2SD2137 Search Results
2SD2137 Functional Equivalents (5)
The Functional Equivalents tab will give you options that are likely to match the same function of 2SD2137, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| 2SD2135 | Panasonic Electronic Components | Check for Price | Power Bipolar Transistor, 1A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| 2SD2133 | Panasonic Electronic Components | Check for Price | Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| 2SD1255Q | Panasonic Electronic Components | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| 2SD2421T114 | ROHM Semiconductor | Check for Price | Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| 2SD1255R | Panasonic Electronic Components | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
2SD2137 Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SD2137 |
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NPN Transistor | Original | 70.48KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 |
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Silicon NPN triple diffusion planar type | Original | 53.7KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 |
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Silicon NPN triple diffusion planar type | Original | 72.28KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 | Transys Electronics | Plastic-Encapsulated Transistors | Original | 54.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 | Various Russian Datasheets | Transistor | Original | 84.39KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 | Unknown | Japanese Transistor Cross References (2S) | Scan | 36.35KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 98.02KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 45.47KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137A |
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NPN Transistor | Original | 70.48KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137A |
|
Silicon NPN triple diffusion planar type | Original | 53.7KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137A |
|
Silicon NPN triple diffusion planar type | Original | 72.28KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137A | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 98.01KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137A | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 42.44KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137A |
|
Silicon NPN Triple Diffused Planar Power Transistors | Scan | 188.41KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137AO |
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Silicon NPN Triple Diffusion Planar Type Power Transistor | Original | 90.29KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137AP |
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Silicon NPN Triple Diffusion Planar Type Power Transistor | Original | 90.29KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137APA |
|
Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF 80VCEO 3A MT-4 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137AQ |
|
Silicon NPN Triple Diffusion Planar Type Power Transistor | Original | 90.29KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2137P |
|
Silicon NPN Triple Diffused Planar Power Transistors | Scan | 188.41KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2137 Price and Stock
Panasonic Electronic Components 2SD2137APATRANS NPN 80V 3A MT-4-A1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SD2137APA | Ammo Pack | 1,000 |
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Buy Now | ||||||
2SD2137 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A |
Original |
2SD2137, 2SD2137A 2SD2137 | |
2SD2137A
Abstract: 2SB1417 2SB1417A 2SD2137
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2SD2137, 2SD2137A 2SB1417 2SB1417A 2SD2137 2SD2137A 2SB1417A 2SD2137 | |
2sd2137Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current |
Original |
2SD2137, 2SD2137A 2SD2137 2sd2137 | |
2SD2137Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 |
Original |
O-220 2SD2137 O-220 375mA 10MHz 2SD2137 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat) |
Original |
O-220 2SD2137 O-220 10MHz 375mA | |
2SD2137Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range |
Original |
O-220 2SD2137 O-220 375mA 10MHz 2SD2137 | |
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Contextual Info: 2SD2137Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)3 |
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2SD2137Q Freq30MÃ | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping |
Original |
O-220 2SD2137A 10MHz | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR(NPN) TO—220F FEATURES Power dissipation PCM : 2 W(Tamb=25℃) Collector current ICM : 3 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range |
Original |
O-220F 2SD2137 10MHz 375mA | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) |
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2002/95/EC) 2SD2137A 2SB1417A | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) |
Original |
2002/95/EC) 2SD2137A 2SB1417A | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) |
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2002/95/EC) 2SB1417A 2SD2137A | |
2SB1417A
Abstract: 2SD2137A
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Original |
2SD2137A 2SB1417A 2SB1417A 2SD2137A | |
2SB1417A
Abstract: 2SD2137A
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Original |
2002/95/EC) 2SD2137A 2SB1417A 2SD2137A | |
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2SD2137
Abstract: 2SB1417 2SB1417A 2SD2137A
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Original |
2SD2137, 2SD2137A 2SD2137 2SD2137 2SB1417 2SB1417A 2SD2137A | |
2SB1417A
Abstract: 2SD2137A
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Original |
2002/95/EC) 2SD2137A 2SB1417A 2SD2137A | |
2SB1417A
Abstract: 2SD2137A
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Original |
2002/95/EC) 2SB1417A 2SD2137A 2SB1417A 2SD2137A | |
2SD2137Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220F 1. BASE FEATURES z High forward current transfer ratio hFE which satisfactory linearity z Low collector to emitter saturation voltage VCE(sat) |
Original |
O-220F 2SD2137 O-220F 10MHz 375mA 2SD2137 | |
2SD2137
Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
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OCR Scan |
2SD2137, 2SD2137A 2SB1417, 2SB1417A 2SD2137 2SD2137 pc 817 2SB1417 2SB1417A 2SD2137A | |
2SD2137
Abstract: 2SD2137A 2SB1417 2SB1417A S21N
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OCR Scan |
2SD2137, 2SD2137A 2SB1417, 2SB1417A 2SD2137 2SD2137 2SD2137A 2SB1417 2SB1417A S21N | |
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Contextual Info: 2SD2137 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High forward current transfer ratio hFE which satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping |
Original |
2SD2137 O-220F O-220F 375mA 10MHz | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO |
Original |
2002/95/EC) 2SD2137A | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO |
Original |
2002/95/EC) 2SB1417A 2SD2137A | |
2SD2137
Abstract: 2SB1417 2SB1417A 2SD2137A
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Original |
2SD2137, 2SD2137A 2SD2137 2SD2137 2SB1417 2SB1417A 2SD2137A | |