2SJ387S Search Results

2SJ387S Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ387(S)		Hitachi Semiconductor	Power switching MOSFET	Original	PDF	49.79KB	10
2SJ387S		Hitachi Semiconductor	Silicon P-Channel MOS FET	Original	PDF	49.8KB	10
2SJ387S		Hitachi Semiconductor	Mosfet Guide	Original	PDF	6.15MB	1147
2SJ387S		Kexin	P-Channel MOSFET	Original	PDF	45.66KB	2
2SJ387(S)		Renesas Technology	Silicon P Channel MOS FET	Original	PDF	83.59KB	8
2SJ387S		Renesas Technology	FET Transistor, Silicon P-Channel MOS FET	Original	PDF	85.05KB	14
2SJ387S		Renesas Technology	Silicon P Channel MOS FET	Original	PDF	83.58KB	8
2SJ387S		Renesas Technology	Silicon P-Channel MOS FET	Original	PDF	59.79KB	9
2SJ387S		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	111.2KB	1

2SJ387S Price and Stock

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Rochester Electronics LLC 2SJ387STL-E P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ387STL-E	Bulk			121	1 - 10 - 100 - 1000 $2.49 10000 $2.49	Buy Now
Renesas Electronics Corporation 2SJ387STL-E 2SJ387STL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SJ387STL-E		8,800		133	1 - 10 - 100 - 1000 $2.54 10000 $2.39	Buy Now
	2SJ387STL-E		5,697		133	1 - 10 - 100 - 1000 $2.54 10000 $2.39	Buy Now
Rochester Electronics	2SJ387STL-E		14,497		1	1 - 10 - 100 $2.27 1000 $2.03 10000 $1.91	Buy Now

2SJ387S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ387S Abstract: TR325 Contextual Info: IC MOSFET SMD Type SMDType Silicon P-Channel MOSFET 2SJ387S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3.80 +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28	Original	2SJ387S O-252 2SJ387S TR325	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SJ387 Abstract: 2SJ387L-E 2SJ387STL-E PRSS0004ZD-B PRSS0004ZD-C Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
2SJ387STL-E Abstract: REJ03G0862-0200 2SJ387 2SJ387L-E PRSS0004ZD-B PRSS0004ZD-C *0862 dpak Contextual Info: 2SJ387 L , 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source	Original	2SJ387 REJ03G0862-0200 ADE-208-1196) PRSS0004ZD-B PRSS0004ZD-C 2SJ387STL-E REJ03G0862-0200 2SJ387L-E PRSS0004ZD-B PRSS0004ZD-C *0862 dpak	PDF