2SK292 Search Results

MMA6

Contextual Info: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X . APPLICATIONS

8a smd

Abstract: 2SK2926S
Contextual Info: IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2926S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS =0.042 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1

2SK2928

Abstract: 15A60 Hitachi DSA00108
Contextual Info: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551B Z 3rd. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange

Hitachi DSA002749

Contextual Info: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline

Hitachi DSA002780

Contextual Info: 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2929 Absolute Maximum Ratings Ta = 25°C

2SK2920

Contextual Info: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive

Hitachi DSA002758

Abstract: 2SK2928
Contextual Info: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2928 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002758

Contextual Info: 2SK2925 L , 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

Hitachi DSA002780

Contextual Info: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2928 Absolute Maximum Ratings Ta = 25°C

K2920

Abstract: 2SK2920
Contextual Info: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.5 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.56 Ω (typ.)

k2920

Contextual Info: 2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance

Contextual Info: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-550 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.055 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1 190

Contextual Info: 2SK2925 L , 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-549 Target Specification 1st. Edition Features • L ow on-resistance R ds = 0 .0 6 0 £2 typ. • H igh speed sw itch in g • 4 V gate drive d e v ic e can be driven from 5V source

RENESAS 2SK2927-E TO-220AB

Abstract: 2SK2927 2SK2927-E PRSS0004AC-A
Contextual Info: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching REJ03G1041-0600 Previous: ADE-208-550D Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

k2920

Abstract: 2SK2920
Contextual Info: 2SK2920 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2920 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω (標準) z オン抵抗が低い。

K2920

Abstract: 2SK2920
Contextual Info: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance

mosfet vgs 5v 5a

Abstract: 2SK2925S 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2925S Features Low on-resistance TO-252 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 High speed switching +0.15 1.50-0.15 RDS =0.060 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

Contextual Info: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier HITACHI ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31 dBm, r|D = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting

Hitachi DSA002758

Contextual Info: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA00276

Contextual Info: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 (Z) 1st. Edition Jul. 1997 Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 4 4 D 1 2 3 G S

Contextual Info: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features L ow on-resistance R ds(o„, = 0-042 i i typ. 4V gate drive devices. High speed switching Outline DPAK-2 1. 2. 3. 4. 1182 Gate Drain Source Drain ADE-208-535 1st. Edition

Contextual Info: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : Rjjs (ON) = 0.56 fl (Typ.)

K2920

Abstract: K292 2SK2920
Contextual Info: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance

2SK2928

Abstract: 2SK2928-E PRSS0004AC-A
Contextual Info: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 Previous: ADE-208-551B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A