2SK233 Search Results

LTA 703 S

Abstract: amplifier shf
Contextual Info: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Hitachi DSA001652

Contextual Info: 2SK2330 L , 2SK2330(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator, DC-DC converter Outline 4 HDPAK 4

Contextual Info: ADE-208-385 Z 2SK2334 (L), 2SK2334 (S Silicon N Channel MOS FET HITACHI Preliminary 1st. Edition August 1995 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator

2SK2333

Abstract: 2SK2333 equivalent F6F70HVX2 6A 700V mosfet
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2334

Contextual Info: 2SK2334 L , 2SK2334(S) Silicon N-Channel MOS FET HITACHI ADE-208-385 1st. Edition Application H igh speed pow er sw itching Features • • • • • • Low on-resistance H igh speed sw itching Low drive current 4 V gate drive d evice can be driven from 5 V source

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator

2SK2334

Contextual Info: 2SK2334 L , 2SK2334 S Silicon N Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

2SK2334

Abstract: Hitachi DSA001652
Contextual Info: 2SK2334 L , 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm 6.0±0.2 1.0±0.1 1.5±0.1 3.4±0.3 1.4±0.1 0.95±0.15 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit

2SK2333

Abstract: F6F70HVX2 DIODE 240v 3a 6A 700V mosfet
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2331

Contextual Info: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 U nit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lld B (f=12GHz)

2SK2339

Contextual Info: Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 3.4±0.3 6.0±0.2 1.0±0.1 1.5±0.1 10.0±0.3 • Avalanche energy capability guaranteed

2SK2333

Abstract: F6F70HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

22m1

Abstract: 2SK2331
Contextual Info: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SK2330 L , 2SK2330(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline 2SK2330ÇL), 2SK2330(S)

Contextual Info: TO SHIBA 2SK2332 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K2 3 3 2 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.65dB f=12GHz High Gain : Ga = lldB (f=12GHz) M A X IM U M RATINGS (Ta = 25°C)

2SK2339 equivalent

Abstract: 2SK2339
Contextual Info: 2SK2339 Power F-MOS FETs 2SK2339 Silicon N-Channel Power F-MOS • Features ● Avalanche ● Low energy capability guaranteed 3.4±0.3 8.5±0.2 ON-resistance 6.0±0.5 1.0±0.1 ● Low-voltage drive 1.5±0.1 secondary breakdown 10.0±0.3 ● No Unit : mm ■ Applications

Contextual Info: 2SK2331 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE i < ; \c i * MT • m. MT 31 M T ■ SHF BAND LOW NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : N F = 0.45dB f=12G H z • High Gain U nit in mm : G a = ll d B (f=12G H z)

2SK1168

Abstract: 2SK2334 apw5
Contextual Info: 2SK2330 L , 2SK2330 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 1 1 3

2SK1168

Abstract: 2SK23
Contextual Info: 2SK2330 L , 2SK2330 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 1 1 3

Contextual Info: 2SK2332 GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR Unit in mm SHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure : NF = 0.65dB f=12GHz High Gain : Ga= lldB (f= 12GHz) M A X IM U M RATIN G S (Ta = 25°C)

Contextual Info: 2SK2334 L , 2SK2334(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

Contextual Info: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.45dB f=12GHz High Gain : Ga = lldB (f=12GHz) M A X IM U M RATINGS (Ta = 25°C)