Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SJ506S Search Results

    2SJ506S Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ506(S)
    		Hitachi Semiconductor Power switching MOSFET Original PDF 53.58KB 10
    2SJ506S
    		Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF 53.58KB 10
    2SJ506S
    		Kexin P-Channel MOSFET Original PDF 49.36KB 2
    2SJ506(S)
    		Renesas Technology Silicon P Channel MOS FET Original PDF 84.41KB 8
    2SJ506S
    		Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF 62.32KB 12
    2SJ506S
    		Renesas Technology Silicon P Channel MOS FET Original PDF 84.4KB 8
    2SJ506S
    		Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF 86.17KB 14

    2SJ506S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    current source 5A ac

    Abstract: 2SJ506S TF65 65M1-10
    Contextual Info: IC MOSFET SMD Type Hight Speed Power Switching 2SJ506S TO-252 Unit: mm Features Low on-resistance +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 4V gate drive devices. 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15


    Original     		2SJ506S O-252 current source 5A ac 2SJ506S TF65 65M1-10 PDF

    2SJ506L-E

    Abstract: 2SJ506 PRSS0004ZD-B PRSS0004ZD-C
    Contextual Info: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.065 Ω typ. (at VGS = –10 V, ID = –5 A) • Low drive current


    Original     		2SJ506 REJ03G0873-0500 ADE-208-548C) PRSS0004ZD-B PRSS0004ZD-C 2SJ506L-E PRSS0004ZD-B PRSS0004ZD-C PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    2SJ506

    Abstract: 2SJ506L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ506LE
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF