3 This Information Is given as an Indication. In ths continual goal to Improve our products, we reserve the right to make any modifications judged necessary iT iilc S n RAD I ALL 12.4GHz OPTIONS : / TTL DRIVE R573 103625 TECHNICAL DATA SHEET M icrow ave components

Contextual Info: This Information Is given as an Indication. In ths continual goal to Improve our products, we reserve the right to make any modifications judged necessary B 3 RADI ALL iTiilcSn Microwave components R 5 7 3 823410 TECHNICAL DATA SHEET 4 0 GHz S M A - 2 .9

ADG200-series

Abstract: ADG200CJ MIL-STO-883
Contextual Info: 01CMOS ProtectedDualSPSTAnalogSwitch ADG200 ANALOG W DEVICES FEATURES latch.Proof DI CMOS Overvoltage.Proof: VSUPPL Y :!:25V Superior DG-200 Replacement Break-Before-MakeSwitching Action RON: 100n max over Full Temperature Range Direct TTl/CMOS Interface OBS

Contextual Info: B 3 RADI ALL TECHNICAL DATA SHEET This Information Is given as an Indication. In ths continual goal to Improve our products, we reserve the right to make any modifications judged necessary iTiilcSn Microwave components 12.4 GHz OPTIONS : TNC INDICATOR R573 653620

Contextual Info: 2682-Series Features • ■ ■ ■ Broadband Frequency Ranges Hermetically Sealed TTL Compatible Removable SM A Connectors Description M /A-C O M ’s diode switches cover multi-octave bandwidths from UHF to Ku-band. M/A-COM’S capability in both semiconductor and

Contextual Info: O rdering num ber: EN2063A 2SB1143/2SD1683 NO.2063A PNP/NPN Epitaxial Planar Silicon Transistors SAMYD 50V/4A Switching Applications I Applications . Voltage regulators, relay drivers, lamp drivers t electrical equipment Features • Adoption of FBET, MBIT processes

2SK1018

Abstract: G-120 C Mosfet tr fet 1A schematic symbols UPS
Contextual Info: 2S K 1018 S I P M 0 S * * ± '< 7 - M 0 S - F E T * ^ < 7 - M0S-FET F-II N-CHANNEL SILICON POWER M O SFET SERIES : Features •* 4 : Outline Drawings Kd' ÄV. ' •* High speed switching C5-« L o w on-resisiance • iS * N o secondary breakdown •ff Low d riving power

Contextual Info: BUCHANAN M E T R IC Eurostyle Terminal Blocks Catalog 1307612 Dimensions are millimeters over inches Revised 7-01 Screwless Terminal Blocks Product Facts • Available in 5.0mm and 5.08mm pitch sizes ■ Accepts wire range 14-22 AWG ■ Current capability: 10 A and 20 A

Contextual Info: PBBUGEC P L E S S E Y ADVANCE INFORMATION DS3664-1-2 SP8630 6oomhi+io The SP8630 is an asynchronous sm ittsr coupled logic divider w hich provides an ECLIII/1 OK com patible output when used w ith an external pulldow n resistor. It requires an AC coupled input o f SOOmV p-p.

Contextual Info: 6 7 9 8 5 8 0 O PTEK TECHNOLOGY 86 D 00038 INC OPtEK TECHN O LO GY INC aT 7 %. D £/ DE I tVlfl'SflD 0000030 S T - V /-/9 .0 2 7 X .0 2 7 PH O TO TRA N SISTO R A N O PH O TO D A RLIN G TO N CHIPS SLtCTfllCAL CHARACfCftltTICt IM 'CI CHIP TYPE part NUMBER le io

Contextual Info: ^E.mi-dondactoi {Piodueti, -Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFM250 POWER MOSFET THRU-HOLE (TO-254AA) Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed

Contextual Info: L- Conductor na. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERU AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6764 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Absolute Maximum Ratings (Tc - +25°C) Unless Otherwise Specified

ITS 31422

Abstract: 2044B 2SC4523
Contextual Info: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed

MOSFET 300V

Abstract: 300V series regulators
Contextual Info: FUJI 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - IQ 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: Ordering num beriE N 3136 2SA1732 No.3136 SA W O PN P E p itax ial P la n a r Silicon T ra n sisto r I High-Speed Switching Applications Features • Adoption of FBET, MBIT processes •Large c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage