2SB633
Abstract: 513H 2SD613
Contextual Info: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB
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2SB633/2SD613
VCEO85V,
2010C
2SB633/2SD613]
O-220AB
SC-46
2SB633
2SB633
513H
2SD613
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transistor 2sB633
Abstract: 2sd613 2SB633 513H 2sb633 sanyo
Contextual Info: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB
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2SB633/2SD613
VCEO85V,
2010C
2SB633/2SD613]
O-220AB
SC-46
2SB633
transistor 2sB633
2sd613
2SB633
513H
2sb633 sanyo
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2SB633
Abstract: 2SD613 2SD613 D
Contextual Info: JMnic 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity audio frequency amplifier output stage
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2SB633
O-220C
2SD613
5-35W
2SB633
2SD613
2SD613 D
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2SD613 equivalent
Abstract: 2SD613 2SB633
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB633 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Complement to Type 2SD613 APPLICATIONS ·Audio frequency 25~35 watts output applications. n c
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2SB633
2SD613
2SD613 equivalent
2SD613
2SB633
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2SB633
Abstract: 2SD613
Contextual Info: Inchange Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity
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2SB633
O-220C
2SD613
5-35W
2SB633
2SD613
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2SD613
Abstract: Shing 2SB633 2sb633 transistor
Contextual Info: 2SB633 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD613 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2SB633
O-220
2SD613
-100V
2SD613
Shing
2SB633
2sb633 transistor
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2SB633
Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613
Contextual Info: SavantIC Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD613 ·High breakdown voltage :VCEO=-85V ·High current :IC=-6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage
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2SB633
O-220C
2SD613
5-35W
2SB633
HIGH VOLTAGE high current POWER PNP TRANSISTORS
2SD613
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2SB633
Abstract: 2SD613
Contextual Info: 2SD613 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB633 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2SD613
O-220
2SB633
2SB633
2SD613
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2SD613
Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633
Contextual Info: Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage
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2SD613
O-220C
2SB633
5-35W
2SD613
2SD613 equivalent
2SD613 datasheet
2SB633
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PDF
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2SD613
Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D
Contextual Info: SavantIC Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage
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Original
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2SD613
O-220C
2SB633
5-35W
2SD613
2SD613 equivalent
2SD613 datasheet
2SB633
2SD613 D
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PDF
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2SD613
Abstract: ica 700 2SB633
Contextual Info: ÆàMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for the output stage of 25W to 35W AF power amplifier 2SD613 FEATURES: * Low Coiiector-Emitter Saturation Voltage VCE sa tf 2.0V(Max @ Ic=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SB633
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2SB633
2SD613
2SD613
ica 700
2SB633
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2SB633
Abstract: 2SD613 transistor 2sB633
Contextual Info: ¿2&M0 SPEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 25W to 3 5 W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage VCE sat = 2.0V(Max) @ I c=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD613
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to35W
2SD613
2SB633
2SB633
2SD613
transistor 2sB633
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d613
Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
Contextual Info: O rd e rin g n u m b e r: EN513H 2SB633/2SD613 No.513H PNP/NPN Epitaxial Planar Silicon Transistors SAftfYO i 85V/6A, AF 25 to 35W Output Applications F eatu re s • High breakdown voltage V ceo^SV, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute M axim um R atings at Ta = 25C,C
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EN513H
2SB633/2SD613
2SB633
40VfIE
d613
D613 voltage
2SD613
2SB633
513H
2sb633 sanyo
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PDF
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ir 513h
Abstract: PF 513h D613 D613 voltage 2SD613 EN513H 2SB633 2SB833 ir 513h ic 513H
Contextual Info: O rd e rin g n u m b e r : E N 513H 2SB633/2SD613 i PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 85V/6A, AF 25 to 35W Output Applications Features •High breakdown voltage Vceo85V, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute Maximum R atings at T a=25°C
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EN513H
2SB633/2SD613
Vceo85V,
2SB633
2SB633/2SD613
633/2SD613
833/2S
ir 513h
PF 513h
D613
D613 voltage
2SD613
2SB833
ir 513h ic
513H
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2SD636 R
Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b
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2SD526
2SD545
2SD552
2SD553
2SD560
2SD568
2SD569
2SD571
2SB639H
2SD629H
2SD636 R
2SD636
2SB615
2SD650H
2SB613
2SD511
2SD646
2SD637
2SB631
2SD601
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nec 2Sb617
Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85
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IDA1263
IDC3180
2SA1263
2SC3180
BDT41B
BDT42B
BD244B
SSP82B
nec 2Sb617
2SA1102 SANKEN
2SD371-0
sanken 2sa1102
LT019
181T2B
Gentron
2SA808A
LT019S
2SB617
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PDF
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2SD1046
Abstract: 2SB514
Contextual Info: SAfiYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2SC2078
O-220
27MHz
T0-220
MT930303TR
2SD1046
2SB514
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2SD313
Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used
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T0-220ML
T0-220
2SA1469
2SC3746
2SA1470
2SC3747
2SA1471
2SC3748
2SB1134
2SD1667
2SD313
transistor 2sC3781
2SD1159
2sa128
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2SB511
Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
Contextual Info: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2SC2078
O-220
27MHz
tag75
2SD895
2SB776
2SD896
2SB816
2SD1046
2SB817
2SB511
2SC4030
2SA1011
2SC2344
2SC4031
2SC4493
2SC4572
2SC4578
2SC4579
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SB145
Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used
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T0-220ML
T0-220
2SA1469
2SC3746
2SA1470
2SC3747
2SA1471
2SC3748
2SB1134
2SD1667
SB145
2sd1159
hc/2SB824 transistor
2sb507 sanyo
2Sd1666
2sa128
2SB824 transistor
2sd313
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2sc2460b
Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
Contextual Info: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA
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2SC3040
2SD641
2SC2819
2SC3042
2SC2751
2SC2740
2SC3331
2SC1815
2SC945
2SC3311A
2sc2460b
2SC1957
2SC2320
25C945
2SC945
25c1815
2SC2313
2SC2560
2SC2499
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PDF
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SD 1083
Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «
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2SD1055
2SD1246
2SD613
2SD525
2SC2562
2SD843
2SD1137
2SD1134
2SD743
2SD568
SD 1083
SD1087
2SD1084
2sd1033
2SD1238
2sd1245
2SD987
2SD772B
2SD1706
2SD1134
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PDF
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NEC 824A
Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330
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2SD792
2SD793
2SD794
2SD795
2SD795A
2SD796
2SD798
2SD799
2SD800
2SD801
NEC 824A
NEC D 809
2SD811 TOSHIBA
NEC D 809 k
nec k 813
25c3325
2sc2233
2SB837
2sc1741
2SD683A
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2SD588
Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*
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000-5A
2SD560
2SD571
15kHz
2SD586
2SD718
2SD726
2SD727
2SD728
2SD731
2SD588
2SB651
2SB669A
2SB618A
2SB641
2SB615
2Sb669
2SD588A
2SB618
2SB616 2SD586
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