2SK41 Search Results

2SK41

Abstract: k4114
Contextual Info: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

2SK4105

Abstract: K4105 2SK41 K-410
Contextual Info: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4148 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4148 is a switching element that is most suitable for use in φ 5.2 MAX. DC-DC converter whose DC input voltage is 24 to 48 V. 5.5 MAX.

Contextual Info: 2SK4124 Ordering number : ENA0746A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

Contextual Info: 2SK4125 Ordering number : ENA0747A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4125 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SJ120

Abstract: B20S 2SK416 J120
Contextual Info: bl E D 4^b20S ODIS^G ObS IHIT4 2 S J 1 2 C X L , 2 S J 1 2 0 S HITA C HI/ OPTOELECTRONICS) SILICON P-CHANNEL MOS FET H <pType <S>Type H IG H S P E E D P O W E R S W IT C H IN G , H IG H FREQUENCY PO W ER AM PLIFIER Complementary pair with 2SK416 • FEATU RES

2SK4103

Abstract: 2SK41 MOSFET 500V 5A
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4103 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V

toshiba k4108

Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65
Contextual Info: 2SK4108 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 14 S (標準)

toshiba k4108

Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)

K4115 toshiba

Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

2SK4103

Abstract: K4103
Contextual Info: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage

K4124

Abstract: 2SK4124 IT12247
Contextual Info: 2SK4124 Ordering number : ENA0746 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

200v 5A mosfet

Abstract: 2sk4198 2SK4198LS k4198 K419
Contextual Info: 2SK4198LS Ordering number : ENA1171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

A1009

Abstract: a1009,1 A10093 2SK4183 RL307
Contextual Info: 2SK4183 Ordering number : ENA1009 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4183 General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SK4197FS

Abstract: A1368 2sk4197 2SK41
Contextual Info: 2SK4197FS Ordering number : ENA1368A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4197FS General-Purpose Switching Device Applications Features • • • High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Package Marking .8A

Abstract: A1223 2SK4197LS 2sk4197
Contextual Info: 2SK4197LS Ordering number : ENA1223 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4197LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

Contextual Info: Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET http://onsemi.com 600V, 3.5A, 3.25Ω, TO-220F-3FS Features • • • ON-reistance RDS on =2.5Ω(typ.) Input capacitance Ciss=260pF(typ.) 10V drive TO-220F-3FS Specifications Absolute Maximum Ratings at Ta=25°C

2U 73 diode

Contextual Info: 73 HITACHI/-COPTOELECTRONICS} 449b2Ub H i I A U H 1 / COP f U h L E C T K U N 1 U S 2SK412 D e J M 4 cib5üS □ □ 1 0 0 5 1 7 73C 10059 ' D T - 3 ? “/3 - SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER • FEATURES

K4124

Contextual Info: 2SK4124 Ordering number : ENA0746C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process

Contextual Info: 2SK4116LS Ordering number : ENA0790A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SK4123LS

Abstract: K4123
Contextual Info: 2SK4123LS Ordering number : ENA0826 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4123LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SK4120LS

Contextual Info: 2SK4120LS Ordering number : ENA0823 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4120LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SK415

Contextual Info: 2SK415 SILICON N-CHANNEL MOS FET y U = 3 > N » r * JUMOS FET HIGH SPEED POWER SWITCHING IB 1. *f 2. \ : G a te K ^ A > ' D ra in 7 7 V ÿ (F la n g e ) 3. */ —• X .* S o u rc e ( D im e n s io n s in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Voltaire

Abstract: 2SJ118 terre 2SJ11 2SJ119 2SK413 2SK414
Contextual Info: 2 S J 1 1 8 ,2 S J 1 1 9 SILICON P C H A N N E L M O S F E T 2SK413. 2 S K 4 U t 3 s'? • > > 9 ') * 7 • *5 ft • t vffifòOi&l*. ig u A SO ) # £ * ' • ±aiü]— !— U sa i , » D r i- •x - f v f D C - D C 3 V / < - ? , i - ? 3 y h D fT 0 -3 P |