2SK2095 Search Results

Contextual Info: Transistors Switching 60V, 10A 2SK2095N • F e a tu re s • E x te rn a l dim en sio n s (U n its: mm) 1 ) Low o n -resistan ce. 2 ) H igh-speed sw itch in g . 3 ) W ide SO A (safe operating are a ). 4 ) E a sily d esigned drive circu its. 5) Low VGS(th).

K2095N

Contextual Info: Transistors Switching 60V, 10A 2SK2095N •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) External dimensions (Units: mm) Low Vostth). 6) Easy to use in parallel. •S tru ctu re

2SK2095N

Contextual Info: Transistors Switching 60V, 10A 2SK2095N • F e a tu re s E xternal dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. >3 .2 ± 0,2 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low 6) Easy to use in parallel.

2SK2095N

Contextual Info: Transistors Small switching 60V, 10A 2SK2095N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C)

Contextual Info: Transistors Switching 60V, 10A 2SK2095N •Fe atu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area) 4) Easily designed drive circuits. 5 ) Low Vgs(«i). 6) Easy to use in parallel. •Exte rn al dimensions (Units: mm)

2SK2095

Abstract: DP 6 W
Contextual Info: 2SK2095 Silicon N-channel MOSFET Features Dimensions Units : mm • • • available in TO-220FP (SC-67) package low on-resistance fast switching speed • wide safe operating area (SOA) • • • simple drive requirements low VGS(th) easy to parallel

mosfet low vgs

Abstract: parallel mosfet mosfet n mosfet low vgs 2SK2095N parallel MOSFET Transistors
Contextual Info: Transistors Small switching 60V, 10A 2SK2095N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C)

2SK2095

Contextual Info: h -7 > v 7.$ / T ransistors 2SK2095 2SK2095 y 'j3 > N h 7 > v ^ $ Silicon N-channel MOSFET 7 .< v > *7 /Switching * £tff$rt'&l§]/Dimensions U n it: mm 1) 1& * > & i K o 2) a i i X Y 3) K i ' K„ , j.0 .3 ’1 r Ac SO 4) IE W @ !8A ''M im o 5) VG S fth) * m

Contextual Info: 2SK2095 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60.0 V(BR)GSS (V)20.0 I(D) Max. (A)10.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30.0 Minimum Operating Temp (øC)-55

2SK2261

Abstract: 2SK2104 2SK1973 2SK1974 2SK1976 2SK2094 2SK2095 2SK2176 2SK2262 2SK1975
Contextual Info: POWER MOSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference N te o [v] 2 5 10 450 500 2SK1976 T0-220FP

2SK2095

Contextual Info: o o o a a io lumm S o e c iîic a tio n Tent a t i v e 1 2. . P ro c u c is h r h m Page ^ c* ’ »oe _ •_ 2oii2 C93 T Y P E . 2 S K 2 0 9 5 DESCRIPTION. Silicon 3 . APPLICATION. N — Channel MOS F ET. Switching. MAXIMUM RATINGS T a = 2 5TC

2SK2261

Abstract: 2SK1973 2SK1974 2SK1975 2SK1976 2SK2094 2SK2095 2SK2104 2SK2176 2SK2262
Contextual Info: POWER MÜSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference 'N / ceo [V] 60 450 500 2SK2176 T0-220FP

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

2SK1976

Abstract: POWER MOSFET
Contextual Info: Power MOSFET transistors Power MOSFET transistors Features • available in TO-220FP package • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on the PCB • all MOSFETs are manufactured using a similar new process. As a result, the input

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts

2N4403 626

Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

2SK2540

Abstract: 2SK2294
Contextual Info: Transistors/Leaded Type Characteristics MOS FET 1. Can be used with automatic placement machines. Available in various packages with taping for automatic placement. 2. MOS FETs operating from 4 volts These MOS FETs can be driven directly by an IC, significantly reducing the number of components buffer transistors .

2SK2296

Abstract: 2sk2450 K2460 2SK2295 22BW
Contextual Info: POWER M ÜSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2295

Abstract: 2SK2294 2SK2460 2SK2176 2SK2430 2SK2429 2SK2293 2sk2298 2SK2104 transistor 2sk
Contextual Info: POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors