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    2SD613 D Search Results

    2SD613 D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DAO3W3P543M40LF
    		Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3W3 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. PDF
    DAL3V3P543G30LF
    		Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3V3 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 1.6mm PCB Thickness. PDF
    DAV3V3P543H40LF
    		Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3V3 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. PDF
    DCV8W8P500G40LF
    		Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 1.6mm PCB Thickness. PDF
    DCV8W8P500M40LF
    		Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Female Screw Lock UNC 4.40, Back: Metal Brackets. PDF

    2SD613 D Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD613D
    		Unknown Scan PDF 121.54KB 3

    2SD613 D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB633

    Abstract: 513H 2SD613
    Contextual Info: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


    Original     		2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 2SB633 513H 2SD613 PDF

    transistor 2sB633

    Abstract: 2sd613 2SB633 513H 2sb633 sanyo
    Contextual Info: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


    Original     		2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 transistor 2sB633 2sd613 2SB633 513H 2sb633 sanyo PDF

    2SB633

    Abstract: 2SD613 2SD613 D
    Contextual Info: JMnic 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		2SB633 O-220C 2SD613 5-35W 2SB633 2SD613 2SD613 D PDF

    2SD613 equivalent

    Abstract: 2SD613 2SB633
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB633 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Complement to Type 2SD613 APPLICATIONS ·Audio frequency 25~35 watts output applications. n c


    Original     		2SB633 2SD613 2SD613 equivalent 2SD613 2SB633 PDF

    2SB633

    Abstract: 2SD613
    Contextual Info: Inchange Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity


    Original     		2SB633 O-220C 2SD613 5-35W 2SB633 2SD613 PDF

    2SD613

    Abstract: Shing 2SB633 2sb633 transistor
    Contextual Info: 2SB633 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD613 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		2SB633 O-220 2SD613 -100V 2SD613 Shing 2SB633 2sb633 transistor PDF

    2SB633

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613
    Contextual Info: SavantIC Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD613 ·High breakdown voltage :VCEO=-85V ·High current :IC=-6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		2SB633 O-220C 2SD613 5-35W 2SB633 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613 PDF

    2SB633

    Abstract: 2SD613
    Contextual Info: 2SD613 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB633 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		2SD613 O-220 2SB633 2SB633 2SD613 PDF

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633
    Contextual Info: Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633 PDF

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D
    Contextual Info: SavantIC Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D PDF

    2SD613

    Abstract: ica 700 2SB633
    Contextual Info: ÆàMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for the output stage of 25W to 35W AF power amplifier 2SD613 FEATURES: * Low Coiiector-Emitter Saturation Voltage VCE sa tf 2.0V(Max @ Ic=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SB633


    OCR Scan     		2SB633 2SD613 2SD613 ica 700 2SB633 PDF

    2SB633

    Abstract: 2SD613 transistor 2sB633
    Contextual Info: ¿2&M0 SPEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 25W to 3 5 W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage VCE sat = 2.0V(Max) @ I c=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD613


    OCR Scan     		to35W 2SD613 2SB633 2SB633 2SD613 transistor 2sB633 PDF

    d613

    Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
    Contextual Info: O rd e rin g n u m b e r: EN513H 2SB633/2SD613 No.513H PNP/NPN Epitaxial Planar Silicon Transistors SAftfYO i 85V/6A, AF 25 to 35W Output Applications F eatu re s • High breakdown voltage V ceo^SV, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute M axim um R atings at Ta = 25C,C


    OCR Scan     		EN513H 2SB633/2SD613 2SB633 40VfIE d613 D613 voltage 2SD613 2SB633 513H 2sb633 sanyo PDF

    ir 513h

    Abstract: PF 513h D613 D613 voltage 2SD613 EN513H 2SB633 2SB833 ir 513h ic 513H
    Contextual Info: O rd e rin g n u m b e r : E N 513H 2SB633/2SD613 i PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 85V/6A, AF 25 to 35W Output Applications Features •High breakdown voltage Vceo85V, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute Maximum R atings at T a=25°C


    OCR Scan     		EN513H 2SB633/2SD613 Vceo85V, 2SB633 2SB633/2SD613 633/2SD613 833/2S ir 513h PF 513h D613 D613 voltage 2SD613 2SB833 ir 513h ic 513H PDF

    2SD636 R

    Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
    Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b


    OCR Scan     		2SD526 2SD545 2SD552 2SD553 2SD560 2SD568 2SD569 2SD571 2SB639H 2SD629H 2SD636 R 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601 PDF

    nec 2Sb617

    Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85


    Original     		IDA1263 IDC3180 2SA1263 2SC3180 BDT41B BDT42B BD244B SSP82B nec 2Sb617 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617 PDF

    2SD1046

    Abstract: 2SB514
    Contextual Info: SAfiYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.


    OCR Scan     		2SC2078 O-220 27MHz T0-220 MT930303TR 2SD1046 2SB514 PDF

    2SD313

    Abstract: transistor 2sC3781 2SD1159 2sa128
    Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used


    OCR Scan     		T0-220ML T0-220 2SA1469 2SC3746 2SA1470 2SC3747 2SA1471 2SC3748 2SB1134 2SD1667 2SD313 transistor 2sC3781 2SD1159 2sa128 PDF

    2SB511

    Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
    Contextual Info: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.


    OCR Scan     		2SC2078 O-220 27MHz tag75 2SD895 2SB776 2SD896 2SB816 2SD1046 2SB817 2SB511 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579 PDF

    SB145

    Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
    Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used


    OCR Scan     		T0-220ML T0-220 2SA1469 2SC3746 2SA1470 2SC3747 2SA1471 2SC3748 2SB1134 2SD1667 SB145 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313 PDF

    2sc2460b

    Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
    Contextual Info: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA


    OCR Scan     		2SC3040 2SD641 2SC2819 2SC3042 2SC2751 2SC2740 2SC3331 2SC1815 2SC945 2SC3311A 2sc2460b 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 PDF

    SD 1083

    Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
    Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «


    OCR Scan     		2SD1055 2SD1246 2SD613 2SD525 2SC2562 2SD843 2SD1137 2SD1134 2SD743 2SD568 SD 1083 SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134 PDF

    NEC 824A

    Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
    Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330


    OCR Scan     		2SD792 2SD793 2SD794 2SD795 2SD795A 2SD796 2SD798 2SD799 2SD800 2SD801 NEC 824A NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A PDF

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


    Original     		000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586 PDF