2SD882H Search Results
2SD882H Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage |
Original |
2SD882H O-126 | |
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Contextual Info: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage |
Original |
2SD882H O-126 | |
|
Contextual Info: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage |
Original |
2SD882H O-126 | |
|
Contextual Info: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol Value Unit Collector to Base Voltage |
Original |
2SD882H O-126 |