2SJ62 Search Results

2SJ620

Contextual Info: 2SJ620 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2−π−MOSV 2SJ620 ○ スイッチングレギュレータ､DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 15 S (標準)

2SJ628

Contextual Info: 2SJ628 Ordering number : EN7271A P-Channel Silicon MOSFET 2SJ628 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

2SJ620

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) •

2SJ626

Abstract: 5M15A nec 556
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

D1563

Abstract: xg transistor
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm +0.1 0.65–0.15 0.16+0.1 –0.06 • Can be driven by a 1.8 V power source • Low on-state resistance

marking XN

Abstract: nec 556
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)

IT10074

Abstract: 2SJ629
Contextual Info: 2SJ629 注文コード No. N 9 0 8 4 A 三洋半導体データシート 半導体ニューズ No.N9084 をさしかえてください。 2SJ629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。

2SJ620

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)

82605

Abstract: 2SJ629
Contextual Info: 2SJ629 Ordering number : EN9084A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C

D1563

Abstract: 2SJ621
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ621 P チャネル パワーMOS FET スイッチング用 外形図（単位: mm） 2SJ621 は，1.8 V 電源系による直接駆動が可能なスイッチング素子

d1589

Abstract: 2SJ624 A65108
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ624 P チャネル MOS FET スイッチング用 外形図（単位：mm） 2SJ624 は，1.8 V 電源系による直接駆動が可能なス イッチング素子です。

2SJ625

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 3 0 to 0.1 1 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)

2SJ628

Contextual Info: 2SJ628 注文コード No. N 7 2 7 1 A 三洋半導体データシート 半導体データシート No.N7271 をさしかえてください。 2SJ628 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

J620 control system

Abstract: 2SJ620
Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)

S5030

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) •

nec k 813

Abstract: D1589 marking XH
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ624 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)

Contextual Info: 2SJ629 Ordering number : EN9084 P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

2SJ628

Contextual Info: Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2062A [2SJ628] 4.5 1.6 0.4 1.0 2.5

2SJ620

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)

2SJ620

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)

D1589

Abstract: nec k 813 2SJ624 marking xh
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ624 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm +0.1 0.65–0.15 0.16 +0.1 –0.06 3 1.5 FEATURES 0.4 +0.1 –0.05 2.8 ±0.2 The 2SJ624 is a switching device which can be driven directly

D1563

Abstract: 2SJ621 marking ls nec marking xg
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent

2SJ620

Contextual Info: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)